Research Catalog
In-line characterization techniques for performance and yield enhancement in microelectronic manufacturing : 1-2 October 1997, Austin, Texas
- Title
- In-line characterization techniques for performance and yield enhancement in microelectronic manufacturing : 1-2 October 1997, Austin, Texas / Damon K. DeBusk, Sergio Ajuria, chairs/editors ; sponsored ... by SPIE--The International Society for Optical Engineering ; cooperating organizations, SEMI--Semiconductor Equipment and Materials International, Solid State Technology, [and] The Electrochemical Society.
- Publication
- Bellingham, Wash., USA : SPIE, [1997], ©1997.
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Text | Request in advance | TK7871.85 .I485 1997g | Off-site |
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Details
- Additional Authors
- Description
- v, 186 pages : illustrations; 28 cm.
- Series Statement
- SPIE proceedings series ; v. 3215
- Uniform Title
- Proceedings of SPIE--the International Society for Optical Engineering ; v. 3215.
- Subjects
- Bibliography (note)
- Includes bibliographical references and index.
- Contents
- Evaluation of lifetime and Hi-Q modules in surface charge analysis / F. Lin, C. Burt and P. Schay [et al.] -- Process monitoring of ultrathin oxides using surface charge analysis / A. H. Field -- Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique / Y. Ma, J. L. Lee and J. L. Benton [et al.] -- Mobile charge testing of sodium-contaminated thermal oxides using corona temperature stressing / A. M. Hoff and D. K. DeBusk -- Noncontact surface-resistivity measurements on production wafers / S. Liberman -- Room-temperature luminescence diagnostics in polycrystalline silicon / Y. Koshka, S. Ostapenko and L. Jastrzebski [et al.] -- Defect characterization and light scattering by PSL spheres on tungsten CMP wafers / P. Ding, G. W. Starr and R. Chowdhury [et al.] -- Electrical defect density modeling for different technology nodes, process complexity, and critical areas / T. Winter --
- In-line charge-trapping characterization of dielectrics for sub-0.5-[mu]m CMOS technologies / P. K. Roy, C. M. Chacon and Y. Ma [et al.] -- Cyclic I-V and Q-V: new measurement techniques for monitoring processes and processing-induced damage / M. Okandan, S. J. Fonash and J. Werking -- Implementation of in-line Fowler-Nordheim testing for tunnel oxide thickness determination in manufacturing / L. D. John, R. G. Cosway and M. D. Griswold [et al.] -- In-line testing of antenna-type test structures for separation of sources of process-induced damage / T. Brozek, D. Roberts and T. Dao -- Monitoring process-induced oxide breakdown and its correlation to interface traps / A. Balasinski, R. Hodges and J. Walters [et al.] -- Molecular and ionic contamination monitoring for clean-room air and wafer surfaces / P. Sun, M. Adams and L. Shive [et al.] -- Rapid in-fab monitoring of ion implant doses using total reflection x-ray fluorescence / C. A. Weiss, T. Z. Hossain and E. Zschech [et al.] --
- Process damage in single-wafer cleaning process / S. Nadahara, K. Saki and H. Tomita -- New aspects of optical scatterometry applied to microtechnology / J. Bischoff, L. Hutschenreuther and H. Truckenbrodt -- Novel method to calculate the probability of silicon damage of DRAM based on the process control capability / M. King, J.-C. Leu and S.-S. Chen [et al.] -- Computer simulation for estimation of dislocation multiplication due to gravitational stress: challenges and opportunities toward slip-free 300-mm-diameter silicon wafers for ultralarge-scale integration / H. Shimizu, S. Isomae and K. Minowa [et al.] -- Contaminant sources causing non-stick-on-pad during die bonding / D. E. Posey and T. Z. Hossain.
- ISBN
- 0819426474
- OCLC
- ocm37744642
- Owning Institutions
- Columbia University Libraries