Research Catalog

Title

Progress in compound semiconductor materials III--electronic and optoelectronic applications : symposium held December 1-4, 2003, Boston, Massachusetts / editors: Daniel J. Friedman [and others].

Publication

Warrendale, Pa. : Materials Research Society, [2004], ©2004.

Items in the Library & Off-site

Details

Additional Authors

• Friedman, Daniel J.
• Materials Research Society. Fall Meeting (2003 : Boston, Mass.)
• Symposium on Progress in Compound Semiconductor Materials--Electronic and Optoelectronic Applications (3rd : 2003 : Boston, Mass.)

Description

xiii, 398 pages : illustrations; 24 cm.

Series Statement

Materials Research Society symposium proceedings ; vol. 799

Uniform Title

Materials Research Society symposia proceedings ; v. 799.

Subject

• Compound semiconductors > Design and construction > Congresses
• Electrooptics > Congresses

Note

• "The proceedings contains papers presented at Symposium Z, 'Progress in Compound Semiconductor Materials III--Electronic and Optoelectronic Applications,' held December 1-4 at the 2003 MRS Fall Meeting in Boston, Massachusetts."--p. xiii.

Bibliography (note)

• Includes bibliographical references and indexes.

Contents

• Synthesis of aligned ZnO hexagonal nanorods and its application to ZnS based DC electroluminescent devices / Takashi Hirate, Hironori Tanaka, Shinya Sasaki, Makoto Ozawa, Weichi Li and Tomomass Satoh -- Polarization spectroscopy of charged single self-assembled quantum dots / Morgan E. Ware, Allan Bracker, Daniel Gammon and David Gershoni -- Growth structure and optical properties of III-nitride quantum dots / Hadis Morkoc, Arup Neogi and Martin Kuball -- Diffuse X-ray scattering from InGaAs/GaAS quantum dots / Rolf Kohler, Daniil Grigoriev, Michael Hanke, Martin Schmidbauer, Peter Schafer, Stanislav Besedin, Udo W. Pohl, Roman L. Sellin, Dieter Bimberg, Nikolai D. Zakharov and Peter Werner -- Near-field magneto-photoluminescence of singe self-organized quantum dots / A. M. Mintairov, A. S. Vlasov and J. L. Merz -- Quantum dot lasers and amplifiers / Udo W. Pohl and Dieter Bimberg -- 1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures / V. M. Ustinov, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, A. P. Vasil'ev, E. V. Nikitina, E. S. Semenova, N. V. Kryzhanovskaya, Yu. G. Musikhin, Yu. M. Shernyakov, M. V. Maximov, N. N. Ledentsov, D. Bimberg and Zh. I. Alferov -- Nanoengineered quantum dot active medium for thermally-stable laser diodes / V. Tokranov, M. Yakimov, A. Katsnelson, M. Lamberti, G. Agnello and S. Oktyabrsky -- First electrically injected QD-MCLED emitting at 1.3 [mu]m, grown by metal organic chemical vapor deposition / V. Tasco, M. T. Todaro, M. De Giorgi, M. De Vittorio, R. Cingolani and A. Passaseo -- Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31 [mu]m / V. Celibert, B. Salem, G. Guillot, C. Bru-Chevallier, L. Grenouillet, P. Duvaut, P. Gilet and A. Million.
• The effects of atmosphere, temperature, and bandgap on the annealing of GaInNAs for solar cell applications / A. J. Ptak, Sarah Kurtz, M. Young and C. Kramer -- Analysis of emission rate measurements in a material showing a meyer-neldel rule / Richard S. Crandall -- MBE growth study of GaAsSbN/GaAs single quantum wells / Liangjin Wu, Shanthi Iyer, Kalyan Nunna, Jia Li, Sudhakar Bharatan, Ward Collis and Kevin Matney -- Growth and characterization of GaPNAs on Si / John Geisz, J. M. Olson, W. E. McMahon, T. Hannappel, K. Jones, H. Moutinho and M. M. Al-Jassim -- Analysis of photoluminescence efficiency of annealed GaInNAs quantum well grown by solid source molecular beam epitaxy / Ng Tien Khee, Yoon Soon Fatt and Fan Weijun -- Laser power and temperature dependent photoluminescence characteristics of annealed GaInNAs/GaAs quantum well / Ng Tien Khee, Yoon Soon Fatt and Fan Weijun -- Crystal growth and electrical characterization of InSbN grown by metalorganic vapor phase epitaxy / T. Ishiguro, Y. Kobori, Y. Nagawa, Y. Iwamura and S. Yamaguchi -- Defects and surfactant action of antimony on GaAs and GaAs[subscript 1-x]N[subscript x] on GaAs [100] by molecular beam epitaxy / W. K. Cheah, W. J. Fan, S. F. Yoon, S. Wicaksono, R. Liu and A. T. S. Wee -- Acceptors in undoped gallium antimonide / M. K. Lui, C. C. Ling, X. D. Chen, K. W. Cheah and K. F. Li -- Undoped gallium antimonide studied by positron annihilation spectroscopy / S. K. Ma, C. C. Ling, H. M. Weng and D. S. Hang -- The influence of GaSb layer thickness on the band gap of InAs/GaSb type-II superlattices for mid-infrared detection / Heather J. Haugan, Frank Szmulowicz and Gail J. Brown -- HVPE-based orientation-patterned GaAs : added-value for non-linear applications / D. Faye, E. Lallier, A. Grisard, B. Gerard and E. Gil-Lafon -- Submicrometer scale growth morphology control for the making of photonic crystal structures / E. Gil-Lafon, A. Trassoudaine, D. Castelluci, A. Pimpinelli, R. Saoudi, O. Parriaux, A. Muravaud and C. Darraud -- Beam induced lateral epitaxy : a new way to lateral growth in molecular beam epitaxy / Shegeya Naritsuka, Koji Saitoh, Takashi Suzuki and Takahiro Maruyama -- A study of anion exchange reactions at GaAs surfaces for heterojunction interface control / Maria Losurdo, Danilo Giuva, Pio Capezzuto, Giovanni Bruno, Terence Brown, Greg Triplett, Gary May and April S. Brown -- Defect engineering and atomic relocation processes in impurity-free disordered GaAs and AlGaAs / P. N. K. Deenapanray, M. Krispin, W. E. Meyer, H. H. Tan, C. Jagadish and F. D. Auret -- Pulsed laser deposition of Bi- and Sb-based solid solutions and multilayer structures / Arik G. Alexanian, Hovsep N. Avetisyan, Karapet E. Avjyan, Nikolay S. Aramyan, Garegin A. Aleksanyan, Romen P. Grigoryan, Ashot M. Khachatryan and Arsham S. Yeremyan -- Growth of rhombohedral B[subscript 12]P[subscript 2] thin films on 6H-Si(0001) by chemical vapor deposition / Peng Lu, J. H. Edgar, J. Pomeroy, M. Kuball, H. M. Meyer and T. Aselage -- Electronic structure of native point defects in ZnGeP[subscript 2] / Xiaoshu Jiang, M. S. Miao and Walter R. L. Lambrecht -- Electrical properties of [beta]-FeSi[subscript 2]/Si hetero-diode improved by pulsed laser annealing / Keiichi Tsuchiya, Noboru Miura, Hironaga Matsumoto, Ryotaro Nakano and Shin-ichiro Uekusa -- Electrostatic force microscopy and secondary electron imaging of double stacking faults in heavily n-type 4H-SiC after oxidation / M. K. Mikhov, B. J. Skromme, R. Wang, C. Li and I. Bhat -- Deep levels in multilayer structures of Si/Si[subscript 0.8]Ge[subscript 0.2] grown by low-pressure chemical vapor deposition / Yutaka Tokuda and Kenichi Shirai -- Estimates of impact ionization coefficients in superlattice-based mid-wavelength infrared avalanche photodiodes / C. H. Grein, K. Abu El-Rub, M. E. Flatte and H. Ehrenreich -- Growth and properties of AlGaInP resonant cavity light emitting diodes (RCLEDs) on Ge/SiGe/Si substrates / O. Kwon, J. Boeckl, M. L. Lee, A. J. Pitera, E. A. Fitzgerald and S. A. Ringel -- Non-contact determination of free carrier concentration in n-GaInAsSb / James E. Maslar, Wilbur S. Hurst, Christine A. Wang and Daniel A. Shiau -- A new class of solar cells : isomeric boron carbide semiconductors with fourth quadrant conductivity / Ravi B. Billa, A. N. Caruso and J. I. Brand -- Infrared dielectric properties of In[subscript 1-x]Ga[subscript x]As epilayers on InP (100) / N. L. Rowell, G. Yu, D. J. Lockwood and P. J. Poole -- MOCVD growth of InAlAsSb layer for high-breakdown voltage HEMT applications / Haruki Yokoyama, Hiroki Sugiyama, Yasuhiro Oda, Michio Sato, Noriyuki Watanabe and Takashi Kobayashi -- Evidence for localization effects in GaAsSb/InP heterostructures from optical spectroscopy / Houssam Chouaib, Catherine Bru-Chevallier, Taha Benyattou, Hacene Lahreche and Philippe Bove -- Modeling of recombination lifetimes in charge-separation device structures / Jamiyanaa Dashdorj, Richard Ahrenkiel and Wyatt Metzger -- Observation of retarded recombination in charge-separation structures / R. K. Ahrenkiel, D. Friedman, W. K. Metzger, M. Page and J. Dashdorj -- Pump wavelength tuning of optical pumping injection cavity lasers for enhancing mid-infrared operation / Todd C. McAlpine, Katherine R. Greene, Michael R. Santilli, Linda J. Olafsen, William W. Bewley, Christopher L. Felix, Igor Vurgaftman, Jerry R. Meyer, M. J. Yang, Hao Lee and Ramon U. Martinelli -- Feature size and density effects in wet selective etching of GaAs/AlAs p-HEMT structures with organic acid-peroxide solutions / Vinay S. Kulkarni, Kanti Prasad, William Quinn, Frank Spooner and Changmo Sung -- 3C-SiC modulator for high-speed integrated photonics / Carlos Angulo Barrios, Christopher Ian Thomas, Michael Spencer and Michal Lipson -- Elevated temperature characteristics of carbon-doped GaInP/GaAs heterojunction bipolar transistor grown by solid source molecular beam epitaxy / Zhang Rong, Yoon Soon Fatt, Tan Kianhua, Sun Zhongzhe and Huang Qingfeng -- Fabrication of side-illuminated p-i-n photodiode with waveguide layers / Byungok Jeon, Seungkee Yang, Hwayoung Kang and Doyoung Rhee -- Characterization of bulk crystals of transition metal doped ZnO for spintronic applications / M. H. Kane, R. Varatharajan, Z. C. Feng, S. Kandoor, J. Nause, C. Summers and I. T. Ferguson -- Optical properties of bulk and epitaxial ZnO for waveguide applications / S. Ganesan, Z. C. Feng, D. Mehta, S. Kandoor, E. J. Womyo, J. Nause and I. Ferguson -- Characterization of zinc oxide single crystals for epitaxial wafer applications / Naoki Ohashi, Takeshi Ohgaki, Shigeaki Sugimura, Katsumi Maeda, Isao Sakaguchi, Haruki Ryoken, Ikuo Niikura, Mitsuru Sato and Hajime Haneda -- Determination of the nitrogen acceptor ionization energy in zinc oxide by photoluminescence spectroscopy / Lijun Wang, N. Y. Garces, L. E. Halliburton and N. C. Giles -- Spin-dependent optical processes in II-VI diluted magnetic semiconductor nanostructures / Yasuo Oka, Kentaro Kayanuma, Mio Sakuma, Ayahito Uetake, Izuru Souma, Zhanghai Chen and Akihiro Murayama -- Mixing rocksalt and wurtzite structure binary nitrides to form novel ternary alloys : SeGaN and MnGaN / Costel Constantin, Hamad Al-Brithen, Muhammad B. Haider, David Ingram and Arthur R. Smith -- Wide bandgap materials for semiconductor spintronics / S. J. Pearton, C. R. Abernathy, G. T. Thaler, R. Frazier, D. P. Norton, J. Kelly, R. Rairigh, A. F. Hebard, Y. D. Park and J. M. Zavada -- CdZnSe/Zn(Be)Se quantum dot structures : size, chemical composition and phonons / Y. Gu, Igor L. Kuskovsky, J. Fung, R. Robinson, I. P. Herman, G. F. Neumark, X. Zhou, S. P. Guo and M. C. Tamargo -- Room-temperature defect tolerance of shape engineered quantum dot structures / Matthew Lamberti, Alex Katsnelson, Michael Yakimov, Gabriel Agnello, Vadim Tokranov and Serge Oktyabrsky --

ISBN

1558997377

Owning Institutions

Columbia University Libraries