Research Catalog

Title

In-plane semiconductor lasers : from ultraviolet to mid-infrared II : 26-28 January 1998, San Jose, California / Hong K. Choi, Peter S. Zory, chairs/editors ; sponsored ... by SPIE--the International Society for Optical Engineering.

Publication

Bellingham, Wash., USA : SPIE, [1998], ©1998.

Items in the Library & Off-site

Holdings

Details

Additional Authors

• Choi, Hong Kyun.
• Zory, Peter S., 1936-
• Society of Photo-optical Instrumentation Engineers.

Description

x, 334 pages : illustrations; 28 cm.

Series Statement

SPIE proceedings series ; v. 3284

Uniform Title

Proceedings of SPIE--the International Society for Optical Engineering ; v. 3284.

Subjects

• High power lasers > Congresses
• Semiconductor lasers > Congresses

Bibliography (note)

• Includes bibliographical references and index.

Contents

• High-power Al-free active-region diode lasers / L. J. Mawst, J. K. Wade and A. Al-Muhanna -- High-power diode lasers grown by solid-source MBE / M. Pessa, M. U. Jalonen and A. Salokatve -- Reliability aspects of 980-nm pump lasers in EDFA applications / A. Oosenbrug -- Determination of carrier lifetimes using Hakki-Paoli gain data / A. P. Ongstad, G. C. Dente and M. L. Tilton -- Modulated-cap thin p-clad antiguided array lasers / J. S. O., P. S. Zory and C. F. Miester -- Surface-emitting complex-coupled second-order distributed-feedback lasers for high-power applications / J. G. Lopez, M. Kasraian and D. Botez -- High-power 1.5-[mu]m tapered-gain-region lasers / J. P. Donnelly, J. N. Walpole and S. H. Groves -- Beam quality in multiwatt semiconductor amplifiers / D. J. Bossert, G. C. Dente and M. L. Tilton -- Improved beam quality for high-power tapered laser diodes with LMG (low-modal-gain) epitaxial layer structures / M. Mikulla, A. Schmitt and P. Chazan --
• InGaN/GaN lasers grown on SiC / K. Doverspike, G. E. Bulman and S. T. Sheppard -- Characterization of AIGaInN heterostructures and laser diodes / D. P. Bour, M. Kneissl and N. M. Johnson -- Pulsed operation of (AI,Ga,In)N blue laser diodes / A. C. Abare, M. P. Mack and M. W. Hansen -- Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition / M. Razeghi, A. Saxler and P. Kung -- InGaN/GaN double heterostructure laser with cleaved facets / D. Stocker, E. F. Schubert and W. Grieshaber -- Real-index-guided AIGaInP red laser with high-power characteristics grown by one-step MOVPE / C. Anayama, A. Furuya and T. Tanahashi -- Gain-current relation in CdZnSe single quantum well lasers: modeling and experiment / C.-F. Hsu, P. S. Zory and M. A. Haase -- Modeling of gain for lasers based on CdSe planar QD system in ZnMgSSe matrix / A. D. Andreev --
• 1.3-[mu]m InP-based n-type modulation-doped strained multiquantum well lasers for high-density parallel optical interconnections / K. Nakahara, T. Tsuchiya and A. Niwa -- 1.3-[mu]m InAsP/InAIGaAs MQW lasers for high-temperature operation / T. Anan, M. Yamada and K. Tokutome -- High-performance uncooled MQW DFB lasers at 1.3 [mu]m for OC-12 transmitter modules / J. K. Kang, K. S. Oh and S. J. Jeong -- III-N-V: a novel material system for lasers with good high-temperature characteristics / C. W. Tu, W. G. Bi and H. P. Xin -- GaInNAs/GaAs long-wavelength lasers / M. Kondow, T. Kitatani and M. C. Larson -- AIGaInAs/InP ridge-guide lasers operating at 1.55 [mu]m / G. A. Evans, J. P. Sih and T. M. Chou -- Mid-IR intersubband quantum cascade lasers / C. Sirtori, F. Capasso and J. Faist -- Long-wavelength (15.5-[mu]m) quantum fountain intersubband laser InGaAs/AlGaAs quantum wells / O. Gauthier-Lafaye, F. H. Julien and P. Boucaud --
• Buried heterostructure quantum cascade lasers / M. Beck, J. Faist and C. G. Gmachl -- High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum well diode lasers emitting at 2 [mu]m / R. J. Menna, D. Z. Garbuzov and H. Lee -- Mid-infrared GaSb-InAs-based multiple quantum well lasers / A. N. Baranov, N. Bertru and Y. Cuminal -- Gain and threshold current density characteristics of 2-[mu]m GaInAsSb/AIGaAsSb MQW lasers with increased valence band offset / T. C. Newell, L. F. Lester and X. Wu -- Low-threshold high-power high-brightness GaInAsSb/AIGaAsSb quantum well lasers emitting at 2.05 [mu]m / H. K. Choi, G. W. Turner and J. N. Walpole -- Efficiency and power issues in Sb-based mid-infrared lasers / H. Q. Le, G. W. Turner and J. R. Ochoa -- High-power optically pumped type-II quantum well lasers / D. L. McDaniel, Jr., C. E. Moeller and M. Falcon -- Mid-IR type-II diode lasers / W. W. Bewley, I. Vurgaftman and C. L. Felix --
• Type-II quantum cascade lasers / R. Q. Yang, C.-H. Lin and B. H. Yang -- Mid-infrared interband cascade emission in InAs/GaInSb/AISb type-II heterostructures / H. C. Liu, E. Dupont and J. P. McCaffrey -- Inapplicability of a simply parameterized threshold current in Sb-based IR lasers / C. H. Grein, M. E. Flatte and H. Ehrenreich.

ISBN

0819427233

LCCN

98171715

OCLC

• 39100766
• SCSB-3837705

Owning Institutions

Columbia University Libraries