Research Catalog

Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes

Title
Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes / C.M. Schnabel [and six others].
Author
Schnabel, C. M.
Publication
Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, February 2000.

Available Online

https://purl.fdlp.gov/GPO/gpo85917

Details

Additional Authors
NASA Glenn Research Center, issuing body.
Description
1 online resource (4 pages) : illustrations.
Series Statement
NASA/TM ; 2000-209648
Uniform Title
NASA technical memorandum ; 2000-209648.
Alternative Title
Correlation of electron-beam-induced current and synchrotron white-beam X-ray topography imaged defects and epilayer growth pits in 6H-SiC Schottky diodes
Subject
  • Correlation
  • Synchrotrons
  • Topography
  • Beam currents
  • Electron beams
  • Schottky diodes
  • Crystal defects
Note
  • "February 2000."
  • "Prepared for the 1999 International Conference on Silicon Carbide and Related Materials sponsored by North Carolina State University, Raleigh, North Carolina, October 10-15, 1999."
  • "Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page.
Bibliography (note)
  • Includes bibliographical references (page 4).
Type of Report (note)
  • Technical memorandum.
Funding (note)
  • Sponsored by the National Aeronautics and Space Administration
Source of Description (note)
  • Description based on online resource; title from PDF title page (NASA, viewed Oct. 25, 2017).
Call Number
GPO Internet NAS 1.15:209648
OCLC
marcive858263039
Author
Schnabel, C. M., author.
Title
Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes / C.M. Schnabel [and six others].
Publisher
Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, February 2000.
Type of Content
text
Type of Medium
computer
Type of Carrier
online resource
Series
NASA/TM ; 2000-209648
NASA technical memorandum ; 2000-209648.
Bibliography
Includes bibliographical references (page 4).
Type Of Report
Technical memorandum.
Funding
Sponsored by the National Aeronautics and Space Administration WU-505-23-2Q-00 E-11996
Connect to:
https://purl.fdlp.gov/GPO/gpo85917
Added Author
NASA Glenn Research Center, issuing body.
Other Form:
Print version: Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes (OCoLC)45475689
Microfiche version: Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes (OCoLC)44555025
Gpo Item No.
0830-D (online)
Sudoc No.
NAS 1.15:209648
View in Legacy Catalog