Research Catalog

The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon

Title
The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon / W.R. Thurber [and others].
Publication
Washington, D.C. : U.S. Department of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., 1981.

Items in the Library & Off-site

Filter by

1 Item

StatusFormatAccessCall NumberItem Location
Request for On-site UseRequest Scan
How do I pick up this item and when will it be ready?
TextRequest in advance C 13.10:400-64Off-site

Holdings

Details

Additional Authors
  • Thurber, W. Robert.
  • United States. National Bureau of Standards.
  • Center for Applied Mathematics (U.S.). Statistical Engineering Division.
  • United States. Defense Advanced Research Projects Agency.
  • Center for Electronics and Electrical Engineering (U.S.). Electron Devices Division.
Series Statement
  • Semiconductor measurement technology
  • NBS special publication ; 400-64
Uniform Title
  • Semiconductor measurement technology.
  • NBS special publication ; 400-64.
Subjects
Note
  • "Electron Devices Division, Center for Electronics and Electrical Engineering, National Engineering Laboratory, National Bureau of Standards."
  • "Statistical Engineering Division, Center for Applied Mathematics, National Engineering Laboratory, National Bureau of Standards."
  • "This activity was supported by Defense Advanced Research Projects Agency and National Bureau of Standards."
  • "Issued May 1981."
Bibliography (note)
  • Includes bibliographical references.
LCCN
81600052
OCLC
  • ocm07632573
  • SCSB-4356356
Owning Institutions
Columbia University Libraries