Research Catalog

Surface and interface study of PdCr/SiC Schottky diode gas sensor annealed at 425 °C

Title
Surface and interface study of PdCr/SiC Schottky diode gas sensor annealed at 425 °C / Liang-Yu Chen [and three others].
Author
Chen, Liang Yu
Publication
Cleveland, Ohio : National Aeronautics and Space Administration, Lewis Research Center, May 1998.

Available Online

https://purl.fdlp.gov/GPO/gpo82964

Details

Additional Authors
Lewis Research Center, issuing body.
Description
1 online resource (6 pages) : illustrations.
Series Statement
NASA/TM ; 1998-107429
Uniform Title
NASA technical memorandum ; 1998-107429.
Subject
  • Hydrogen
  • Hydrocarbons
  • Sensors
  • Annealing
  • Metal films
Note
  • "May 1998."
  • "Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.
Bibliography (note)
  • Includes bibliographical references (page 6).
Type of Report (note)
  • Technical memorandum.
Funding (note)
  • Sponsored by the National Aeronautics and Space Administration
Source of Description (note)
  • Description based on online resource; title from PDF title page (NASA, viewed July 24, 2017).
Call Number
GPO Internet NAS 1.15:107429
OCLC
marcive994296897
Author
Chen, Liang Yu, author.
Title
Surface and interface study of PdCr/SiC Schottky diode gas sensor annealed at 425 °C / Liang-Yu Chen [and three others].
Publisher
Cleveland, Ohio : National Aeronautics and Space Administration, Lewis Research Center, May 1998.
Type of Content
text
Type of Medium
computer
Type of Carrier
online resource
Series
NASA/TM ; 1998-107429
NASA technical memorandum ; 1998-107429.
Bibliography
Includes bibliographical references (page 6).
Type Of Report
Technical memorandum.
Funding
Sponsored by the National Aeronautics and Space Administration WU-523-26-13-00 E-11155
Connect to:
https://purl.fdlp.gov/GPO/gpo82964
Added Author
Lewis Research Center, issuing body.
Other Form:
Print version: Surface and interface study of pdcr/sic schottky diode gas sensor annealed at 425 c (OCoLC)213890143
Microfiche version: Chen, Liang Yu. Surface and interface study of PdCr/SiC schottky diode gas sensor annealed at 425̊C (OCoLC)41148977
Gpo Item No.
0830-D (online)
Sudoc No.
NAS 1.15:107429
View in Legacy Catalog