- Additional Authors
- Description
- iii, 13 pages : digital, PDF file.
- Series Statement
- ARL-TR ; 1933
- Uniform Title
- ARL-TR (Aberdeen Proving Ground, Md.) ; 1933.
- Subject
- Note
- Title from title screen (viewed Feb. 26, 2009).
- "May 1999."
- Bibliography (note)
- Includes bibliographical references (page 7).
- Type of Report (note)
- Reproduction (note)
- System Details (note)
- Mode of access: Internet from ARL web site. Address as of 2/26/2009: http://www.arl.army.mil/arlreports/1999/ARL-TR-1933.pdf; current access via PURL.
- Call Number
- GPO Internet D 101.133:1933
- OCLC
- marcive310979505
- Title
Band-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor / W. D. Sun ... [and others].
- Publisher
Adelphi, MD : Army Research Laboratory, [1999]
- Type of Content
text
- Type of Medium
computer
- Type of Carrier
online resource
- Series
ARL-TR ; 1933
ARL-TR (Aberdeen Proving Ground, Md.) ; 1933.
- System Details
Mode of access: Internet from ARL web site. Address as of 2/26/2009: http://www.arl.army.mil/arlreports/1999/ARL-TR-1933.pdf; current access via PURL.
- Type Of Report
Final; 6/1/98-1/15/99.
- Bibliography
Includes bibliographical references (page 7).
- Funding
DA PR: AH47.
PE: 61102A.
- Reproduction
Electronic reproduction. Adelphi, MD : Army Research Laboratory, [1999] Mode of access: World Wide Web. System requirements: Adobe Acrobat reader/
- Connect to:
- Added Author
Sun, W. D.
U.S. Army Research Laboratory.
- Other Form:
Band-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor 16 p. (OCoLC)45522782
- Gpo Item No.
0324-A-01 (online)
- Sudoc No.
D 101.133:1933