Research Catalog

Title

State-of-the-art program on compound semiconductors (SOTAPOCs XXX) : proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX) / editor, C.R. Abernathy [and others] ; Electronics Division [of the Electrochemical Society].

Author

State-of-the-Art Program on Compound Semiconductors (30th : 1999 : Seattle, Wash.)

Publication

Pennington, New Jersey : Electrochemical Society, [1999], ©1999.

Items in the Library & Off-site

Holdings

Details

Additional Authors

• Abernathy, C. R.
• Electrochemical Society. Electronics Division.
• Electrochemical Society. Meeting (195th : 1999 : Seattle, Wash.)

Description

viii, 263 pages : illustrations; 23 cm.

Series Statement

Proceedings ; v. 99-4

Uniform Title

Proceedings (Electrochemical Society) ; v. 99-4.

Alternative Title

SOTAPCOs XXX

Subject

• Compound semiconductors > Congresses

Note

• "The thirtieth State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX) was held at the 195th Meeting of the Electrochemical Society, Inc., May 2-7, 1999 in Seattle Washington."--Preface.

Bibliography (note)

• Includes bibliographic references and indexes.

Contents

• Inductively-Coupled Plasma Deposition of Low Temperature Silicon Dioxide and Silicon Nitride Films for III-V Applications / K. D. Mackenzie, J. W. Lee and D. J. Johnson -- Silicon Carbon Nitride Films Deposited by ECR CVD / K.-H. Chen, J.-J. Wu and C.-Y. Wen / [et al.] -- High-Density Plasma Etching of Group-III Nitride Films for Device Application / R. Shul, L. Zhang and A. Baca / [et al.] -- Highly Selective Etch Process for the Manufacture of GaAs Power MESFET's / E. Y. Chang, Y.-L. Lai and Y. S. Lee -- Single Wafer Polymer Removal for <0.25mm Technology / E. Gaulhofer, H.-J. Kruwinus and F. Kovacs / [et al.] -- An Industrial Perspective of Recent Developments in Compound Semiconductors / I. Ferguson, A. Thompson and C. Tran / [et al.] -- InP/InGaAs Heterostructure Bipolar Transistors Using a Patterned Subcollector / R. Hamm, R. Ryan and C. Pinzone / [et al.] -- Effect of High-Voltage HBT Collector Design on ft and fmax / P. C. Chang, A. Baca and C. I. H. Ashby / [et al.] --
• InGaAs/InP DHBT Structures for High Speed Circuit Applications / R. F. Kopf, R. A. Hamm and R. W. Ryan / [et al.] -- InP Heterojunction Bipolar Transistor Technology for Fiber Optic Communication Circuits / R. Pullela, J. P. Mattia and G. Georgiou / [et al.] -- Investigation of Process Related Reliability for InP-Based HBTs / K. Kiziloglu, S. Thomas III and B. M. Paine / [et al.] -- Analysis of Two Degradation Mechanisms in GaInP/GaAs Fully Planar HBT Technology / C. Maneux, N. Labat and N. Saysset / [et al.] -- R.F Performances of GaAs HBT's. Thermal Investigations / A. Cazarre, L. Andrieux and A. Marty / [et al.] -- Polycrystal Isolation Technology for High-Speed GaAs HBT-IC's / K. Mochizuki, T. Oka and K. Ouchi -- Compound Semiconductor Devices for Low-Power High-Efficiency Radio Frequency Electronics / V. Hietala, A. Baca and P. C. Chang / [et al.] --
• Submicron InGaAs/InAlAs/InP High-Electron Mobility Transistors for High Speed Lightwave Applications / J. S. Weiner, Y. C. Wang and J. M. Kuo / [et al.] -- 60 GHz InP Power HEMTs with 15 [mu]m x 25 [mu]m Dry-Etched Through-Substrate Vias / R. Grundbacher, E. Sabin and M. Nishimoto / [et al.] -- Effects of Strain Relaxation on the Carrier Transport Properties on InP-based Pseudomorphic High Electron Mobility Structures / R. S. Sandhu, C. D. Moore and M. S. Goorsky / [et al.] -- GaAs Self-Aligned JFETs with Carbon-Doped p[superscript +]Region / A. G. Baca, P.-C. Chang and A. A. Allerman / [et al.] -- AlGaN/GaN MODFETs for High Frequency and High Power Applications / H. Leier, A. Vescan and R. Dietrich / [et al.] -- GaN Metal Oxide Semiconductor Field Effect Transistors / F. Ren, S. J. Pearton and C. R. Abernathy / [et al.] --
• Electrical Characterization of Gallium Nitride MIS Capacitors with An Oxide/Nitride/Oxide Gate Dielectric Synthesized by the Jet Vapor Deposition Technique / B. Gaffey, G. Chong and L. J. Guido / [et al.] -- Electrical Characteristics of Deep-Submicron Vertical SiGe n-MOSFETs / K.-C. Liu, E. J. Quinones and X. Chen / [et al.] -- The Effect Of Er Concentration On the Morphology and Photoluminescence of GaN:Er / M. Overberg, J. Brand and J. D. MacKenzie / [et al.] -- AlGaN and GaN Ultraviolet Photodetectors / R. Hickman, J. M. Van Hove and J. J. Klaassen / [et al.] -- Non-Destructive Evaluation of Light Emitting Efficiency in AlGaInP Double-Heterostructure LED Wafers by Photoluminescence Lifetime / S. Washizuka and Y. Akaike -- Reduction of Surface State Density in H[subscript 2]S Plasma-Treated GaAs / H. Shen, W. Zhou and J. Pamulapati / [et al.] --
• Anodic Growth of GaS Layers on Al[subscript x]Ga[subscript (1-x)]As In (NH[subscript 4])[subscript 2]S Solutions / S. Delalande, J. Nagle and J. Olivier / [et al.] -- Optimized Sulfur Treatment of AlGaAs Surfaces: Application To The Passivation of Dry-etched AlGaAs Laser Facets / J. Olivier, P. Collot and S. Delalande -- Surface Chemical Treatment For The Cleaning of AlN and GaN / K.-N. Lee, S. M. Donovan and B. Gila / [et al.] -- Properties and Applications of a Novel Material System, III-N-V / C. W. Tu.

ISBN

1566772265

LCCN

99061587

OCLC

ocm41293526

Owning Institutions

Columbia University Libraries