Research Catalog

The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon

Title
The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon / Sheng S. Li, Department of Electrical Engineering, University of Florida.
Author
Li, Sheng S., 1938-
Publication
[Washington] : Department of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1979.

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Details

Additional Authors
  • United States. National Bureau of Standards.
  • University of Florida. Department of Electrical Engineering.
  • United States. Advanced Research Projects Agency.
  • National Science Foundation (U.S.)
Series Statement
  • Semiconductor measurement technology
  • NBS special publication ; 400-47
Uniform Title
  • Semiconductor measurement technology.
  • NBS special publication ; 400-47.
Subject
  • Holes (Electron deficiencies)
  • Semiconductor doping
  • Silicon > Defects
Note
  • "This activity was supported by the Defense Advanced Research Projects Agency and the National Science Foundation."
  • CODEN: XNBSAV.
Bibliography (note)
  • Includes bibliographical references.
LCCN
78024185
OCLC
  • ocm04503980
  • SCSB-4354396
Owning Institutions
Columbia University Libraries