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Structure and properties of dislocations in semiconductors 1989 : proceedings of the Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors held at the University of Oxford, 5-8 April 1989

Title: Structure and properties of dislocations in semiconductors 1989 : proceedings of the Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors held at the University of Oxford, 5-8 April 1989 / edited by S.G. Roberts, D.B. Holt, and P.R. Wilshaw.
Author: International Symposium on the Structure and Properties of Dislocations in Semiconductors (6th : 1989 : Oxford University)
Publication: Bristol ; New York : Institute of Physics, c1989.

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Description

xii, 470 p. : ill.; 25 cm.

Series Statement

Institute of Physics conference series ; no. 104

Subjects

Bibliography (note)

Includes bibliographical references.

Call Number

JSE 90-415

ISBN

0854980601

LCCN

89024491

OCLC

20421130
20421130

Conference

International Symposium on the Structure and Properties of Dislocations in Semiconductors (6th : 1989 : Oxford University)

Title

Structure and properties of dislocations in semiconductors 1989 : proceedings of the Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors held at the University of Oxford, 5-8 April 1989 / edited by S.G. Roberts, D.B. Holt, and P.R. Wilshaw.

Imprint

Bristol ; New York : Institute of Physics, c1989.

Series

Institute of Physics conference series ; no. 104

Bibliography

Includes bibliographical references.

Added Author

Roberts, S. G.

Holt, D. B.

Wilshaw, P. R.

Research Call Number

JSE 90-415

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