Research Catalog

Title

Novel materials and processes for advanced CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A. / editors, Mark I. Gardner [and others].

Author

Symposium N, "Novel Materials and Processes for Advanced CMOS" (2002 : Boston, Mass.) http://id.loc.gov/authorities/names/n2005020779

Publication

Warrendale, Pa. : Materials Research Society, [2003], ©2003.

Items in the Library & Off-site

Details

Additional Authors

• Gardner, Mark I.
• Materials Research Society. http://id.loc.gov/authorities/names/n79060208

Description

xiii, 384 pages : illustrations; 24 cm.

Series Statement

Materials Research Society symposium proceedings ; v. 745

Uniform Title

Materials Research Society symposia proceedings ; v. 745.

Subject

• Dielectrics > Congresses
• Gate array circuits > Materials > Congresses
• Metal oxide semiconductors > Materials > Congresses
• Metal oxide semiconductors, Complementary > Materials > Congresses
• Nanostructured materials > Congresses

Note

• "Papers presented at Symposium N, "Novel Materials and Processes for Advanced CMOS," held ... at the 2002 MRS Fall Meeting"--P. xiii.

Bibliography (note)

• Includes bibliographical references and indexes.

Contents

• Atomic Structure, Band Offsets and Hydrogen in High-k Oxide-Silicon Interfaces / J. Robertson and P. W. Peacock -- Oxygen Vacancy Defects in Tantalum Pentoxide: A Density Functional Study / R. Ramprasad, Michael Sadd, Doug Roberts, Tom Remmel, Mark Raymond, Eric Luckowski, Sriram Kalpat, Carole Barron and Mel Miller -- High-k Gate Dielectrics for Si and Compound Semiconductors by Molecular Beam Epitaxy / J. Raynien Kwo and Minghwei Hong -- Physical and Electrical Characterization of Hafnium Silicate Thin Films / Patrick S. Lysaght, Brendan Foran, Gennadi Bersuker, Larry Larson, Robert W. Murto and Howard R. Huff -- Dynamic Growth Mechanism and Interface Structure of Crystalline Zirconia on Silicon / S. J. Wang, A. C. H. Huan and C. K. Ong -- The Influence of Defects on Compatibility and Yield of the HfO[subscript 2]-PolySilicon Gate Stack for CMOS Integration / V. S. Kaushik, S. De Gendt, R. Carter, M. Claes, E. Rohr, L. Pantisano, J. Kluth, A. Kerber, V. Cosnier, E. Cartier, W. Tsai, E. Young, M. Green, J. Chen, S.-A. Jang, S. Lin, A. Delabie, S. V. Elshocht, Y. Manabe, O. Richard, C. Zhao, H. Bender, M. Caymax and M. Heyns -- Improvement of Capacitance-Voltage (C-V) Characteristics of YSZ/Si(001) and ZrO[subscript 2]/Si Thin Film by Nb-Doping / Naoki Wakiya, Tomohiko Moriya, Kazuo Shinozaki and Nobuyasu Mizutani -- A Study of Al[subscript 2]O[subscript 3]:C Films on Si(100) Grown by Low Pressure MOCVD / M. P. Singh, C. S. Thakur, N. Bhat and S. A. Shivashankar -- Conduction Mechanisms in SrTiO[subscript 3] Thin Films on Silicon / Bogdan Mereu, George Sarau and Marin Alexe -- HRTEM Investigation of Effect of Various Rare Earth Oxide Dopants on Epitaxial Zirconia High-k Gate Dielectrics / Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki and Nobuyasu Mizutani -- Structural Quality and Electrical Behavior of Epitaxial High-k Y[subscript 2]O[subscript 3]/Si(001) / G. Vellianitis, G. Apostolopoulos, A. Dimoulas, K. Argyropoulos, B. Mereu, R. Scholz, M. Alexe and J. C. Hooker -- Study of Interface Formation of (Ba,Sr)TiO[subscript 3] Thin Films Grown by RF Sputter Deposition on Bare Si and Thermal SiO[subscript 2]/Si Substrates / N. A. Suvorova, A. H. Mueller, A. A. Suvorova, M. Saunders and E. A. Irene.
• Materials Research Society Symposium Proceedings -- Thermal Analyses of Bulk Amorphous Oxides and Silicates of Zirconium and Hafnium / S. V. Ushakov, C. E. Brown, A. Navrotsky, A. Demkov, C. Wang and B.-Y. Nguyen -- Thermal Stability of High-k Layers / C. Zhao, V. Cosnier, P. J. Chen, O. Richard, G. Roebben, J. Maes, S. Van Elshocht, H. Bender, E. Young, O. Van Der Biest, M. Caymax, W. Vandervorst, S. De Gendt and M. Heyns -- Screening the High-k Layer Quality by Means of Open Circuit Potential Analysis and Wet Chemical Etching / Martine Claes, Stefan De Gendt, Thomas Witters, Vidya Kaushik, Jerry Chen, Thierry Conard, Annelies Delabie, Sven Van Elshocht and Marc Heyns -- Physical Characterization of Ultrathin High-k Dielectrics / W. Vandervorst, B. Brijs, H. Bender, O. T. Conard, J. Petry, O. Richard, S. Van Elshocht, A. Delabie, M. Caymax and S. De Gendt -- Effect of Al-Content and Post Deposition Annealing on the Electrical Properties of Ultra-Thin HfAl[subscript x]O[subscript y] Layers / R. J. Carter, W. Tsai, E. Young, M. Caymax, J. W. Maes, P. J. Chen, A. Delabie, C. Zhao, S. De Gendt and M. Heyns -- In Situ Spectroscopic Approach to Atomic Layer Deposition / Martin M. Frank, Yves J. Chabal and Glen D. Wilk -- Atomic Layer Deposition of High-k Gate Dielectrics Using MO Precursor and Cyclic Plasma Exposure / Kazuhiko Endo and Toru Tatsumi -- Measuring The Work Functions of PVD TaN, TaSiN and TiSiN Films With a Schottky Diode CV Technique for Metal Gate CMOS Applications / James Pan, Christy Woo, Minh-Van Ngo, Bryan Tracy, Ercan Adem, Stephen Robie, Qi Xiang and Ming-Ren Lin -- Characterization of Ruthenium and Ruthenium Oxide Thin Films Deposited by Chemical Vapor Deposition for CMOS Gate Electrode Applications / Filippos Papadatos, Spyridon Skordas, Steve Consiglio, Alain E. Kaloyeros and Eric Eisenbraum -- X-ray Absorption Studies of High Performance Low-k Dielectric Materials / T. Yoda, H. Miyajima, M. Shimada, R. Nakata and H. Hashimoto -- Wavelength-Invariant Resist Composed of Bimetallic Layers / Y. Tu, M. Karimi, N. Morawej, W. N. Lennard, T. W. Simpson, J. Peng, K. L. Kavanagh and G. H. Chapman -- A Selective Etching Process for Chemically Inert High-k Metal Oxides / Katherine L. Saenger, Harald F. Okorn-Schmidt and Christopher P. D'Emic -- The Effect of SiGe Barriers on the Thermal Stability of Highly B-Doped Si Surface Layers / Phillip E. Thompson, Joe Bennett, Robert Crosby and Mark E. Twigg -- 2D Dopant Profiling for Advanced Process Control / Xiang-Dong Wang, Qianghua Xie, Joe Hooker, Shifeng Lu, J. J. Lee, Phil Tobin, Wei Liu and Linda Cross -- SiGe pMOSFETs Fabricated on Limited Area SiGe Virtual Substrates / Andrew Waite, Urs Straube, Neil Lloyd, Sally Croucher, Yue Teng Tang, Bifeng Rong, Alan Evans, Tim Grasby, Terry Whall and Evan Parker -- Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions / Gianni Taraschi, Arthur J. Pitera, Lisa M. McGill, Zhi-Yuan Cheng, Minjoo L. Lee, Thomas A. Langdo and Eugene A. Fitzgerald -- Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers / Erik Haralson, Tobias Jarmar, Johan Seger, Henry H. Radamson, Shi-Li Zhang and Mikael Ostling -- Formation of Ni Mono-Germanosilicide on Heavily B-Doped Epitaxial SiGe for Ultra-Shallow Source/Drain Contacts / Christian Isheden, Johan Seger, Henry H. Radamson, Shi-Li Zhang and Mikael Ostling -- Phase Formation in Ti(Ta)-Ni and Co-Ti Films Deposited on (001)Si in N[subscript 2] Atmospheres / A. L. Vasiliev, M. Aindow, A. G. Vasiliev, I. A. Horin and A. A. Orlikovsky -- Nickel, Platinum and Zirconium Germanosilicide Contacts to Heavily Phosphorous Doped Silicon-Germanium Alloys for Advanced CMOS Source/Drain Junctions / Hongxiang Mo, Jing Liu and Mehmet C. Ozturk -- Kinetics of Agglomeration of NiSi and NiSi[subscript 2] Phase Formation / C. Detavernier, A. Ozcan, C. Lavoie, Jean-Jordan Sweet and J. M. E. Harper -- Effect of Post-Metallization Hydrogen Annealing on C-V Characteristic of Ziroconia Grown Using Atomic Layer Deposition / Arpan Chakraborty, Anil U. Mane, S. A. Shivashankar and V. Venkataraman -- Physical-Chemical Evolution Upon Thermal Treatments of Al[subscript 2]O[subscript 3], HfO[subscript 2] and Al/Hf Composite Materials Deposited by ALCVD / B. Crivelli, M. Alessandri, S. Alberici, F. Cazzaniga, D. Dekadjevi, J. W. Maes, G. Ottaviani, G. Pavia, G. Queirolo, S. Santucci and F. Zanderigo -- Physical and Electrical Properties of Al[subscript 2]O[subscript 3], HfO[subscript 2], and Their Alloy Films Prepared by Atomic Layer Deposition for 65nm CMOS Gate Dielectric / Takaaki Kawahara, Kazuyoshi Torii, Seiichi Fukuda, Takeshi Maeda, Atsushi Horiuchi, Hiroyuki Ito, Akiyoshi Muto, Yoshitake Kato and Hiroshi Kitajima -- Ultrathin Zirconium Dioxide Chemically Deposited at a Low Thermal Budget / Stefan Harasek, Heinz D. Wanzenboeck, Helmut Langfischer and Emmerich Bertagnolli -- Oriented Growth of Thin Films of Samarium Oxide by MOCVD / K. Shalini and S. A. Shivashankar -- MOCVD of HfO[subscript 2] from Alkoxide and Alkylamide Precursors / John L. Roberts, Paul A. Williams, Anthony C. Jones, Paul Marshall, Paul R. Chalker, Jamie F. Bickley, Hywel O. Davies and Lesley M. Smith -- ALD HfO[subscript 2] Surface Preparation Study / Annelies Delabie, M. Caymax, J. W. Maes, P. Bajolet, B. Brijs, E. Cartier, T. Conard, S. De Gendt, O. Richard, W. Vandervorst, C. Zhao, M. Green, W. Tsai and M. M. Heyns -- A New Approach for Metal Oxide Film Growth: Vapor-Liquid Hybrid Deposition (VALID) / Tetsuji Yasuda and Ronald Kuse -- Effect of Nature of the Precursor on Crystallinity and Microstructure of MOCVD-Grown ZrO[subscript 2] Thin Films / M. S. Dharmaprakash and S. A. Shivashankar -- Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon / S. Van Elshocht, M. Caymax, S. De Gendt, T. Conard, J. Petry, M. Claes, T. Witters, C. Zhao, B. Brijs, O. Richard, H. Bender, W. Vandervorst, R. Carter, J. Kluth, L. Date, D. Pique and M. M. Heyns -- Electrical and Structural Characterization of HfO[subscript 2] MIM Capacitors / Fan Yang, David E. Kotecki, George Bernhardt and Michael Call -- Interface Quality and Electrical Performance of Low-Temperature Metal Organic Chemical Vapor Deposition Aluminum Oxide Thin Films for Advanced CMOS Gate Dielectric Applications / Spyridon Skordas, Filippos Papadatos, Steven Consiglio, Eric Eisenbraun and Alain Kaloyeros -- Trap Spectroscopy in Si[subscript 3]N[subscript 4] Ultrathin Films Using Exoelectron Emission Method / M. Naich, G. Rosenman, M. Molotskii and Ya. Roizin -- Effectiveness of Plasma Nitrided Silicon Oxynitride as a Barrier Layer Between High-k Materials and Si Substrates / Yi-Sheng Lai and J. S. Chen -- Advanced PECVD-Based Anti-Reflective Coating for 90nm Generation Interconnects / Sang H. Ahn, Miguel Fung, Keebum Jung, Lei Zhu, Chris Bencher, B. H. Kim and Hichem M'Saad -- Characteristics of Ultra Shallow B Implantation With Decaborane / Cheng Li, Maria A. Albano, Leszek Gladczuk and Marek Sosnowski -- Influence of Substrate Temperature During Sputter Deposition on the Subsequent Formation of Titanium Disilicide / A. S. Ozcan, K. F. Ludwig, Jr., C. Cabral, Jr., C. Lavoie and J. M. E. Harper -- Low Thermal Budget NiSi Films on SiGe Alloys / S. K. Ray, T. N. Adam, G. S. Kar, C. P. Swann and J. Kolodzey -- Ultrashallow SIMS Study of Implanted Dopants in NiSi/Si(100) / Nikolai L. Yakovlev, Andrew S. W. Wong, Doreen M. Y. Lai and Dongzhi Chi -- Growth Temperature Effects on Deep-Levels in Si Grown by Low Temperature Molecular Beam Epitaxy / Sung-Yong Chung, Paul R. Berger, Z.-Q. Fang and Phillip E. Thompson -- Copper Diffusion Characteristics in Single Crystal and Polycrystalline TaN / H. Wang, Ashutosh Tiwari, X. Zhang, A. Kvit and J. Narayan -- First Principles Modeling of High-k Dielectric Materials / Gyuchang Jun and Kyeongjae Cho -- First-Principles Study of Electronic and Dielectric Properties of ZrO[subscript 2] and HfO[subscript 2] / Xinyuan Zhao and David Vanderbilt --

ISBN

1558996826

Owning Institutions

Columbia University Libraries