Research Catalog
New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, Claifornia, U.S.A. / editors: Jen-Inn Chyi [and others].
- Title
- New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, Claifornia, U.S.A. / editors: Jen-Inn Chyi [and others].
- Publication
- Warrendale, Pa. : Materials Research Society, [2003], ©2003.
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Text | Request in advance | QC611.8.W53 N48 2003g | Off-site |
Details
- Additional Authors
- Description
- xiii, 430 pages : illustrations; 24 cm.
- Series Statement
- Materials Research Society symposium proceedings ; v. 764
- Uniform Title
- Materials Research Society symposia proceedings ; v. 764.
- Subjects
- Note
- "The papers in this proceedings were presented at Symposium C, 'New Applications for Wide-Bandgap Semiconductors,' held April 22-24 at the 2003 MRS Spring Meeting in San Francisco, Claifornia."--p. xiii.
- Bibliography (note)
- Includes bibliographical references and indexes.
- Contents
- High-Speed Solar-Blind AlGaN Schottky Photodiodes / Necmi Biyikli, Ibrahim Kimukin, Tolga Kartaloglu, Orhan Aytur and Ekmel Ozbay -- First AlGaN Free-Standing Wafers / Yu. V. Melnik, V. A. Soukhoveev, K. V. Tsvetkov and V. A. Dmitriev -- Structural Properties of Free-Standing 50 mm Diameter GaN Wafers With (1010) Orientation Grown on LiAlO[subscript 2] / Jacek Jasinski, Zuzanna Liliental-Weber, Herbert-Paul Maruska, Bruce H. Chai, David W. Hill, Mitch M. C. Chou, John J. Gallagher and Stephen Brown -- Stimulated Emission at 258 nm in AlN/AlGaN Quantum Wells Grown on Bulk AlN Substrates / R. Gaska, Q. Fareed, G. Tamulaitis, I. Yilmaz, M. S. Shur, C. Chen, J. Yang, E. Kuokstis, A. Khan, J. C. Rojo and L. J. Schowalter -- Surface Acoustic Waves and Guided Optical Waves in AlGaN Films / Gang Bu, Daumantas Ciplys, Michael Shur, Remis Gaska, Qhalid Fareed, Romualdas Rimeika, Jinwei Yang and Asif Khan -- Large Area 6H- and 4H-SiC Photoconductive Switches / S. Dogan, F. Yun, C. B. Roberts, J. Parish, D. Huang, R. E. Myers, M. Smith, S. E. Saddow, B. Ganguly and H. Morkoc -- Investigation of Epitaxial GaN Films by Conductive Atomic Force Microscopy / A. A. Pomarico, D. Huang, J. Dickinson, S. Dogan, A. A. Baski, R. Cingolani, H. Morkoc and R. Molnar -- GaN Epitaxial Growth by Molecular Beam Epitaxy Utilizing AlGaN Buffer Layer With Nanopipes / F. Yun, L. He, M. A. Reshchikov, H. Morkoc, J. Jasinski and Z. Liliental-Weber -- GaN Growth on Si Using ZnO Buffer Layer / K. C. Kim, S. W. Kang, O. Kryliouk, T. J. Anderson, D. Craciun, V. Cracium and R. K. Singh -- Modulation of Energy Band Gap of ZnO Thin Films Grown by Pulsed Laser Deposition / Sang Yeol Lee, Yuan Li, Jang-Sik Lee, J. K. Lee, M. Nastasi, S. A. Crooker, Q. X. Jia, Hong-Seong Kang and Jeong-Seok Kang -- Cathodoluminescence Study of Gadolinium-Doped Yttrium Oxide Thin Films Deposited By Radio-Frequency Magnetron Sputtering / J. D. Fowlkes, P. D. Rack, R. Bansal and J. M. Fitz-Gerald.
- Materials Research Society Symposium Proceedings -- Silicon Carbide Power Devices and Processing / J. B. Casady, J. R. Bonds, W. A. Draper, J. N. Merrett, I. Sankin, D. Seale and M. S. Mazzola -- Challenges for High Temperature Silicon Carbide Electronics / C.-M. Zetterling, S.-M. Koo, E. Danielsson, W. Liu, S.-K. Lee, M. Domeij, H.-S. Lee and M. Ostling -- Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy / Hai-Ping Liu, In-Gann Chen, Jenq-Dar Tsay, Wen-Yueh Liu, Yih-Der Guo and Jung Tsung Hsu -- AlGaN/GaN Structures Grown by HVPE: Growth and Characterization / M. A. Mastro, D. V. Tsvetkov, A. I. Pechnikov, V. A. Soukhoveev, G. H. Gainer, A. Usikov, V. Dmitriev, B. Luo, F. Ren, K. H. Baik and S. J. Pearton -- HVPE-Grown AlGaN/GaN HEMTs / B. Luo, F. Ren, M. A. Mastro, D. Tsvetkov, A. Pechnikov, V. Soukhoveev, V. Dmitriev, K. H. Baik and S. J. Pearton -- The Effects of Sapphire Surface Treatments and Nitridation on GaN Nucleation Grown Using Hydride Vapor Phase Epitaxy / F. Dwikusuma and T. F. Kuech -- MOCVD Growth of AlN/GaN DBR Structure Under Various Ambient Conditions / H. H. Yao, C. F. Lin and S. C. Wang -- 4H-SiC DMOSFETs for High Frequency Power Switching Applications / Sei-Hyung Ryu, Anant K. Agarwal, James Richmond and John W. Palmour -- Laser Direct-Metallization of Silicon Carbide Without Metal Deposition / I. A. Salama, A. Kar and N. R. Quick -- In Situ SEM Observations and Electrical Measurements During the Annealing of Si/Ni Contacts to SiC / Matthew H. Ervin, Kenneth A. Jones, Michael A. Derenge, Tsvetanka S. Zheleva and Mark C. Wood -- Influence of Indium Incorporation on Recombination Dynamics in AlInGaN Layers Grown by Pulsed Metal Organic Chemical Vapor Deposition / Jae Ho Song, Jhang W. Lee, P. W. Yu, Mee-Yi Ryu, J. Zhang, E. Kuokstis, J. W. Yang and M. Asif Khan -- The Investigation of Preferred Orientation Growth of ZnO Films on the Ceramic Substrates / Sheng-Yuan Chu, Te-Yi Chen, Walter Water and Tung-Yi Huang -- Atomic and Electronic Structure of Boron-Doped Diamond Grain Boundaries Studied by ARHVTEM and Ab Initio Calculation / Hiroyuki Togawa and Hideki Ichinose -- MOCVD Zinc Oxide Films for Wide Bandgap Applications / C. E. Rice, G. S. Tompa, L. G. Provost, N. Sbrockey and J. Cuchiaro -- Effect of Si Layer in the ZnO Thin Films by Pulsed Laser Deposition / Hong Seong Kang, Jeong Seok Kang, Jae Won Kim and Sang Yeol Lee -- Fabrication and Characterizations of ZnO and ZnO:Mn Nanocrystalline Thin Films / Yichun Liu, Dongxu Zhao, X. T. Zhang, Dezhen Shen, D. O. Henderson and R. Mu -- TEM Studies and Contact Resistance of Au/Ni/Ti/Ta/n-GaN Ohmic Contacts / D. N. Zakharov, Z. Liliental-Weber, A. Motayed and S. N. Mohammad -- Cathodoluminescence, Electroluminescence, and Degradation of ZnCdSe Quantum Well Light Emitting Diodes / A. Yu. Nikiforov, G. S. Cargill III, S. P. Guo, M. C. Tamargo and Y.-C. Chen -- Effect of Mn Doping in ZnO Thin Films Deposited by Pulsed Laser Deposition / P. Bhattacharya, Rasmi R. Das, J. Nieves, Yu. I. Yuzyuk and Ram S. Katiyar -- The Refractive Index and Other Properties of Doped ZnO Films / A. L. Cai, J. F. Muth, H. L. Porter, A. Kvit and J. Narayan -- High-Performance AlGaN-Based Visible-Blind Resonant Cavity Enhanced Schottky Photodiodes / Ibrahim Kimukin, Necmi Biyikli, Tolga Kartaloglu, Orhan Aytur and Ekmel Ozbay -- Optical and Structural Investigation of AlN Grown on Sapphire With Reactive MBE Using RF Nitrogen or Ammonia / F. Yun, L. He, F. Xiu, H. Morkoc, S. Bai, Y. Shishkin, R. P. Devaty and W. J. Choyke -- Self-Assembled InP Quantum Dot-TiO[subscript 2] Solid Gratzel Solar Cell / Tingying Zeng, Elizabeth Gladwin and Richard O. Claus -- Statistical Analysis of Micropipe Defect Distributions in Silicon Carbide Crystals / Troy Elkington, Ejiro Emorhokpor, Tom Kerr, John Chen, Kevin Essary, Mike Golab and Richard H. Hopkins -- Barrier Material Improvement in AlGaN/GaN Microwave Transistors Under Gamma Irradiation Treatment / S. A. Vitusevich, M. V. Petrychuk, N. Klein, S. V. Danylyuk, A. E. Belyaev, R. V. Konakova, A. Yu. Avksentyev, A. M. Kurakin, P. M. Lytvyn, B. A. Danilchenko, V. Tilak, J. Smart, A. Vertiatchikh and L. F. Eastman -- Characterization of High Quality Continuous GaN Films Grown on Si-Doped Cracked GaN Template / C. B. Soh, J. Zhang, D. Z. Chi and S. J. Chua -- Structural and Optical Properties of InGaN/GaN Multi-Quantum Well Structures With Different Indium Compositions / Chang-Soo Kim, Sam-Kyu Noh, Kyuhan Lee, Sunwoon Kim and Jay P. Song -- Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior / M. Ahoujja, H. C. Crocket, M. B. Scott, Y. K. Yeo and R. L. Hengehold -- Transient Capacitance Characterization of Deep Levels in Undoped and Si-Doped GaN / S. Nakamura, P. Liu, M. Suhara and T. Okumura -- Modeling of Thermal Conductivity of Polycrystalline GaN Films / D. Kotchetkov and A. A. Balandin -- Influence of Ion Energy on the Reactive Ion Etching Induced Optical Damage of Gallium Nitride / Suk Ing Liem and Roger J. Reeves -- Modeling of Nitride Semiconductor Based Double Heterostructure Tunnel Diodes / M. Moret, S. Ruffenach, O. Briot and R. L. Aulombard -- High Reflectivity AlGaN/GaN Bragg Mirrors Grown by MOCVD for Microcavities Applications / M. Moret, S. Ruffenach, O. Briot, B. Gil and R. L. Aulombard -- Er Doped GaN by Gas Source Molecular Beam Epitaxy on GaN Templates / N. Rousseau, O. Briot, V. Ribes and R. L. Aulombard / RENIBEL network -- ZnO Thin Films Grown at Various Substrate Angles by Pulsed Laser Deposition / Jeong Seok Kang, Hong Seong Kang, Jae Won Kim and Sang Yeol Lee -- Low Ohmic Contact Resistance of GaN by Employing XeCl Excimer Laser / Seung-Chul Lee, Jin-Cherl Her, Sang-Myun Han, Kwang-Seok Seo and Min-Koo Han -- Time of Flight of Drifting Electrons and Holes in Stabilized a-Se film / Dong-Gil Lee, Ji-Koon Park, Jang-Yong Choi, Jae-Hyung Kim and Sang-Hee Nam -- Experimental Evaluation of a-Se Flat-Panel X-ray Detector for Digital Radiography / Jang-Yong Choi, Ji-Koon Park, Dong-Gil Lee, Sang-Sik Kang and Sang-Hee Nam -- Optical and Electrical Characterization of Annealed Silicon-Implanted GaN / H. T. Wang, L. S. Tan and E. F. Chor -- Thermal Boundary Resistance and Heat Diffusion in AlGaN/GaN HFETs / Konstantin A. Filippov and Alexander A. Balandin -- Investigation of Thin Film Growth of B[subscript 12]As[subscript 2] by Chemical Vapor Deposition / R. Nagarajan, J. H. Edgar, J. Pomeroy, M. Kuball and T. Aselage -- Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities as Oxide/GaN Interface / F. Ren, B. Luo, J. Kim, R. Mehandru, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo and Y. Irokawa -- Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures / Mark J. Yannuzzi, Neil A. Moser, Robert C. Fitch, Gregg H. Jessen, James K. Gillespie, Glen D. Via, Antonio Crespo, Thomas J. Jenkins, David C. Look and Donald C. Reynolds -- Solar Blind (Al,Ga)N Metal-Semiconductor-Metal Devices for High Performance Flame Detection / Mauro Mosca, Jean-Luc Reverchon, Nicolas Grandjean, Franck Omnes, Jean-Yves Duboz, Isabelle Ribet and Michel Tauvy -- GaP-Based MIS Capacitors Using a SiN Gate Dielectric / A. Chen, J. Woodall, X. W. Wang and T. P. Ma -- Abnormal Rectifying Characteristics of a Mg Doped GaN Schottky Diode / Jae Wook Kim, Byung Kyu Cho, Jhang Woo Lee and Phil W. Yu -- Analysis of Leakage Currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs) / Ilan Ben-Yaacov, Yee-Kwang Seck, Steven P. DenBaars, Evelyn L. Hu and Umesh K. Mishra -- Electron Injection-Induced Effects in GaN: Physics and Applications / Leonid Chernyak and William Burdett -- Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes / X. A. Cao, S. F. LeBoeuf, J. L. Garrett, A. Ebong, L. B. Rowland and S. D. Arthur --
- ISBN
- 1558997016
- Owning Institutions
- Columbia University Libraries