- Additional Authors
- NASA Glenn Research Center, issuing body.
- Description
- 1 online resource (65 pages) : illustrations.
- Series Statement
- NASA/TM ; 2003-211983
- Uniform Title
- NASA technical memorandum ; 2003-211983.
- Subject
- Note
- "February 2003."
- "Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page.
- Bibliography (note)
- Includes bibliographical references (pages 62-65).
- Type of Report (note)
- Funding (note)
- Sponsored by the National Aeronautics and Space Administration
- Source of Description (note)
- Description based on online resource; title from PDF title page (NASA, viewed May 25, 2017).
- Call Number
- GPO Internet NAS 1.15:211983
- OCLC
- marcive988028658
- Author
Freeman, Jon C., author.
- Title
Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) / Jon C. Freeman.
- Publisher
Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, February 2003.
- Type of Content
text
- Type of Medium
computer
- Type of Carrier
online resource
- Series
NASA/TM ; 2003-211983
NASA technical memorandum ; 2003-211983.
- Bibliography
Includes bibliographical references (pages 62-65).
- Type Of Report
Technical memorandum.
- Funding
Sponsored by the National Aeronautics and Space Administration WBS-22-755-12-27 E-13653
- Connect to:
- Added Author
NASA Glenn Research Center, issuing body.
- Other Form:
Print version: Basic equations for the modeling of gallium nitride (gan) high electron mobility transistors (hemts) (OCoLC)58927252
Microfiche version: Freeman, Jon C. Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) (OCoLC)54063282
- Gpo Item No.
0830-D (online)
- Sudoc No.
NAS 1.15:211983