Research Catalog

Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication

Title
Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication / D. R. Myers, Electron Devices Division, Center for Electronics and Electronical Engineering, National Engineering Laboratory, National Bureau of Standards.
Author
Meyers, D. R.
Publication
Washington : Department of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt Print. Off., 1980.

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Holdings

Details

Additional Authors
  • Center for Electronics and Electrical Engineering (U.S.). Electron Devices Division.
  • United States. Division of Electric Energy Systems.
  • United States. National Bureau of Standards.
Series Statement
  • Semiconductor measurement technology
  • NBS special publication ; 400-60
Uniform Title
  • Semiconductor measurement technology.
  • NBS special publication ; 400-60.
Subjects
Note
  • Sponsored by Division of Electric Energy Systems, Department of Energy.
  • Issued May 1980.
  • CODEN : XNBSAV
Bibliography (note)
  • Includes bibliographical references.
OCLC
  • ocm06348908
  • SCSB-4354988
Owning Institutions
Columbia University Libraries