Research Catalog
Solid state electronic devices
- Title
- Solid state electronic devices / Ben G. Streetman and Sanjay Banerjee.
- Author
- Streetman, Ben G.
- Publication
- Upper Saddle River, N.J. : Prentice Hall, [2000], ©2000.
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Status | Format | Access | Call Number | Item Location |
---|---|---|---|---|
Text | Request in advance | TK7871.85 .S77 2000 | Off-site |
Holdings
Details
- Additional Authors
- Banerjee, Sanjay.
- Description
- xviii, 558 pages : illustrations; 25 cm.
- Summary
- "This is the fifth edition of the most widely used introductory book on semiconductor materials, physics, devices and technology. The book was written with two basic goals in mind: 1) develop the basic semiconductor physics concepts to understand current and future devices; 2) provide a sound understanding of current semiconductor devices and technology so that their applications to electronic and optoelectronic circuits and systems can be appreciated."--BOOK JACKET.
- Series Statement
- Prentice-Hall series in solid state physical electronics
- Uniform Title
- Prentice-Hall series in solid state physical electronics.
- Subject
- Semiconductors
- Bibliography (note)
- Includes bibliographical references and index.
- Contents
- 1. Crystal Properties and Growth of Semiconductors -- 2. Atoms and Electrons -- 3. Energy Bands and Charge Carriers in Semiconductors -- 4. Excess Carriers in Semiconductors -- 5. Junctions -- 6. Field-Effect Transistors -- 7. Bipolar Junction Transistors -- 8. Optoelectronic Devices -- 9. Integrated Circuits -- 10. Negative Conductance Microwave Devices -- 11. Power Devices -- App. I. Definitions of Commonly Used Symbols -- App. II. Physical Constants and Conversion Factors -- App. III. Properties of Semiconductor Materials -- App. IV. Derivation of the Density of States in the Conduction Band -- App. V. Derivation of Fermi-Dirac Statistics -- App. VI. Dry and Wet Thermal Oxide Thickness as a Function of Time and Temperature -- App. VII. Solid Solubilities of Impurities in Si -- App. VIII. Diffusivities of Dopants in Si and SiO[subscript 2] -- App. IX. Projected Range and Straggle as a Function of Implant Energy in Si.
- ISBN
- 0130255386 (casebound)
- LCCN
- 99016963
- OCLC
- ocm41540187
- Owning Institutions
- Columbia University Libraries