Research Catalog

Process and device simulation for MOS-VLSI circuits / edited by Paolo Antognetti ... [et al.].

Title
Process and device simulation for MOS-VLSI circuits / edited by Paolo Antognetti ... [et al.].
Author
NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits (1982 : Urbino, Italy)
Publication
Boston : Nijhoff ; Hingham, MA : Distributors for the U.S. and Canada, Kluwer Boston, 1983.

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Details

Additional Authors
Antognetti, Paolo.
Description
xii, 619 p. : ill.; 25 cm.
Series Statement
NATO ASI series. Series E, Applied sciences ; no. 62
Uniform Title
NATO ASI series. Series E, Applied sciences ; no. 62.
Subject
  • Integrated circuits > Simulation methods > Congresses
  • Metal oxide semiconductors > Simulation methods > Congresses
Note
  • "Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, SOGESTA, Urbino, Italy, July 12-23, 1982"--T.p. verso.
  • "Published in cooperation with NATO Scientific Affairs Division."
Bibliography (note)
  • Includes bibliographical references.
ISBN
902472824X (Netherlands)
LCCN
83004018
Owning Institutions
Columbia University Libraries