- Additional Authors
- Center for Electronics and Electrical Engineering (U.S.). Semiconductor Devices and Circuits Division.
- Description
- 1 v.
- Summary
- An outline for a double-level metal process for the fabrication of circuits having a minimum linewidth of 3 micrometers is described.
- Series Statement
- NBSIR ; 87-3579
- Subject
- Note
- Cataloged from surrogate.
- "June 1987."
- Shipping list no.: unknown.
- Reproduction (note)
- Call Number
- GPO Microfiche C 13.58/6:985-86
- OCLC
- marcive232335705
- Author
Carver, G. P.
- Title
Double-level metallization [microform] : annual report for October 1, 1985 to September 30, 1986 / G.P. Carver ... [et al.].
- Imprint
Gaithersburg, MD : U.S. Dept. of Commerce, National Bureau of Standards, National Engineering Laboratory, Center for Electronics and Electrical Engineering, Semiconductor Electronics Division, [1987]
- Series
NBSIR ; 87-3579
- Reproduction
Microfiche. [Washington, D.C.] : Supt. of Docs., U.S. G.P.O., [1987]. 1 microfiche : negative.
- Added Author
Center for Electronics and Electrical Engineering (U.S.). Semiconductor Devices and Circuits Division.
- Gpo Item No.
0247-D (MF)
- Sudoc No.
C 13.58/6:985-86
- Research Call Number
GPO Microfiche C 13.58/6:985-86