Research Catalog

Title

Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A / editors: C.R. Abernathy ... [et al.].

Publication

Warrendale, Pa. : Materials Research Society, c2004.

Items in the Library & Off-site

Details

Additional Authors

• Abernathy, C. R.
• Materials Research Society. Meeting (2003 : Boston, Mass.)
• Symposium on Fundamentals of Novel/Oxide Semiconductor Interfaces (2003 : Boston, Mass.)

Description

xiii, 408 p. : ill.; 24 cm.

Series Statement

Materials Research Society symposium proceedings ; v. 786

Uniform Title

Materials Research Society symposia proceedings ; v. 786.

Alternative Title

• Novel oxide/semiconductor interfaces
• Fundamentals of novel/oxide semiconductor interfaces

Subjects

• Integrated circuits > Materials > Congresses
• Semiconductors > Junctions > Congresses
• Metal oxide semiconductors > Junctions > Congresses
• Integrated circuits > Congresses
• Dielectric devices > Congresses

Note

• "This proceedings volume is the record from Symposium E, 'Fundamentals of Novel/Oxide Semiconductor Interfaces,' held December 1-4 at the 2003 MRS Fall Meeting in Boston, Massachusetts ..."--p. xiii.

Bibliography (note)

• Includes bibliographical references and indexes.

Contents

• Study of work function of CVD WSi[subscript x] thin film on high-k dielectric / S. Maitrejean, S. Allegret, F. Fillot, T. Farjot, B. Guillaumot and G. Passemard -- Oxide reduction in advanced metal stacks for microelectronic applications / Wentao Qin, Alex A. Volinsky, Dennis Werho and N. David Theodore -- Long retention performance of a MFIS device achieved by introducing high-k Al[subscript 2]O[subscript 3]/Si[subscript 3]N[subscript 4]Si buffer layer / Yoshihisa Fujisaki, Kunie Iseki and Hiroshi Ishiwara -- Investigation of retention properties for YMnO[subscript 3] based metal/ferroelectric/insulator/semiconductor capacitors / T. Yoshimura, D. Ito, H. Sakata, N. Shigemitsu, K. Haratake, A. Ashida and N. Fujimura -- Characterization of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FETs using (Sr,Sm)[subscript 0.8]Bi[subscript 2.2]Ta[subscript 2]O[subscript 9] (SSBT) thin films / Hirokazu Saiki and Bisuke Tokumitsu -- Selective deposition of C-axis oriented Pb[subscript 5]Ge[subscript 3]O[subscript 11] on the patterned high-k gate oxide by MOCVD processes / Tingkai Li, Sheng Teng Hsu, Bruce Ulrich and Dave Evans -- Determination of nano fluctuations in surface oxides of GaSb with Br-IBAE / K. Krishnaswami, B. Krejca, S. R. Vangala, C. Santeufemio, L. P. Allen, M. Ospina, X. Liu, C. Sung, K. Vaccaro and W. D. Goodhue -- p-Type in ZnO:N by codoping with Cr / E. Kaminska, A. Piotrowska, J. Kossut, R. Butkute, W. Dobrowolski, K. Golaszewska, A. Barcz, R. Jakiela, E. Dynowska, E. Przezdziecka and D. Wawer -- Structural and electrical properties of HfO[subscript 2] films grown by atomic layer deposition on Si, Ge, GaAs and GaN / Marco Fanciulli, Sabina Spiga, Giovanna Scarel, Grazia Tallarida, Claudia Wiemer and Gabriele Seguini -- Microstructure and electrical properties of zinc oxide thin film varistors prepared by RF sputtering / Keng-Ming Chang, Chuan-Pu Liu and Chon-Ming Tsai -- Transparent transistors based on semiconducting oxides / Y. W. Kwon, Y. Li, Y. W. Heo, M. Jones, Vijay Varadarajan, B. S. Jeong, J. Zhou, S. Li, S. L. P. Holloway and D. P. Norton -- Electronic structure of Zn(Mn)O surface alloy - a resonant photoemission study / E. Guziewicz, K. Kopalko, J. Sadowski, M. Guziewicz and Z. Golacki -- Elementary processes during the epitaxial growth of metal oxides : MgO/MgO(001) / Gregory Geneste, Joseph Morillo, Fabio Finocchi and Marc Hayoun -- Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen / J. R. Williams, T. Isaacs-Smith, S. Wang, C. Ahyi, R. M. Lawless, C. C. Tin, S. Dhar, A. Franceschetti, S. T. Pantelides, L. C. Feldman, G. Chung and M. Chisholm -- Hetero-epitaxy of crystalline perovskite oxides on GaAs(001) / Y. Liang, J. Kulik, Y. Wei, T. Eschrich, J. Curless, B. Craigo and S. Smith -- The oxide/nitride interface : a study for gate dielectrics and field passivation / B. P. Gila, B. Luo, J. Kim, R. Mehandru, J. R. LaRoche, A. H. Onstine, E. Lambers, K. Siebein, C. R. Abernathy, F. Ren and S. J. Pearton -- Growth of scandium magnesium oxide on GaN / A. H. Onstine, A. Herrero, B. P. Gila, J. Kim, R. Mehandru, C. R. Abernathy, F. Ren and S. J. Pearton.
• Atomic-scale investigation of the dielectric screening at the interface between silicon and its oxide / Feliciano Giustino and Alfredo Pasquarello -- Ab initio study on the [gamma]-Al[subscript 2]O[subscript 3] surfaces and interfaces / Henry P. Pinto and Simon D. Elliott -- Theoretical analysis of oxygen diffusion in monoclinic HfO[subscript 2] / Minoru Ikeda, Georg Kresse, Toshihide Nabatame and Akira Toriumi -- Bonding and epitaxial relationships at high-k oxide : Si interfaces / J. Robertson and P. W. Peacock -- The band alignment problem at the Si-high-k dielectric interface / A. A. Demkov, L. R. C. Fonseca, J. Tomfohr and O. F. Sankey -- Atomic scale modeling of ZrO[subscript 2] and HfO[subscript 2] atomic layer deposition on silicon : linking density functional theory and kinetic Monte Carlo / A. Esteve, L. Jeloaica, G. Mazaleyrat, A. Dkhissi, M. Djafari Rouhani, A. Ali Messaoud and N. Fazouan -- Point defects in thin HfAlO[subscript x] films probed by monoenergetic positron beams / Akira Uedono, Riichiro Mitsuhashi, Atsushi Horiuchi, Kazuyoshi Torii, Kikuo Yamabe, Keisaku Yamada, Ryouichi Suzuki, Toshiyuki Ohdaira and Tomohisa Mikado -- Electron spin resonance characterization of defects at interfaces in stacks of ultrathin high-k dielectric layers on silicon / A. L. Stesmans and V. V. Afanas'ev -- Influence of nitrogen bonds on electrical properties of HfAlO[subscript x](N) films fabricated through LL-D&A process using NH[subscript 3] / Kunihiko Iwamaoto, Tomoaki Nishimura, Koji Tominaga, Tetsuji Yasuda, Koji Kimoto, Toshihide Nabatame and Akira Toriumi -- Characterization of the electronic structure and optical properties of Al[subscript 2]O[subscript 3], ZrO[subscript 2] and SrTiO[subscript 3] from analysis of reflection electron energy loss spectroscopy in the valence region / G. L. Tan, L. K. Denoyer, R. H. French, A. Ramos, M. Gautier-Soyer and Y. M. Chiang -- Disorder characterization of oxide/silicon interfaces from I-V curves / Louis Nemzer and Fredy R. Zypman -- Conductance transient comparative analysis of ECR-PECVD deposited SiN[subscript x], SiO[subscript 2]/SiN[subscript x] and SiO[subscript x]N[subscript y] dielectric films on silicon substrates / H. Castran, S. Deunas, J. Barbolla, A. Del Prado, E. San Andres, I. Martil and G. Gonzalez-Diaz -- Oxide-semiconductor interface characterization using kelvin probe-AFM in combination with corona-charge deposition / Bert Lagel, Maria D. Ayala, Elena Oborina and Rudy Schlaf -- Characterization of high-k dielectrics by combined spectroscopic ellipsometry (SE) and x-ray reflectometry (XRR) / L. Sun, C. Defranoux, J. L. Stehle, P. Boher, P. Evrard, E. Bellandi and H. Bender -- Precise characterization of silicon on insulator (SOI) and strained silicon on Si[subscript 1-x]Ge[subscript x] on insulator (SSOI) stacks with spectroscopic ellipsometry / Lianchao Sun, Jean-Claude Fouere, Christophe Defranoux, Patrice Heinrich, Christine Dos Reis, Thierry Emeraud, Jean-Philippe Piel and Jean-Louis Stehle -- Electrical characteristics of metal-(La[subscript 0.27]Y[subscript 0.73])[subscript 2]O[subscript 3]-silicon capacitors / E. J. Preisler, N. A. Bojarczuk and S. Guha -- Properties of ultra-thin thermal silicon nitride / Katherine M. Buehheit, Hideki Takeuchi and Tsu-Jae King -- Stability of nitrogen and hydrogen in high-k dielectrics / K. P. Bastos, R. P. Pezzi, L. Miotti, G. V. Soares, C. Driemeier, J. Morais and I. J. R. Baumvol -- Study of HfAlO[subscript x] films deposited by layer-by-layer growth for CMOS high-k gate dielectrics / Akira Toriumi, Toshihide Nabatame and Tsuyoshi Horikawa -- On the interface quality of MIS structures fabricated from atomic layer deposition of HfO[subscript 2], Ta[subscript 2]O[subscript 5] and Nb[subscript 2]O[subscript 5]-Ta[subscript 2]O[subscript 5]-Nb[subscript 2]O[subscript 5] dielectric thin films / S. Duenas, H. Castan, H. Garcia, J. Barbolla, K. Kukli, M. Ritala and M. Leskela -- Crystallinity and wet etch behavior of HfO[subscript 2] films grown by MOCVD / Katherine L. Saenger, Cyril Cabral, Jr., Paul C. Jamison, Edward Preisler and Andrew J. Kellock -- High-k ZrO[subscript 2] gate dielectric on strained-Si / S. Bhattacharya, S. K. Samanta, S. Chatterjee, John McCarthy, B. M. Armstrong, H. S. Gamble, C. K. Maiti, T. Perova and A. Moore -- Silicide formation at HfO[subscript 2]/Si and ZrO[subscript 2]/Si interfaces induced by Ar[superscript +] ion bombardment / Yu. Lebedinskii, A. Zenkevich, D. Filatov, D. Antonov, J. Gushina and G. Maximov -- Field-induced reactions of water molecules at Si-dielectric interfaces / L. Tsetseris, X. Zhou, D. M. Fleetwood, R. D. Schrimpf and S. T. Pantelides -- Optical and dielectric properties of Eu- and Y-polytantalate thin films / Vladimir Vasilyev, Alvin Drehman, Helen Dauplaise, Lionel Bouthillette, Mark Roland, Alex Volinsky, Stefan Zollner and Wentao Qin -- AlON thin films formed by ECR plasma oxidation for high-K gate insulator application / Go Yamanaka, Takafumi Uchikawa, Shun-ichiro Ohmi and Tetsushi Sakai -- Substrate/oxide interface interaction in LaAlO[subscript 3]/Si structures / T. Busani and R. A. B. Devine -- Silicate interface formation during the deposition of Y[subscript 2]O[subscript 3] on Si / C. Durand, C. Vallee, C. Dubourdieu, M. Bonvalot, E. Gautier and O. Joubert -- Atomic layer deposition of sillca and group IV metal oxides nanolaminates / Lijuan Zhong, Fang Chen, Stephen A. Campbell and Wayne L. Gladfelter -- Improved structural properties of sputtered hafnium dioxide on silicon and silicon oxide for semiconductor and sensor applications / H. Gruger, Ch. Kunath, P. Kurth, W. Pufe and S. Sorge -- Fabrication of SrRuO[subscript 3] epitaxial thin films on YBa[subscript 2]Cu[subscript 3]O[subscript x]/CeO[subscript 3]/YSZ-buffered Si substrates by pulsed laser deposition / Takamitsu Higuchi, Koichi Morozumi, Setsuya Iwashita, Masaya Ishida and Talsuya Shimoda -- Growth of perovskites with crystalline interfaces on Si(100) / G. J. Norga, A. Guiller, C. Marchiori, J. P. Locquet, H. Siegwart, D. Halley, C. Rossel, D. Caimi, J. W. Seo and J. Fompeyrine -- Low-temperature growth of HfO[subscript 2] dielectric layers by plasma-enhanced CVD / M. Losurdo, M. M. Giangregorio, M. Luchena, P. Capezzuto, G. Bruno, D. Barreca, A. Gasparotto and E. Tondello -- Liquid injection MOCVD of rare-earth oxides using new alkoxide precursors / Paul A. Williams, Anthony C. Jones, Helen C. Aspinall, Jeffrey M. Gaskell, Paul R. Chalker, Paul A. Marshall, Yim F. Loo and Lesley M. Smith -- Ultra shallow incorporation of nitrogen into gate dielectrics by pulse time modulated plasma / Seiichi Fukuda, Yoshimune Suzuki, Tomoyuki Hirano, Takayoshi Kato, Akihide Kashiwagi, Masaki Saito, Shingo Kadomura, Youichi Minemura and Seiji Samukawa -- Thermally grown and reoxidized nitrides as alternative gate dielectrics / Alexandra Ludsteck, Waltraud Dietl, Hinyiu Chung, Joerg Schulze, Zsolt Nenyei and Ignaz Eisele -- On the thermal re-oxidation of silicon oxynitride / Arturo Morales-Acevedo and G. Francisco Perez-Sanchez -- Study of metal gate work function modulation using plasma and SiH[subscript 4] treated TiN thin films / F. Fillot, S. Maitrejean, T. Farjot, B. Guillaumot, B. Chenevier and G. Passemard -- Structural comparisons of SiO[subscript x] and Si/SiO[subscript x] formed by passivation of single-crystal silicon by atomic and molecular oxygen / Maja Kisa, Ray D. Twesten and Judith C. Yang -- Nitrided hafnium silicate film formation by sequential process using a hot wall batch system and its application to MOS transistor / Tomonori Aoyama, Kazuyoshi Torii, Riichirou Mitsuhashi, Takeshi Maeda, Satoshi Kamiyama, Atsushi Horiuchi, Hiroshi Kitajima and Tsunetoshi Arikado -- Flat-band voltage shift of MOS capacitors with tantalum nitride gate electrodes induced by post metallization annealing / M. Kadoshima, K. Yamamoto, H. Fujiwara, K. Akiyama, K. Tominaga, N. Yamagishi, K. Iwamoto, M. Ohno, T. Yasuda, T. Nabatame and A. Toriumi --

ISBN

1558997245

OCLC

• ocm54900259
• SCSB-4881715

Owning Institutions

Columbia University Libraries