Research Catalog

Development of silicon carbide semiconductor devices for high temperature applications

Title
Development of silicon carbide semiconductor devices for high temperature applications [microform] / Lawrence G. Matus and J. Anthony Powell and Jeremy B. Petit.
Author
Matus, Lawrence G.
Publication
[Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : For sale by the National Technical Information Service, 1991]

Details

Additional Authors
  • Powell, J. Anthony.
  • Petit, Jeremy B.
  • United States. National Aeronautics and Space Administration.
Description
1 v.
Series Statement
NASA technical memorandum ; 104398
Subject
Note
  • Distributed to depository libraries in microfiche.
Reproduction (note)
  • Microfiche.
Call Number
READEX Microfiche NAS 1.15:104398
OCLC
marcive25121858
Author
Matus, Lawrence G.
Title
Development of silicon carbide semiconductor devices for high temperature applications [microform] / Lawrence G. Matus and J. Anthony Powell and Jeremy B. Petit.
Imprint
[Washington, DC] : National Aeronautics and Space Administration ; [Springfield, Va. : For sale by the National Technical Information Service, 1991]
Series
NASA technical memorandum ; 104398
Reproduction
Microfiche. [Washington, D.C.? : National Aeronautics and Space Administration], 1991. 1 microfiche.
Added Author
Powell, J. Anthony.
Petit, Jeremy B.
United States. National Aeronautics and Space Administration.
Gpo Item No.
830-D (MF)
Sudoc No.
NAS 1.15:104398
Research Call Number
READEX Microfiche NAS 1.15:104398
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