Research Catalog

Clusters of interstitial atoms in silicon and germanium

Title
Clusters of interstitial atoms in silicon and germanium / Alexandre L. Aseev [and others].
Publication
Berlin : Akademie Verlag, [1994], ©1994.

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Additional Authors
Aseev, A. L. (Aleksandr Leonidovich)
Description
152 pages : illustrations; 25 cm
Uniform Title
Skoplenii͡a mezhdouzelʹnykh atomov v kremnii i germanii.
Subject
  • Semiconductors > Defects
  • Silicon crystals > Analysis
  • Germanium crystals > Analysis
  • Crystals > Analysis
  • Semiconductors
Note
  • Based on material from: Skoplenii︠a︡ mezhdouzelʹnykh atomov v kremnii i germanii.
Bibliography (note)
  • Includes bibliographical references (p. [141]-152).
Contents
Pt. I. Clusters of Interstitial Atoms in Metastable Configurations. Ch. 1. Structure of rod-like and (113)-defects. Ch. 2. Formation and growth of (113)-defects by in situ electron irradiation in a high-voltage electron microscope. Ch. 3. Shrinkage of rod-like and (113)-defects during electron irradiation in the high-voltage electron microscope -- Pt. II. Clusters of Interstitial Atoms as Dislocation-Type Defects. Ch. 4. Interaction of point defects with dislocations during electron irradiation in the high-voltage electron microscope. Ch. 5. Formation of dislocation loops after ion implantation of silicon crystals.
ISBN
3055016009
LCCN
gb 95004512
OCLC
ocm31934665
Owning Institutions
Columbia University Libraries