Research Catalog

Title

Advances in resist technology and processing XIII : 11-13 March 1996, Santa Clara, California / Roderick R. Kunz, chair/editor ; sponsored by SPIE--the International Society for Optical Engineering ; cooperating organizations, SEMI--Semiconductor Equipment and Materials International, SEMATECH.

Publication

Bellingham, Wash., USA : International Society for Optical Engineering, [1996], ©1996.

Items in the Library & Off-site

Holdings

Details

Additional Authors

• Kunz, Roderick R.
• Society of Photo-optical Instrumentation Engineers.
• Semiconductor Equipment and Materials International.
• SEMATECH (Organization)

Description

xi, 774 pages : illustrations; 28 cm.

Series Statement

Proceedings SPIE--the International Society for Optical Engineering ; v. 2724

Uniform Title

Proceedings of SPIE--the International Society for Optical Engineering ; v. 2724.

Subject

• Photoresists > Congresses

Bibliography (note)

• Includes bibliographical references and index.

Contents

• Patterning ULSI Circuits / J. R. Carruthers -- University-industry relations: what do we do now? / J. A. Armstrong -- Science and technology policy in the 104th Congress / Z. Lofgren -- Lithographic performance of an environmentally stable chemically amplified photoresist (ESCAP) / W. E. Conley, G. Breyta, W. R. Brunsvold, R. A. DiPietro, D. C. Hofer, S. J. Holmes, H. Ito, R. Nunes, G. Fichtl, P. Hagerty and J. W. Thackeray -- PED-stabilized chemically amplified photoresist / T. Tanabe, Y. Kobayashi and A. Tsuji -- Quarter- and subquarter-micron deep-UV lithography with chemically amplified positive resist / Y. Onishi, K. Sato, K. Chiba, M. Asano, H. Niki, R. H. Hayase and T. Hayashi -- Undercut elimination in DUV negative systems: application to lithography and etching of metal levels / F. Vinet, M. Heitzmann, T. Mourier, D. Poncet, B. Previtali, C. Vizioz, P. J. Paniez and A. Schiltz -- Reduction of substrate dependency of chemically amplified resist / J.-S. Chun, C.-K. Bok and K.-H. Baik -- Free volume variations during exposure and PEB of DUV positive resists: effect on dissolution properties / L. Pain, C. Le Cornec, C. Rosilio and P. J. Paniez -- Postexposure bake characterization and parameter extraction for positive deep-UV resists through broad-area exposure experiments / M. A. Zuniga and A. R. Neureuther -- Substrate effects of silicon nitride on i-line and deep-UV lithography / B.-C. Kim, H. Huh and J. J. Kim -- Substrate effect in chemically amplified resist / S. Mori, T. Watanabe, K. Adachi, T. Fukushima, K. Uda and Y. Sato -- Stable process for chemically amplified resists using a new adhesion promotor / M. Endo, S. Kawasaki and A. Katsuyama -- Method of comparing chemical contrast with resist contrast / G. M. Wallraff, J. Opitz, G. Breyta, H. Ito and B. M. Fuller -- Calibration of chemically amplified resist models / J. D. Byers, J. S. Petersen and J. L. Sturtevant -- Examination of isolated and grouped feature bias in positive-acting chemically amplified resist systems / J. S. Petersen and J. D. Byers -- Design of high-performance chemically ammplified resist / T. Niinomi, H. Tomiyasu, Y. Kameyama, M. Tsukamoto, Y. Tanaka, J. Fujita, S. Shimomura and T. Ochiai -- Application of photodecomposable base concept to two-component deep-UV chemically amplified resists / S. Funato, N. Kawasaki, Y. Kinoshita, S. Masuda, H. Okazaki, M. Padmanaban, T. Yamamoto and G. Pawlowski -- Synthesis and lithographic performance of highly branched polymers from hydroxyphenylmethylcarbinols / J. R. Sounik, R. Vicari, P.-H. Lu, E. Kokinda, S. A. Ficner and R. R. Dammel -- Effect of substituent groups of phenol-derivative dissolution inhibitors on inhibition efficiency / N. Kihara, S. Saito, T. Naito, T. Ushirogouchi, K. Asakawa and M. Nakase -- Halation reduction for single-layer DUV resist processing / H. Yoshino, T. Itani, S. Hashimoto, M. Yamana, N. Samoto and K. Kasama -- Acetal-based three-component CARs: a versatile concept to tailor optical properties of resists / M. Padmanaban, Y. Kinoshita, N. Kawasaki, H. Okazaki, S. Funato and G. Pawlowski -- Manipulation of the thermal properties of positive DUV polymers / R. F. Sinta, G. G. Barclay, T. G. Adams and D. R. Medeiros -- Narrow polydispersity polymers for microlithography: synthesis and properties / G. G. Barclay, C. J. Hawker, H. Ito, A. J. Orellana, P. R. L. Malenfant and R. F. Sinta -- Characterization of Shipley's positive deep-UV experimental resists: deblocking studies / J. F. Cameron, A. J. Orellana, M. M. Rajaratnam and R. F. Sinta -- Photosensitization in dyed and undyed APEX-E DUV resist / J. L. Sturtevant, W. E. Conley and S. E. Webber -- Chemically amplified negative-tone deep-UV photoresist based on poly(alkoxy styrenes) containing acetal groups / J.-H. Park, S.-J. Kim, J.-H. Kim, D.-C. Seo, K.-D. Kim, S.-Y. Park and H. Lee -- Completely water-processable and other chemically amplified resists from maleic anhydride copolymers / A. M. Vekselman and G. D. Darling -- Novel main chain scission positive-tone photoresists for 248-nm lithography with wide post-exposure processing latitude as an alternative to chemically amplified systems / N. D. McMurdie and J. B. O'Dwyer -- Negative-tone resist system using vinyl cyclic acetal crosslinker / W.-S. Huang, K. Y. Lee, R. K.-J. Chen and D. Schepis -- Design and properties of new deep-UV positive photoresist / S.-J. Choi, S.-Y. Jung, C.-H. Kim, C.-G. Park, W.-S. Han, Y.-B. Koh and M.-Y. Lee -- Protecting groups for 193-nm photoresists / R. D. Allen, R. Sooriyakumaran, J. Opitz, G. M. Wallraff, R. A. DiPietro, G. Breyta, D. C. Hofer, R. R. Kunz, S. Jayaraman, R. Shick, B. Goodall, U. Okoroanyanwu and C. G. Wilson -- Bilayer resist approach for 193-nm lithography / U. P. Schaedeli, E. Tinguely, A. J. Blakeney, P. A. Falcigno and R. R. Kunz -- Evaluation of cycloolefin-maleic anhydride alternating copolymers as single-layer photoresists for 193-nm photolithography / T. I. Wallow, F. M. Houlihan, O. Nalamasu, E. A. Chandross, T. X. Neenan and E. Reichmanis -- Limits to etch resistance for 193-nm single-layer resists / R. R. Kunz, S. C. Palmateer, A. R. Forte, R. D. Allen, G. M. Wallraff, R. A. DiPietro and D. C. Hofer -- Novel alkaline-soluble alicyclic polymer poly(TCDMACOOH) for ArF chemically amplified positive resists / K. Maeda, K. Nakano, T. Ohfuji and E. Hasegawa -- Dissolution behavior of alicyclic polymers designed for ArF excimer laser lithography / T. Ohfuji, K. Maeda, K. Nakano and E. Hasegawa -- TSI process performance in a transformer-coupled plasma dry develop tool / J. M. Hutchinson, Y. Melaku, W. Nguyen and S. Das -- Block and random copolymer resists designed for 193-nm lithography and environmentally friendly supercritical CO[subscript 2] development / A. H. Gabor, R. D. Allen, P. M. Gallagher-Wetmore and C. K. Ober -- Effect of low-molecular-weight dissolution-promoting compounds in DNQ-novolac positive resist / Y. Kawabe, S. Tan, F. Nishiyama, S. Sakaguchi, T. Kokubo, A. J. Blakeney and L. Ferreira -- Contrast-boosted resist using a polarity-change reaction during aqueous base development / S. Uchino, T. Ueno, S. Migitaka, J. Yamamoto, T. P. Tanaka, F. Murai, H. Shiraishi and M. Hashimoto -- Novel class of highly selective divanillin-based PACs / A. Medina, L. Ferreira, S. P. Tadros, J. J. Sizensky, M. Fregeolle, A. J. Blakeney and M. A. Toukhy -- Bake mechanisms in novolak-based photoresist films: investigation by contact angle measurements / E. Fadda, C. Clarisse and P. J. Paniez -- Selectively esterified novolac resins: a study of resist properties as a function of novolac molecular weight and composition / A. T. Jeffries III, D. J. Brzozowy, B. T. Beauchemin, A. A. Naiini, E. A. Fitzgerald and P. M. Gallagher-Wetmore -- Factors affecting the dissolution rate of novolac resins II: developer composition effects / C. L. Henderson, P. C. Tsiartas, L. L. Simpson, K. D. Clayton, S. Pancholi, A. R. Pawlowski and C. G. Willson -- Diffusion limitations in high-resolution lithography / L. Bauch, U. A. Jagdhold, M. Bottcher and G. G. Mehliss -- Application of DNQ-based microlithography to patterning bioactive molecules and cells / D. V. Nicolau, T. Taguchi, H. Taniguchi, S. Yoshikawa and M. V. Dusa -- Lithographic characterization of AZ 7800 high-resolution photoresist / S. A. Ficner, O. Alile, P.-H. Lu, E. Kokinda and R. R. Dammel -- Diazonaphthoquinone-5-sulfonate composition variants: synthesis and properties / A. Zampini, H. F. Sandford, W. J. Cardin and M. J. O'Leary -- Standing waves reducing additives / M. A. Toukhy and G. McCormick -- Isolation of novolak resin at low temperature / M. D. Rahman, D. P. Aubin and D. N. Khanna -- Dissolution behavior of novolak resins / R. K.-J. Chen, G. Jordhamo and W. M. Moreau -- High-performance TSI process for e-beam using vapor-applied crosslinking silylating agents / M. Irmscher, B. Hofflinger, R. Springer, C. Stauffer and W. Peterson --
• Evaluation of the dry resist octavinylsilsesquioxan and its application to three-dimensional electron-beam lithography / H. W. P. Koops, S. V. Babin, M. Weber, G. Dahm, A. Holopkin and M. N. Lyakhov -- Deep-UV hardening of deep-UV resists / G. Jordhamo and W. M. Moreau -- Excimer laser photoresist stripping / M. Genut, O. Tehar-Zahav, E. Iskevitch and B. Livshitz -- Negative resists for electron-beam lithography utilizing acid-catalyzed intramolecular dehydration of phenylcarbinol / S. Migitaka, S. Uchino, T. Ueno, J. Yamamoto, K. Kojima, M. Hashimoto and H. Shiraishi -- Exposing of surface layers of PMMA structures by low-energy (1000-6000 eV) electron irradiation / T. Borzenko, Yu. Koval and V. Kudryashov -- Photoresist stabilization for ion implant processing / M. F. Ross, W. R. Livesay, V. Starov, K. Ostrowski and S. Y. Wong -- High-throughput process optimization using the EZ technique / M. A. Toukhy, K. R. Schlicht, P. Morra and S. Chanthalyma -- Development of two new thick-film photoresists / S. A. Ficner, J. Hermanowski, P.-H. Lu, E. Kokinda, Y. M. Perez and R. R. Dammel -- New contributions to automated processing using different photoresists for microelectronics fabrication / D. Gh. Ulieru -- New process for resist removal after lithography process using adhesive tape / T. Kubozono, Y. Moroishi, Y. Ohta, H. Shimodan and N. Morluchi -- Highly absorbing ARC for DUV lithography / E. K. Pavelchek, J. D. Meador, D. J. Guerrero, J. E. Lamb III, A. Kache, M. doCanto, T. G. Adams, D. R. Stark and D. A. Miller -- Latitude of the BAR process compared to the monolayer and TAR processes for 0.35-[mu]m design rules at gate level / S. Andre and A. P. Weill -- Critical dimension control for i-line 0.35-[mu]m device using a new antireflective coating / D. C. Baker and E. S. Capsuto -- Enhanced i-line lithography using AZ BARLi coating / T.-S. Yang, T. H. Kook, W. A. Josephson, M. A. Spak and R. R. Dammel -- Removable organic antireflection coating / J. L. Sturtevant, L. J. Insalaco, T. Flaim, V. Krishnamurthy, J. D. Meador, J. S. Petersen and A. Eckert -- Optimization of i-line resist process for 0.5-[mu]m polysilicon gate structures using a top-coat layer / J.-P. E. Chollet and M.-T. Basso -- Modeling of bottom antireflection layers: sensitivity to optical constants / R. R. Dammel and R. A. Norwood.

ISBN

0819421006

LCCN

91061057

OCLC

ocm35108651

Owning Institutions

Columbia University Libraries