Research Catalog

Surface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications

Title
Surface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications / Fred Semendy [and three others].
Author
Semendy, Fred
Publication
Adelphi, MD : Army Research Laboratory, 2012.

Available Online

https://purl.fdlp.gov/GPO/gpo33169

Details

Additional Authors
U.S. Army Research Laboratory, issuing body.
Description
1 online resource (vi, 16 pages) : color illustrations.
Series Statement
ARL-TR ; 6128
Uniform Title
ARL-TR (Aberdeen Proving Ground, Md.) ; 6128.
Subject
  • Surfaces (Technology) > Analysis
  • Chemical vapor deposition
  • Optoelectronic devices
Note
  • Title from title screen (viewed on Jan. 17, 2013).
  • "September 2012."
Bibliography (note)
  • Includes bibliographical references (pages 11-12).
Type of Report (note)
  • Final.
Call Number
GPO Internet D 101.133:6128
OCLC
marcive824557063
Author
Semendy, Fred, author.
Title
Surface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications / Fred Semendy [and three others].
Publisher
Adelphi, MD : Army Research Laboratory, 2012.
Type of Content
text
Type of Medium
computer
Type of Carrier
online resource
Series
ARL-TR ; 6128
ARL-TR (Aberdeen Proving Ground, Md.) ; 6128.
Type Of Report
Final.
Bibliography
Includes bibliographical references (pages 11-12).
Connect to:
https://purl.fdlp.gov/GPO/gpo33169
Added Author
U.S. Army Research Laboratory, issuing body.
Other Form:
Print version: Semendy, Fred. Surface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications (OCoLC)824560306
Gpo Item No.
0324-A-01 (online)
Sudoc No.
D 101.133:6128
View in Legacy Catalog