Research Catalog

Ohmic contacts, irradiation effects, and thin film growth of GaAs and Al [subscript 1-X] Ga [subscript X] As final technical report

Title
Ohmic contacts, irradiation effects, and thin film growth of GaAs and Al [subscript 1-X] Ga [subscript X] As [microform] : final technical report / submitted by: Paul H. Holloway.
Author
Holloway, Paul H.
Publication
Gainesville, Fla. : University of Florida, Dept. of Materials Science and Engineering ; Hampton, Va. : NASA Langley Research Center, [1984]

Details

Additional Authors
  • University of Florida. Department of Materials Science and Engineering.
  • Langley Research Center.
Description
1 v.
Series Statement
NASA-CR ; 173257
Uniform Title
NASA contractor report ; NASA CR-173257.
Subject
  • Ohmic contacts
  • Thin films
  • Crystal growth
  • Electric contacts
  • Electrical properties
  • Gallium arsenides
  • Radiation effects
Reproduction (note)
  • Microfiche.
Call Number
GPO Microfiche NAS 1.26:173257
OCLC
marcive173640645
Author
Holloway, Paul H.
Title
Ohmic contacts, irradiation effects, and thin film growth of GaAs and Al [subscript 1-X] Ga [subscript X] As [microform] : final technical report / submitted by: Paul H. Holloway.
Imprint
Gainesville, Fla. : University of Florida, Dept. of Materials Science and Engineering ; Hampton, Va. : NASA Langley Research Center, [1984]
Series
NASA-CR ; 173257
NASA contractor report ; NASA CR-173257.
Reproduction
Microfiche. [Washington, D.C. : National Aeronautics and Space Administration], 1984. 1 microfiche.
Added Author
University of Florida. Department of Materials Science and Engineering.
Langley Research Center.
Gpo Item No.
0830-H-14 (MF)
Sudoc No.
NAS 1.26:173257
Research Call Number
GPO Microfiche NAS 1.26:173257
View in Legacy Catalog