- Additional Authors
- National Institute of Standards and Technology (U.S.). Semiconductor Electronics Division.
- Description
- iv, 27, 201-211 p. : ill.; 28 cm.
- Series Statement
- NIST special publication ; 400-92
- Alternative Title
- Evolution of silicon materials characteristics, lessons learned for improved manufacturing.
- Subject
- Note
- Distributed to depository libraries in microfiche.
- Shipping list no.: 94-0057-P.
- Paper version no longer for sale by the Supt. of Docs.
- "July 1993."
- Bibliography (note)
- Includes bibliographical references (p. 23-25).
- Reproduction (note)
- Call Number
- READEX Microfiche C 13.10:400-92
- OCLC
- marcive30143803
- Author
Bullis, W. Murray, 1930-
- Title
Semiconductor measurement technology [microform] : evolution of silicon materials characterization : lessons learned for improved manufacturing / W. Murray Bullis ; prepared for Semiconductor Electronics Division, Electronics and Electrical Engineering Laboratory, National Institute of Standards and Technology"
- Imprint
Gaithersburg, MD : U.S. Dept. of Commerce, National Institute of Standards and Technology ; Washington, D.C. : For sale by the Supt. of Docs., U.S. G.P.O., 1993.
- Series
NIST special publication ; 400-92
- Bibliography
Includes bibliographical references (p. 23-25).
- Reproduction
Microfiche. [Washington, D.C.?] : Supt. of Docs., U.S. G.P.O., [1994] 1 microfiche : negative.
- Added Author
National Institute of Standards and Technology (U.S.). Semiconductor Electronics Division.
- Gpo Item No.
0247 (MF)
- Sudoc No.
C 13.10:400-92
- Research Call Number
READEX Microfiche C 13.10:400-92