Research Catalog

Title

1996 International Integrated Reliability Workshop final report : Stanford Sierra Camp, Lake Tahoe, California, October 20-23, 1996 / sponsored by the IEEE Electron Devices Society and the IEEE Reliability Society.

Author

International Integrated Reliability Workshop (1996 : Lake Tahoe, Calif.)

Publication

[New York] : IEEE Electron Devices Society : IEEE Reliability Society, [1997], ©1997.

Items in the Library & Off-site

Details

Additional Authors

• IEEE Electron Devices Society.
• IEEE Reliability Society.

Description

vi, 175 pages : illustrations; 28 cm

Subjects

• Integrated circuits > Wafer-scale integration > Reliability > Congresses
• Integrated circuits > Reliability > Congresses

Note

• "IEEE catalog number 96TH8215."

Bibliography (note)

• Includes bibliographical references.

Contents

• Keynote Address: Does Building-In Reliability Imply More or Less Wafer-Level Reliability Testing? / J. W. McPherson -- BIR-Breaking Down the Barriers / J. Molyneaux, N. Finucane and J. Prendergast [et al.] -- The Application of a Direct Parameter Extraction Strategy to Hot-Carrier Reliability Simulation of n-Channel LDD MOSFETs / S. Minehane, A. Meehan and P. O'Sullivan [et al.] -- Combined Topography and AC Field Probing with a Micromachined SFM Tip for Building In Reliability / D. W. van der Weide, P. Neuzil and T. Bork [et al.] -- Shear Test for Adhesion Measurement of Small Structures / G. Schammler, K. Buschick and R. Hahn [et al.] -- Electrical Characteristics of Wedge-Shaped Gate-Oxide in Recessed-LOCOS / Y.-T. Woo, C.-S. Hwang and S.-J. Hong [et al.] -- Predicting Oxide Reliability From In Line Process Statistical Reliability Control / J. Prendergast, E. Murphy and M. Stephenson -- Process Sensors, Simulation, and Control to Build In Reliability / G. W. Rubloff --
• A Test Structure for Plasma Process Charging Monitor in Advanced CMOS Technologies / S. U. Kim -- A VCO Test Structure for Characterizing AC Hot-Carrier Degradation / N. Koike and K. Tatsuuma -- Is BPSG an Effective Sodium Barrier? - A WLR Success Story / J. A. Shideler, M. Ivey and J. Finn [et al.] -- Test Structures for Rapid Prototyping of Gas and Pressure Sensors / M. G. Buehler, L.-J. Cheng and D. P. Martin -- Wafer Level Reliability Application to Manufacturing of High Performance Microprocessor / K. Sarma, M. Bahrami and K. Mistry -- A Step-By-Step Method for the Elimination of Burn-In as a Necessary Screen / T. E. Turner -- Temperature-Constant BT Tests of Parasitic MOSFETs / H. Katto -- Reverse Antenna Effect Due to Process-Induced Quasi-Breakdown of Gate Oxide / J. F. Chen, C. Gelatos and P. Tobin [et al.] -- Thermal Analysis of the Fusion Limits of Metal Interconnect under Short Duration Current Pulses / K. Banerjee, S. Rzepka and A. Amerasekera [et al.] --
• Response of Aged Line/Stud Structures to Stepped Current Stressing / S. Yankee, T. Sullivan and W. Klaasen -- Temperature Ageing as a Means of Improving the Electromigration Performance of an Aluminium Copper Alloy Metallization / S. Foley, D. Martin and A. Mathewson -- Impact of Boron Penetration at the p[superscript +]-Poly/Gate-Oxide Interface on the Device Reliability of Deep Submicron CMOS Logic Technology / D. K. Nayak, M.-Y. Hao and R. Rakkhit -- Hole Trapping as the Rate-Limiting Factor in LDD nMOSFET Degradation / A. Gupta, D. Sugiharto and C. Yang [et al.] -- Effects of N[subscript 2]O or NO Annealing of Wet Oxide at Different Times on TDDB Characteristics / M. Mazumder, A. Teramoto and K. Kobayashi [et al.] -- Physically Based Predictive Model of Oxide Charging / J. F. Conley, P. M. Lenahan and B. D. Wallace -- Injected Charge as an Indicator for a t[subscript bd] Increase of Pre-Stressed Gate Oxides / A. Martin, P. O'Sullivan and T. Ribbrock [et al.] --
• Thickness and Temperature Effects on TDDB for DC and Dynamic Stressing of Thin Oxide / S.-H. Soh, M. Naidu and J. Hwu [et al.] -- Wafer-Level Reliability Techniques / D. G. Pierce and E. S. Snyder -- Building in Reliability / J. Prendergast and J. Steeves -- Interconnect Reliability / T. Sullivan and S. Pramanick -- Thin Oxide Reliability / J. S. Suehle and R. S. Hijab -- Can Hot Carriers "Break" Thermal Oxide / B. Schlund -- Oxide Trapped Charge and Time to Breakdown of Pulsed Current Measurements in the Fowler-Nordheim Regime / A. Martin, R. Duane and P. O'Sullivan [et al.] -- Process Induced Charging Damage in Thin Gate Oxides / G. Bersuker, J. Werking and D. Y. Chan -- CMOS Hot-Carrier Degradation and Device Lifetime At Cryogenic Temperatures / J. Wang-Ratkovic, R. C. Lacoe and K. P. MacWilliams [et al.] -- Forecasting Field Failure Rate / J. T. May.

ISBN

• 0780335988 (softbound)
• 0780335996 (microfiche)

LCCN

96077509

OCLC

ocm36908636

Owning Institutions

Columbia University Libraries