Research Catalog
The piezojunction effect in silicon integrated circuits and sensors
- Title
- The piezojunction effect in silicon integrated circuits and sensors / by Fabiano Fruett and Gerard C.M. Meijer.
- Author
- Fruett, Fabiano.
- Publication
- Boston : Kluwer Academic Publishers, [2002], ©2002.
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Status | Format | Access | Call Number | Item Location |
---|---|---|---|---|
Text | Request in advance | TK7872.P54 F74 2002 | Off-site |
Holdings
Details
- Additional Authors
- Meijer, G. C. M. (Gerard C. M.)
- Description
- xii, 161 pages : illustrations; 25 cm.
- Series Statement
- The Kluwer international series in engineering and computer science ; SECS 682. Analog circuits and signal processing
- Uniform Title
- Kluwer international series in engineering and computer science ; SECS 682.
- Kluwer international series in engineering and computer science. Analog circuits and signal processing.
- Subjects
- Bibliography (note)
- Includes bibliographical references and index.
- Contents
- 1. Introduction. 1.1. Previous research on the piezojunction effect. 1.2. Mechanical stress and its influence in accuracy. 1.3. New stress-sensing circuits. 1.4. Motivation and objectives. 1.5. Book structure -- 2. Mechanical stress in integrated circuits. 2.1. Introduction. 2.2. Mechanical properties of crystalline silicon. 2.3. Mechanical stress. 2.4. Strain. 2.5. Silicon crystal orientation. 2.6. Elastic properties of silicon. 2.7. Origin of mechanical stress in a silicon die. 2.8. Mechanical stress conditions to characterize microelectronic circuits -- 3. Piezo effects in silicon. 3.1. Introduction. 3.2. An overview about the piezo effects in silicon. 3.3. Review of the piezoresistive theory of silicon. 3.4. Piezojunction effect -- 4. Characterization of the piezojunction effect. 4.1. Introduction. 4.2. Vertical transistors. 4.3. Lateral transistors. 4.4. Summary of the piezojunction coefficients --
- 5. Minimizing the piezojunction and piezoresistive effects in integrated devices. 5.1. Introduction. 5.2. Vertical transistors. 5.3. Lateral transistors. 5.4. Resistors -- 6. Minimizing the inaccuracy in packaged integrated circuits. 6.1. Introduction. 6.2. Translinear circuits. 6.3. Translinear circuits with resistors. 6.4. Bandgap references and temperature transducers -- 7. Stress-sensing elements based on the piezojunction effect. 7.1. Introduction. 7.2. Stress-sensing elements based on the piezoresistive effect. 7.3. Stress-sensing elements based on the piezojunction effect. 7.4. Comparison between the piezojunction effect and the piezoresistive effect for stress-sensing applications. 7.5. Maximizing the piezojunction effect in L-PNP transistors. 7.6. Stress-sensing element based on the L-PNP current mirror -- 8. Conclusions -- App. A. Transformation of coordinate system -- App. B. Stress calculations based on the cantilever technique --
- App. C. Transformation of coordinate system for the second-order piezoresistive coefficients -- App. D. MatLab program used to calculate the stress-induced change in V[subscript BE] and V[subscript ref].
- ISBN
- 1402070535 (alk. paper)
- LCCN
- 2002069518
- OCLC
- ocm49860163
- SCSB-4318510
- Owning Institutions
- Columbia University Libraries