Research Catalog

Band-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor

Title
Band-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor / W. D. Sun ... [and others].
Publication
Adelphi, MD : Army Research Laboratory, [1999]

Available Online

https://purl.fdlp.gov/GPO/LPS109421

Details

Additional Authors
  • Sun, W. D.
  • U.S. Army Research Laboratory.
Description
iii, 13 pages : digital, PDF file.
Series Statement
ARL-TR ; 1933
Uniform Title
ARL-TR (Aberdeen Proving Ground, Md.) ; 1933.
Subject
  • Field-effect transistors
  • Quantum wells
  • Photoluminescence
Note
  • Title from title screen (viewed Feb. 26, 2009).
  • "May 1999."
Bibliography (note)
  • Includes bibliographical references (page 7).
Type of Report (note)
  • Final;
Reproduction (note)
  • Electronic reproduction.
System Details (note)
  • Mode of access: Internet from ARL web site. Address as of 2/26/2009: http://www.arl.army.mil/arlreports/1999/ARL-TR-1933.pdf; current access via PURL.
Call Number
GPO Internet D 101.133:1933
OCLC
marcive310979505
Title
Band-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor / W. D. Sun ... [and others].
Publisher
Adelphi, MD : Army Research Laboratory, [1999]
Type of Content
text
Type of Medium
computer
Type of Carrier
online resource
Series
ARL-TR ; 1933
ARL-TR (Aberdeen Proving Ground, Md.) ; 1933.
System Details
Mode of access: Internet from ARL web site. Address as of 2/26/2009: http://www.arl.army.mil/arlreports/1999/ARL-TR-1933.pdf; current access via PURL.
Type Of Report
Final; 6/1/98-1/15/99.
Bibliography
Includes bibliographical references (page 7).
Funding
DA PR: AH47.
PE: 61102A.
Reproduction
Electronic reproduction. Adelphi, MD : Army Research Laboratory, [1999] Mode of access: World Wide Web. System requirements: Adobe Acrobat reader/
Connect to:
https://purl.fdlp.gov/GPO/LPS109421
Added Author
Sun, W. D.
U.S. Army Research Laboratory.
Other Form:
Band-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor 16 p. (OCoLC)45522782
Gpo Item No.
0324-A-01 (online)
Sudoc No.
D 101.133:1933
View in Legacy Catalog