Research Catalog

Title

Delta-doping of semiconductors / edited by E.F. Schubert.

Publication

Cambridge ; New York : Cambridge University Press, 1995.

Items in the Library & Off-site

Details

Additional Authors

Schubert, E. Fred.

Description

xii, 604 pages : illustrations; 26 cm

Summary

• This book is the first to give a comprehensive review of the theory, fabrication, characterization, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology, including silicon very large scale integrated circuits, discrete devices, and optoelectronic devices.
• After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The optical, electrical, chemical, and structural techniques for characterizing doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles.
• The latter part of the book deals with particular devices, such as silicon field-effect transistors, and III-V structures for electronic and optoelectronic applications. The book will be of considerable interest to graduate students, researchers, and engineers in the fields of semiconductor physics and microelectronic engineering.

Subject

• Semiconductors > Design and construction
• Semiconductor doping
• Molecular beam epitaxy
• Field-effect transistors

Bibliography (note)

• Includes bibliographical references and index.

Contents

• 1. Introduction / E. F. Schubert -- 2. Electronic structure of delta-doped semiconductors / C. R. Proetto -- 3. Recent progress in delta-like confinement of impurities in GaAs / K. H. Ploog -- 4. Flow-rate modulation epitaxy (FME) of III-V semiconductors / T. Makimoto and Y. Horikoshi -- 5. Gas source molecular beam epitaxy (MBE) of delta-doped III-V semiconductors / D. Ritter -- 6. Solid phase epitaxy for delta-doping in silicon / I. Eisele -- 7. Low temperature molecular beam epitaxy (MBE) of silicon / H.-J. Gossmann -- 8. Secondary ion mass spectrometry of delta-doped semiconductors / H. S. Luftman -- 9. Capacitance-voltage profiling / E. F. Schubert -- 10. Redistribution of impurities in III-V semiconductors / E. F. Schubert -- 11. Dopant diffusion and segregation in delta-doped silicon films / H.-J. Gossmann -- 12. Characterisation of silicon and aluminium delta-doped structures in GaAs / R. C. Newman --
• 13. The DX-center in silicon delta-doped GaAs and Al[subscript x]Ga[subscript 1-x]As / P. M. Koenraad -- 14. Luminiscence and ellipsometry spectroscopy / H. Yao and E. F. Schubert -- 15. Photoluminescence and Raman spectroscopy of single delta-doped III-V semiconductor heterostructures / J. Wagner and D. Richards -- 16. Electron transport in delta-doped quantum wells / W. T. Masselink -- 17. Electron mobility in delta-doped layers / P. M. Koenraad -- 18. Hot electrons in delta-doped GaAs / M. Asche -- 19. Ordered delta-doping / R. L. Headrick, L. C. Feldman and B. E. Weir -- 20. Delta-doped channel III-V field-effect transistors (FETs) / W.-P. Hong -- 21. Selectively doped heterostructure devices / E. F. Schubert -- 22. Silicon atomic layer doping field-effect transistors (FETs) / K. Nakagawa and K. Yamaguchi -- 23. Planar-doped barrier devices / R. J. Malik -- 24. Silicon interband and intersubband photodetectors / I. Eisele --
• 25. Doping superlattice devices / E. F. Schubert.

ISBN

• 0521482887 (hardback)
• 0521017963 (pbk.)

LCCN

94048903

OCLC

• 503694822
• ocn503694822

Owning Institutions

Columbia University Libraries