Research Catalog

Third Internatinal Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits : Gerhard-Mercator University Duisburg, October 5-October 7, 1994.

Title
Third Internatinal Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits : Gerhard-Mercator University Duisburg, October 5-October 7, 1994.
Author
International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits (3rd : 1994 : Gerhard-Mercator University)
Publication
Piscataway, NJ : IEEE, [1994], ©1994.

Items in the Library & Off-site

Filter by

1 Item

StatusFormatAccessCall NumberItem Location
TextRequest in advance TK7871.P6 I58 1994gOff-site

Holdings

Details

Additional Authors
  • IEEE Microwave Theory and Techniques Society.
  • Institute of Mobile and Satellite Communication Techniques.
  • Institute of Electrical and Electronics Engineers. German Section.
Description
267 pages : illustrations; 30 cm
Alternative Title
  • INMMC '94
  • Integrated nonlinear microwave and millimeterwave circuits
Subject
  • Power amplifiers > Congresses
  • Microwave integrated circuits > Congresses
Note
  • Sponsored by IEEE German MTT/AP Joint Chapter and IMST.
  • "IEEE Catalog Number: 94TH8020"--T.p. verso.
Bibliography (note)
  • Includes bibliographical references and index.
Contents
  • Nonlinear Modelling of Power FETs and HBTs / C. Snowden -- Nonlinear Transistor Modelling Based on Measurements Results / R. Quere and J. Obregon -- Design and Performance of MESFET, HBT, and PHEMT Power Amplifiers / J. J. Komiak -- GaAs Amplifiers for Radar and Mobile Communication Systems / K. J. Schopf and E. Pettenpaul -- Design of Power MMICs and Power Combining Techniques / I. Bahl -- Rigorous Determination of the Stability of Linear N-Node Circuits From Network Determinants and the Appropriate Role of the Stability Factor K of Their Reduced Two-Ports / A. Platzker -- Wide Bandgap Semiconductor MESFETs for High Temperature Applications / R. J. Trew -- Modelling of Bias Dependent 1/f-Noise in GaAs-MESFETs / R. Henneberger, B. Roth and A. Beyer -- Approach for Developing a Large Signal Model for a 150 GHz HEMT / C. G. Diskus, C. Bergamaschi, M. Schefer, W. Patrick, B.-U. H. Klepser and W. Baechthold.
  • A Nonlinear HEMT Model for the Design of Frequency Doubler and Mixer Circuits / D. Hollmann, G. Baumann, R. Heilig and M. Schlechtweg -- Electrothermal Modeling of Multi-Emitter Heterojunction-Bipolartransistors (HBTs) / P. Baureis -- The Problem of Breakdown in MODFETs / A. Hulsmann, W. Bronner, K. Kohler, M. Baeumler, J. Braunstein and P. J. Tasker -- On-Wafer Large Signal Power, S-Parameter and Waveform Measurement System / M. Demmler, P. J. Tasker and M. Schlechtweg -- Large-Signal Extraction Method for GaAs and InP HEMT Diodes / D. Schreurs, S. Herrebout, B. Nauwelaers, W. De Raedt, Y. Baeyens, M. Van Rossum and M. Coady -- Nonlinearities in a MESFET Distributed Model / T. M. Martin-Guerrero and C. Camacho-Penalosa -- Compression Analysis of a High Power BJT Amplifier / J. W. Bandler, R. M. Biernacki, Q. Cai and S. H. Chen -- Calculation of the Power Capabilities of HBT Amplifiers Based on a New Physical HBT Model / V. Krozer, M. Ruppert, M. Schussler, K. Fricke, W. Y. Lee and H. L. Hartnagel.
  • Millimeterwave Power Amplifiers from 18 to 70 GHz / P. Bourne-Yaonaba, E. Aubame, P. Chaumas, P. Crozat, J. Favre, P. Fellon, L. Potteau, P. Quentin, T. Redon, P. Roux and G. Vernet -- Large Signal Design Criteria of Distributed Power Amplifiers Applied to a 2-18 GHz GaAs Chip Yielding High Power Density Performances / M. Campovecchio, B. Le Bras, M. Lajugie and J. Obregon.
ISBN
  • 0780324099 (softbound)
  • 0780324102 (microfiche)
OCLC
ocm32364364
Owning Institutions
Columbia University Libraries