Research Catalog

Title

Stress-induced phenomena in metallization : Sixth International Workshop on Stress-Induced Phenomena in Metallization, Ithaca, New York, 25-27 July 2001 / editors, Shefford P. Baker [and others].

Author

International Workshop on Stress-Induced Phenomena in Metallization (6th : 2001 : Ithaca, N.Y.)

Publication

Melville, N.Y. : American Institute of Physics, 2002.

Items in the Library & Off-site

Holdings

Details

Additional Authors

Baker, Shefford P.

Description

ix, 250 pages : illustrations; 25 cm.

Series Statement

AIP conference proceedings, 0094-243X ; v. 612

Uniform Title

AIP conference proceedings ; no. 612.

Subjects

• Thin film devices > Defects > Congresses
• Semiconductors > Defects > Congresses
• Aluminum films > Congresses
• Metallizing > Congresses
• Metallic films > Congresses

Bibliography (note)

• Includes bibliographical references and indexes.

Contents

• Electromigration in the Nineties / J. R. Lloyd -- Electromigration in Epitaxial Cu(001) Lines / G. Ramanath, H. Kim and H. S. Goindi / [et al.] -- Immortality of Cu Damascene Interconnects / S. P. Hau-Riege -- The Electromigration Short-Length Effect in AlCu and Cu Interconnects / R. G. Filippi, P.-C. Wang and R. A. Wachnik / [et al.] -- A High Reliability Copper Dual-Damascene Interconnection with Direct-Contact Via Structure / K. Ueno, M. Suzuki and A. Matsumoto / [et al.] -- Statistical Study of Electromigration Early Failures in Dual-damascene Cu/oxide Interconnects / K.-D. Lee, E. T. Ogawa and H. Matsuhashi / [et al.] -- A Governing Parameter for Electromigration Damage in Passivated Polycrystalline Lines and its Verification / K. Sasagawa, M. Hasegawa and M. Saka / [et al.] -- Influence of Grain Boundary Type on Electromigration in Damascene Copper Lines / H. Wendrock, S. Menzel and T. G. Koetter / [et al.] --
• Evaluation of Temperature Rise Due to Joule Heating and Preliminary Investigation of its Effect on Electromigration Reliability / S. Shingubara, S. Miyazaki and H. Sakaue / [et al.] -- First-Principle Theoretical Study on the Dynamical Electronic Characteristics of Electromigration in the Bulk, Surface and Grain Boundary / A. Tachibana -- Interconnect Failure due to Cyclic Loading / R. R. Keller, R. Monig and C. A. Volkert / [et al.] -- Damaging of Metallization Layers by High Power Surface Acoustic Wave Fields / S. Menzel, H. Schmidt and M. Weihnacht / [et al.] -- Cohesive Zone Models of Void Nucleation at Interconnect Interfaces / A. F. Bower -- Stress-Induced Voiding in Aluminum and Copper Interconnects / M. Hommel, A. H. Fischer and A. v. Glasow / [et al.] -- A Relationship between Film Texture and Stress-Voiding Tendency in Copper Thin Films / J. Koike, A. Sekiguchi and M. Wada / [et al.] -- Stress Voiding in Wide Copper Lines / T. M. Shaw, L. Gignac and X.-H. Liu / [et al.] --
• Evaluation of Interface Strength between Thin Films in an LSI Based on Fracture Mechanics Concept / T. Shibutani, Q. Yu and M. Shiratori / [et al.] -- Microdiffraction and Microfluorescence Studies of Electromigration-Induced Stresses and Composition Changes / G. S. Cargill III -- Dominant Inelastic Mechanisms in FCC Metallic Thin Films and Lines / M. J. Kobrinsky and C. V. Thompson -- High Resolution Microdiffraction Studies Using Synchrotron Radiation / R. Spolenak, N. Tamura and B. C. Valek / [et al.] -- Grain Structure Evolution During Annealing of Electroplated Copper / S. H. Brongersma, E. Kerr and I. Vervoort / [et al.] -- Stress Induced Metallurgical Effects in Ti/TiN/AlCu/TiN Metal Stacks / K. Koller, M. Hommel and S. Hummelt / [et al.].

ISBN

073540058X

LCCN

2002102851

OCLC

• ocm49723827
• SCSB-4284881

Owning Institutions

Columbia University Libraries