Research Catalog

Title

Stress-induced phenomena in metallization : third international workshop, Palo Alto, CA June 1995 / editors, Paul S. Ho [and others].

Publication

New York : American Institute of Physics, [1996], ©1996.

Items in the Library & Off-site

Holdings

Details

Additional Authors

Ho, P. S.

Description

vii, 304 pages : illustrations; 25 cm.

Series Statement

AIP conference proceedings ; no. 373

Uniform Title

AIP conference proceedings ; no. 373.

Subject

• Semiconductors > Defects > Congresses
• Metallic films > Congresses
• Thin film devices > Defects > Congresses
• Aluminum films > Congresses

Note

• "DOE CONF-9506336"--T.p. verso.

Bibliography (note)

• Includes bibliographical references and index.

Contents

• Analysis of Stresses in Passivated Metal Lines / U. Burges, I. Eppler, W. Schilling, H. Schroeder and H. Trinkaus -- Investigation of Stresses in Passivated Gold Lines / R. Pollak, H. Huck, H. Haselier, P. Ehrhart and W. Schilling -- Plastic Deformation and Stress-Induced Voiding in Al-Cu Interconnects / D. Jawarani, M. Fernandes, H. Kawasaki and P. S. Ho -- Stress Relaxation and Microstructural Change in Passivated Al(Cu) Lines During Isothermal Annealing / I.-S. Yeo, C.-N. Liao, P. S. Ho and H. Kawasaki -- Electrical Measurement of Stress-Induced Void Growth / T. D. Sullivan, D. P. Bouldin and D. H. Yao -- Stress Generation in Al-Si-Cu Metallization Resulting from Thermal Cycling Between -196[degree]C and 250[degree]C / F. Baldwin, P. H. Holloway, M. Bordelon and T. R. Watkins -- Stress Concentrations at W Vias / J. R. Lloyd, J. B. Sauber and J. A. Walls -- Modeling Electromigration in Multi-Level Interconnects / D. Chidambarrao and M. M. Pelella --
• Stress and Alloying Effects in Electromigration / M. A. Korhonen, T. Liu, D. D. Brown and C.-Y. Li -- Electromigration-Induced Voiding Mechanisms in Metallizations / O. Kraft, M. Bauer and E. Arzt -- Initial Void Formation in Bamboo Al-Cu(1%) Two-Level Structure / P.-H. Wang, P. S. Ho, C. Lee and H. Kawasaki -- Comparison of Electromigration in Submicron Al(Cu) and Cu Thin Film Lines / C.-K. Hu, D. C. Edelstein, C. Uzoh and T. Sullivan -- Effects of Aluminum Texture on Electromigration Lifetime / H. Toyoda, T. Kawanoue, S. Ito, M. Hasunuma and H. Kaneko -- The Effect of Test Structure and Stress Condition on Electromigration Failure / H. Kawasaki, C. Lee, S. G. H. Anderson and F. Pintchovski -- Cu Behaviors Induced by Aging and Their Effects on Electromigration Resistance on Al-Cu Lines / T. Nogami and T. Nemoto --
• In-Situ Side-View Observation of Electromigration in Layered Al Lines by Ultrahigh Voltage Transmission Electron Microscopy / H. Okabayashi, H. Kitamura, M. Komatsu and H. Mori -- Line Length Effects on Lifetime Measurements and Resistance Saturation During Electromigration Testing / R. G. Filippi, G. A. Biery and R. A. Wachnik -- Dependence of Electromigration Failure Modes on EM-Induced and Thermally-Induced Mechanical Stress in Interconnect Lines / S. Pramanick, D. D. Brown, V. Pham, P. Besser, J. Sanchez, N. Bui and J. T. Yue -- Resistance Oscillations Induced by DC Electromigration / S. Shingubara, K. Fujiki, H. Sakaue and T. Takahagi -- Void, Si Nodule and Current Observations by Optical Beam Heating and Current Change Measurement / K. Nikawa and S. Inoue -- Interface Diffusion and Electromigration Failure in Narrow Aluminum Lines with Barrier Layers / R. A. Augur, F. van den Elshout and R. A. M. Wolters --
• Highly Electromigration-Resistive Via Structure Using Al-Reflow for Multi-Level Interconnection / I. S. Park, H.-D. Lee, Y. J. Wee, C. S. Park, G. H. Choi, S. I. Lee, M. Y. Lee and J. G. Lee.

ISBN

1563964392

LCCN

96084949

OCLC

ocm35079381

Owning Institutions

Columbia University Libraries