Research Catalog

Title

Measurement of carrier transport and recombination parameter in heavily doped silicon [microform] : final report.

Publication

Stanford, CA : Solid State Electronics Laboratory, Stanford Electronics Laboratories, Dept. of Electrical Engineering, Stanford University ; [Washington, D.C. : National Aeronautics and Space Administration ; Springfield, Va. : National Technical Information Service, distributor, 1986-

Details

Additional Authors

• Swirhun, Stanley Edward.
• Swanson, Richard M.
• United States. National Aeronautics and Space Administration.

Description

v.

Series Statement

NASA contractor report ; NASA CR-180608

Subject

• Carrier density (Solid state)
• Carrier lifetime
• Carrier mobility
• Doped crystals
• Energy gaps (Solid state)
• Minority carriers
• Silicon compounds

Note

• Distributed to depository libraries in microfiche.

Reproduction (note)

• Microfiche.

Contents

v. 2. Minority carrier transport in heavily doped Si:B / Stanley E. Swirhun and Richard M. Swanson.

Call Number

READEX Microfiche NAS 1.26:180608

OCLC

marcive32984142

Title

Measurement of carrier transport and recombination parameter in heavily doped silicon [microform] : final report.

Imprint

Stanford, CA : Solid State Electronics Laboratory, Stanford Electronics Laboratories, Dept. of Electrical Engineering, Stanford University ; [Washington, D.C. : National Aeronautics and Space Administration ; Springfield, Va. : National Technical Information Service, distributor, 1986-

Series

NASA contractor report ; NASA CR-180608

Reproduction

Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 1987- <1> microfiche.

Added Author

Swirhun, Stanley Edward.

Swanson, Richard M.

United States. National Aeronautics and Space Administration.

Gpo Item No.

0830-H-14 (MF)

Sudoc No.

NAS 1.26:180608

Research Call Number

READEX Microfiche NAS 1.26:180608