Research Catalog

Crystal growth of device quality GaAs in space annual report, period April 1, 1985 to March 31, 1986

Title
Crystal growth of device quality GaAs in space [microform] : annual report, period April 1, 1985 to March 31, 1986 / to National Aeronautics and Space Administration ; submitted by Harry C. Gatos and Jacek Lagowski.
Author
Gatos, Harry C.
Publication
Washington, D.C. : National Aeronutics and Space Administration, [1986]

Details

Additional Authors
  • Lagowski, J.
  • United States. National Aeronautics and Space Administration.
Description
1 v.
Series Statement
[NASA-CR] ; 177268
Uniform Title
NASA contractor report ; NASA CR-177268.
Subject
  • Gallium arsenide semiconductors
  • Cosmochemistry
  • Electroepitaxy
  • Gallium arsenides
  • Melts (crystal growth)
  • Semiconductor devices
  • Space processing
Reproduction (note)
  • Microfiche.
Call Number
GPO Microfiche NAS 1.26:177268
OCLC
marcive224441582
Author
Gatos, Harry C.
Title
Crystal growth of device quality GaAs in space [microform] : annual report, period April 1, 1985 to March 31, 1986 / to National Aeronautics and Space Administration ; submitted by Harry C. Gatos and Jacek Lagowski.
Imprint
Washington, D.C. : National Aeronutics and Space Administration, [1986]
Series
[NASA-CR] ; 177268
NASA contractor report ; NASA CR-177268.
Reproduction
Microfiche. [Washington, D.C. : National Aeronautics and Space Administration], 1986. 1 microfiche.
Added Author
Lagowski, J.
United States. National Aeronautics and Space Administration.
Gpo Item No.
0830-H-14 (MF)
Sudoc No.
NAS 1.26:177268
Research Call Number
GPO Microfiche NAS 1.26:177268
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