Research Catalog

Deep diode arrays for X-ray detection

Title
Deep diode arrays for X-ray detection / principal investigator, Jay N. Zemel.
Author
Zemel, Jay N.
Publication
Philadelphia, Pennsylvania : University of Pennsylvania, The Moore School of Electrical Engineering ; Greenbelt, Maryland : NASA/Goddard Space Flight Center, 29 January 1984.

Details

Additional Authors
  • Moore School of Electrical Engineering, issuing body.
  • Goddard Space Flight Center, sponsoring body.
  • United States. National Aeronautics and Space Administration.
Description
1 microfiche ([4], 83 pages) : negative, illustrations; 11 x 15 cm.
Summary
"Temperature gradient zone melting process was used to form p-n junctions in bulk of high purity silicon wafers. These diodes were patterned to form arrays for X-ray spectrometers. The whole fabrication processes for these X-ray detectors are reviewed in detail. The p-n junctions were evaluated by (1) the dark diode I-V measurements, (2) the diode C sub I - V measurements, and (3) the MOS C-V measurements. The results showed that these junctions were linearly graded in charge distribution with low reverse bias leakage current flowing through them (few nA at -10 volts). The X-ray detection experiments showed that an FWHM of 500 eV was obtained from these diodes with a small bias of just -5 volts (for X-ray source Fe55). A theoretical model was proposed to explain the extra peaks found in the energy spectra and a very interesting point - cross talk effect was pointed out. This might be a solution to the problem of making really high resolution X-ray spectrometers."
Series Statement
NASA CR ; 175178
Uniform Title
NASA contractor report ; NASA CR-175178.
Subject
  • P-n junctions
  • Temperature gradients
  • X ray spectroscopy
  • Diodes
  • Energy spectra
  • X-ray spectroscopy
  • Spectrometer
  • Silicon diodes
  • Diodes, Semiconductor
  • Zone melting
  • NASA keywords: X ray spectroscopy - Arrays - Diodes - P-n junctions - Energy spectra - Bias - Temperature gradients - Silicon - Wafers - Melting
Note
  • "29 January 1984."
Bibliography (note)
  • Includes bibliographical references (pages 76-78).
Type of Report (note)
  • Final report.
Funding (note)
  • Sponsored by the NASA/Goddard Space Flight Center
Call Number
GPO Microfiche NAS 1.26:175178
OCLC
marcive245977553
Author
Zemel, Jay N., author.
Title
Deep diode arrays for X-ray detection / principal investigator, Jay N. Zemel.
Publisher
Philadelphia, Pennsylvania : University of Pennsylvania, The Moore School of Electrical Engineering ; Greenbelt, Maryland : NASA/Goddard Space Flight Center, 29 January 1984.
Type of Content
text
Type of Medium
microform
Type of Carrier
microfiche
Series
NASA CR ; 175178
NASA contractor report ; NASA CR-175178.
Bibliography
Includes bibliographical references (pages 76-78).
Type Of Report
Final report.
Funding
Sponsored by the NASA/Goddard Space Flight Center NAS-5-27285
Indexed Term
NASA keywords: X ray spectroscopy - Arrays - Diodes - P-n junctions - Energy spectra - Bias - Temperature gradients - Silicon - Wafers - Melting
Added Author
Moore School of Electrical Engineering, issuing body.
Goddard Space Flight Center, sponsoring body.
United States. National Aeronautics and Space Administration.
Other Form:
Online version: Zemel, Jay N. Deep diode arrays for X-ray detection (OCoLC)890478989
Gpo Item No.
0830-H-14 (MF)
Sudoc No.
NAS 1.26:175178
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