Research Catalog

Surface passivation for III-V semiconductor processing stable gallium sulphide films by MOCVD

Title
Surface passivation for III-V semiconductor processing [microform] : stable gallium sulphide films by MOCVD / Andrew N. MacInnes ... [et al.].
Publication
[Washington, D.C.] : National Aeronautics and Space Administration ; [Springfield, Va. : National Technical Information Service, distributor, 1994]

Details

Additional Authors
  • MacInnes, Andrew N.
  • United States. National Aeronautics and Space Administration.
Description
1 v.
Series Statement
NASA technical memorandum ; 106761
Alternative Title
Surface passivation for 3-5 semiconductor processing
Subject
  • Gallium
  • Gallium arsenides
  • Metalorganic chemical vapor deposition
  • MIS (Semiconductors)
  • Passivity
  • Semiconductors (Materials)
  • Structural analysis
  • Sulfides
  • Vapor deposition
Note
  • Distributed to depository libraries in microfiche.
  • Shipping list no.: 95-0275-M.
Reproduction (note)
  • Microfiche.
Call Number
READEX Microfiche NAS 1.15:106761
OCLC
marcive32712365
Title
Surface passivation for III-V semiconductor processing [microform] : stable gallium sulphide films by MOCVD / Andrew N. MacInnes ... [et al.].
Imprint
[Washington, D.C.] : National Aeronautics and Space Administration ; [Springfield, Va. : National Technical Information Service, distributor, 1994]
Series
NASA technical memorandum ; 106761
Reproduction
Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 1994] 1 microfiche.
Added Author
MacInnes, Andrew N.
United States. National Aeronautics and Space Administration.
Gpo Item No.
0830-D (MF)
Sudoc No.
NAS 1.15:106761
Research Call Number
READEX Microfiche NAS 1.15:106761
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