Research Catalog

Physicochemical principles of semiconductor doping

Title
Physicochemical principles of semiconductor doping [by] V. M. Glazov and V. S. Zemskov. Translated from the Russian by Ch. Nisenbaum and B. Benny.
Author
Glazov, V. M. (Vasiliĭ Mikhaĭlovich)
Publication
Jerusalem, Israel Program for Scientific Translations, 1968.

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Details

Additional Authors
Zemskov, V. S. (Viktor Sergeevich)
Description
xii, 380 p. illus.; 25 cm.
Uniform Title
Fiziko-khimicheskie osnovy legirovani︠i︡a poluprovodnikov. English
Alternative Title
Fiziko-khimicheskie osnovy legirovani︠i︡a poluprovodnikov.
Subject
Note
  • Translation of Fiziko-Khimicheskie osnovy legirovani︠i︡a poluprovodnikov.
Bibliography (note)
  • Bibliography: p. 355-375.
Language (note)
  • Text is in English translated from Russian.
Call Number
TTE (Glazov, V. M. Physicochemical principles of semiconductor doping)
LCCN
78004023 //r852
OCLC
8988
Author
Glazov, V. M. (Vasiliĭ Mikhaĭlovich)
Title
Physicochemical principles of semiconductor doping [by] V. M. Glazov and V. S. Zemskov. Translated from the Russian by Ch. Nisenbaum and B. Benny.
Imprint
Jerusalem, Israel Program for Scientific Translations, 1968.
Bibliography
Bibliography: p. 355-375.
Added Author
Zemskov, V. S. (Viktor Sergeevich)
Research Call Number
TTE (Glazov, V. M. Physicochemical principles of semiconductor doping)
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