Research Catalog

Title

Silicon front-end junction formation--physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A. / editors: Peter Pichler [and others].

Publication

Warrendale, Pa. : Materials Research Society, [2004], ©2004.

Items in the Library & Off-site

Holdings

Details

Additional Authors

• Pichler, P. (Peter)
• Materials Research Society. Fall Meeting (2004 : San Francisco, Calif.)
• Symposium on Silicon Front-End Junction Formation--Physics and Technology (2004 : San Francisco, Calif.)

Description

xvi, 494 pages : illustrations; 24 cm.

Series Statement

Materials Research Society symposia proceedings ; v. 810

Uniform Title

Materials Research Society symposia proceedings ; v. 810.

Subject

• Semiconductors > Junctions > Congresses

Note

• "... Symposium C, "Silicon Front-End Junction Formation--Physics and Technology," was held April 13-15 at the 2004 MRS Spring Meeting in San Francisco, California."--p. xv.

Bibliography (note)

• Includes bibliographical references and indexes.

Contents

• Materials challenges for CMOS junctions / William J. Taylor, Michael J. Rendon, Eric Verret, Jack Jiang, Cristiano Capasso, Dave Sing, Jen-Yee Nguyen, James Smith, Eric Luckowski, Arturo Martinez, Jamie Schaeffer and Phil Tobin -- Device characteristics of ultra-shallow junctions formed by fRTP annealing / A. Satta, R. Lindsay, S. Severi, K. Henson, K. Maex, S. McCoy, J. Gelpey and K. Elliott -- Solid phase epitaxy process integration on 50 nm PMOS devices : effects of defects on chemical and electrical characteristics of ultra-shallow junctions / R. El-Farhane, C. Laviron, F. Cristiano, N. Cherkashin, P. Morin, M. Juhel, P. Stolk, F. Arnaud, A. Pouydebasque, F. Wacquant, D. Lenoble and A. Halimaoui -- Applications of Ni-based silicides to 45 nm CMOS and beyond / Jorge A. Kittl, Anne Lauwers, Oxana Chamirian, Malgorzata A. Pawlak, Mark Van Dal, Amal Akheyar, Muriel De Potter, Anil Kottantharayil, Geoffrey Pourtois, Richard Lindsay and Karen Maex -- Ni-silicided deep source/drain junctions formed by solid phase epitaxial regrowth / Anne Lauwers, Richard Lindsay, Kirklen Henson, Simone Severi, Amal Akheyar, Bartek J. Pawlak, Muriel de Potter and Karen Maex -- Recessed and epitaxially regrown SiGe(B) source/drain junction with NI salicide contacts / Christian Isheden, Per-Erik Hellstrom, Henry H. Radamson and Mikael Ostling -- Formation and morphology evolution of nickel germanides on Ge (100) under rapid thermal annealing / K. Y. Lee, S. L. Liew, S. J. Chua, D. Z. Chi, H. P. Sun and X. Q. Pan -- Erbium-silicided source/drain junction formation by rapid thermal annealing technique for decananometer-scale Schottky barrier metal-oxide-semiconductor field-effect transistors / Moongyu Jang, Yarkyeon Kim, Jaeheon Shin, Kyoungwan Park and Seongjae Lee -- Process modeling for advanced devices / Mark E. Law, Kevin S. Jones, Ljubo Radic, Robert Crosby, Mark Clark, Kevin Gable and Carrie Ross -- Simultaneous phosphorus and Si self-diffusion in extrinsic, isotopically controlled silicon heterostructures / Hughes H. Silvestri, Hartmut A. Bracht, Ian D. Sharp, John Hansen, Arne Nylandsted-Larsen and Eugene E. Haller -- Boron diffusion and silicon self-interstitial recycling between SiGeC layers / M. S. Carroll and J. C. Sturm -- Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions / B. Colombeau, A. J. Smith, N. E. B. Cowern, B. J. Pawlak, F. Cristiano, R. Duffy, A. Claverie, C. J. Ortiz, P. Pichler, E. Lampin and C. Zechner -- On the "life" of {113} defects / N. Cherkashin, P. Calvo, F. Cristiano, B. de Mauduit and A. Claverie -- Doping and mobility profiles in defect-engineered ultra-shallow junctions : bulk and SOI / A. J. Smith, B. Colombeau, R. Gwilliam, E. Collart, N. E. B. Cowern and B. J. Sealy -- Simulation and electron energy-loss spectroscopy of electron beam induced point defect agglomerations in silicon / Nathan G. Stoddard, Gerd Duscher, Wolfgang Windl and George A. Rozgonyi -- Investigation of fluorine effect on the boron diffusion by mean of boron redistribution in shallow delta-doped layers / A. Halimaoui, J. M. Hartmann, C. Laviron, R. El-Farhane and F. Laugier -- Suppression of Ni silicide formation by Se passivation of Si(001) / Janadass Shanmugam, Michael Coviello, Darshak Udeshi, Wiley P. Kirk and Meng Tao -- Study of Ni(Pt) germanosilicides formation on fully-strained Si[subscript 0.9]Ge[subscript 0.1] and Si[subscript 0.899]Ge[subscript 0.1]C[subscript 0.001] by Raman spectroscopy / J. Y. Y. Chaw, K. L. Pey, P. S. Lee, D. Z. Chi and J. P. Liu -- Study of Ge out-diffusion during nickel (platinum ̃0, 5, 10 at. %) germanosilicide formation / L. J. Jin, K. L. Pey, W. K. Choi, E. A. Fitzgerald, D. A. Antoniadis, A. J. Pitera, M. L. Lee and D. Z. Chi -- Ni silicide morphology on small features / Oxana Chamirian, Anne Lauwers, Jorge A. Kittl, Mark Van Dal, Muriel De Potter, Christa Vrancken, Richard Lindsay and Karen Maex -- Effects of alloying on properties of NiSi for CMOS applications / Mark van Dal, Amal Akheyar, Jorge A. Kittl, Oxana Chamirian, Muriel De Potter, Caroline Demeurisse, Anne Lauwers and Karen Maex -- Influence of atomic hydrogen on nickel silicide formation / A. Vangurlekar, Satheesh Balasubramanian, S. Ashok, N. D. Theodore and D. Z. Chi -- Effect of Ge-rich Si[subscript 1-z]Ge[subscript z] segregation on the morphological stability of NiSi[subscript 1-u]Ge[subscript u] film formed on strained (001) Si[subscript 0.8]Ge[subscript 0.2] epilayer / H. B. Yao, D. Z. Chi, S. Tripathy, S. Y. Chow, W. D. Wang, S. J. Chua, H. P. Sun and X. Q. Pan -- Growth of epitaxial CoSi[subscript 2] from cobalt carbonyl on Si(100) substrate / R. Singanamalla, D. W. Greve and K. Barmak -- The use of SiGe barriers during the formation of p[subscript +] shallow junction by ion implantation / Phillip E. Thompson, Joe Bennett and Susan Felch -- Strain relaxation of ion-implanted strained silicon on relaxed SiGe / R. T. Crosby, K. S. Jones, M. E. Law, A. F. Saavedra, J. L. Hansen, A. N. Larsen and J. Liu -- Fabrication of p[superscript +]/n ultra-shallow junctions (USJ) in silicon by excimer laser doping from spin-on glass sources / S. Coutanson, E. Fogarassy and J. Verturini -- Advanced thermal processing of semiconductor materials by flash lamp annealing / W. Skorupa, D. Panknin, M. Voelskow and W. Anwand / The European FLASiC Consortium / T. Gebel, R. A. Yankov, Silke Paul and Wilfried Lerch -- The effect of oxide trenches on defect formation and evolution in ion-implanted silicon / Nina Burbure and Kevin S. Jones -- Millisecond microwave annealing : reaching the 32 nm node / Keith Thompson, John H. Booske, R. L. Ives, John Lohr, Yurii A. Gorelov and Ken Kajiwara -- Activation, diffusion and defect analysis of a spike anneal thermal cycle / Silke Paul, Wilfried Lerch, Xavier Hebras, Nikolay Cherkashin and Fuccio Cristiano -- Technology computer aided design of ultra-shallow junctions in Si devices formed by laser annealing processes / Antonino La Magna, Paola Alippi, Vittorio Privitera, Guglielmo Fortunato, Marco Camalleri and Bengt Svensson -- Ultra-shallow junction formation technology from the 130 to the 45 nm node / Amitabh Jain -- Electrical profiles of ultra-low energy antimony implants in silicon / T. Alzanki, R. Gwilliam, N. Emerson, B. J. Sealy and E. Collart -- Optimization of fluorine co-implantation for PMOS source and drain extension formation for 65 nm technology node / H. Graoui, M. Hilkene, B. McComb, M. Castle, S. Felch, N. E. B. Cowern, A. Al-Bayati, A. Tjandra and M. A. Foad -- Suppression of boron diffusion by fluorine implantation in preamorphized silicon / Giuliana Impellizzeri, Jose H. R. dos Santos, Salvatore Mirabella, Francesco Priolo, Enrico Napolitani and Alberto Carnera -- Post-anneal stress reduction of 200 mm silicon wafers in single wafer rapid thermal annealing / Tsuyoshi Setokubo, Eiichi Nakano, Kazuo Aizawa, Hidekazu Miyoshi, Jiro Yamamoto, Takashi Fukada and Woo Sik Yoo -- Modeling atomistic ion-implantation and diffusion for simulating intrinsic fluctuation in MOSFETs arising from line-edge roughness / Masami Hane, Takeo Ikezawa and Tatsuya Ezaki -- Indium in silicon : interactions with native defects and with C impurities / P. Alippi, A. La Magna, S. Scalese and V. Privitera -- Accurate Monte Carlo simulation of ion implantation into arbitrary 1D/2D/3D structures for silicon technology / Shiyang Tian, Victor Moroz and Norbert Strecker -- Boron-interstitial cluster kinetics : extraction of binding energies form dedicated experiments / Christophe J. Ortiz, Peter Pichler, Volker Haublein, Giovanni Mannino, Silvia Scalese, Vittorio Privitera, Sandro Solmi and Wilfried Lerch -- Lattice strain and composition of boron-interstitial clusters in crystalline silicon / D. De Salvador, G. Bisognin, E. Napolitani, L. Aldegheri, A. V. Drigo, A. Carnera, S. Mirabella, E. Bruno, G. Impellizzeri and F. Priolo --
• Atomistic analysis of the role of silicon interstitials in boron cluster dissolution / Maria Aboy, Lourdes Pelaz, Luis A. Marques, Pedro Lopez and Juan Barbolla -- BIC formation and boron diffusion in relaxed Si[subscript 0.8]Ge[subscript 0.2] / R. T. Crosby, L. Radic, K. S. Jones, M. E. Law, P. E. Thompson, J. Liu, M. Klimov and V. Craciun -- The effect of photoresist outgassing on boron clustering and diffusion in low energy BF[subscript 2][superscript +] ion implantation / Peter Kapalidis and Serguei Kondratenko -- Enhancement of boron activation in shallow junctions by hydrogen / A. Vengurlekar, S. Ashok, C. E. Kalnas and N. D. Theodore -- Interactions of indium, arsenic and carbon in silicon using the pseudopotential technique / M. Shishkin, A. Yan and M. M. De Souza -- Behavior of Si interstitials and boron-interstitial pairs at the Si/SiO[subscript 2] interface / Taras A. Kirichenko, Decai Yu, Sanjay K. Banerjee and Gyeong S. Hwang -- Role of C and Ge in the electrical activation of In implanted in silicon / S. Scalese, V. Privitera, M. Italia, A. La Magna, P. Alippi and L. Renna -- Study of BF[subscript 2] ion implantation into crystalline silicon : influence of fluorine on boron diffusion / Lilya Ihaddadene-Lecoq, Jerome Marcon and Kaouther Ketata -- Concentration dependence of boron-interstitial cluster (BIC) formation in silicon-on-insulator (SOI) / A. F. Saavedra, K. S. Jones, L. Radic, M. E. Law and K. K. Chan -- Diffusion of fluorine at high concentration in silicon : experiments and models / Robert R. Robison, Antonio F. Saavedra and Mark E. Law -- Modeling B clustering in Si and SiGe / Ljubo Radic, Aaron D. Lilak and Mark E. Law -- The effect of fluorine implantation on boron diffusion in metastable Si[subscript 0.86]Ge[subscript 0.14] / Huda A. W. A. El Mubarek, Yun Wang, Janet M. Bonar, Peter Hemment and Peter Ashburn -- Vibrational spectra of nitrogen-oxygen defects in nitrogen doped silicon using density functional theory / F. Sahtout Karoui, A. Karoui, N. Inoue and G. A. Rozgonyi -- Atomistic modeling and simulation of impurity atmosphere in silicon and edge dislocation locking effects / A. Karoui -- Impact of buffered layer growth conditions on grown-in vacancy concentrations in molecular beam epitaxy silicon germanium / Kareem M. Shoukri, Yaser M. Haddara, Andrew P. Knights, Paul G. Coleman, Mohammad M. Rahman and C. C. Tatsuyama -- Arsenic diffusion in Si and Si[subscript 0.9]Ge[subscript 0.1] alloys : effect of defect injection / Suresh Uppal, J. M. Bonar, Jing Zhang and A. F. W. Willoughby -- Modeling dopant diffusion in SiGe and SiGeC alloys / Ardechir Pakfar, Philippe Holliger, Alain Poncet, Cyril Fellous, Didier Dutartre, Thierry Schwartzmann and Herve Jaouen -- A thermal migration of Ge during junction formation in s-Si layers grown on thin SiGe-buffer layers / W. Vandervorst, B. J. Pawlak, T. Janssens, B. Brijs, R. Delhougne, M. Caymax and R. Loo -- The role of preamorphization and activation for ultra-shallow junction formation on strained Si layers grown on SiGe buffer / B. J. Pawlak, W. Vandervorst, R. Lindsay, I. De Wolf, F. Roozeboom, R. Delhougne, A. Benedetti, R. Loo, M. Caymax, K. Maex and N. E. B. Cowern -- Atomistic modeling of ion beam induced defects in Si : from point defects to continuous amorphous layers / Lourdes Pelaz, Luis A. Marques, Pedro Lopez, Ivan Santos, Maria Aboy and Juan Barbolla -- Dopant diffusion in amorphous silicon / R. Duffy, V. C. Venezia, A. Heringa, M. J. P. Hopstaken, C. C. J. Maas, T. Dao, Y. Tamminga and F. Roozeboom -- Enhanced boron diffusion in amorphous silicon / J. M. Jacques, N. Burbure, K. S. Jones, M. E. Law, L. S. Robertson, D. F. Downey, L. M. Rubin, J. Bennett, M. Beebe and M. Klimov -- The role of stress on the shape of the amorphous-crystalline interface and mask-edge defect formation in ion-implanted silicon / Carrie E. Ross and Kevin S. Jones -- Channel engineering and junction overlap issues for ultra-shallow junctions formed by SPER in the 45 nm CMOS technology node / Simone Severi, Kirklen Henson, Richard Lindsay, Anne Lauwers, Bartek J. Pawlak, Radu Surdeanu and K. De Meyer -- Measurements of ultra-shallow junction (USJ) sheet resistance with a non-penetrating four point probe / Robert J. Hillard, Robert G. Mazur, William J. Alexander, C. Win Ye, Mark C. Benjamin and John O. Borland -- A photothermal method of simultaneous determination of ultra-shallow junction depth and abruptness / Alex Salnick, Lena Nicolaides, Jon Opsal, Amitabh Jain, Duncan Rogers and Lance Robertson -- Non-contact electrical measurements of sheet resistance and leakage current density for ultra-shallow (and other) junctions / Vladimir N. Faifer, Michael I. Current, Wojtek Walecki, Vitali Souchkov, Georgy Mikhaylov, Phuc Van, Tim Wong, Tan Nguyen, Jiansong Lu, S. H. Lau and Ann Koo -- XAFS as a direct local structural probe in revealing the effects of C presence in B diffusion in SiGe layers / M. Alper Sahiner, Parviz Ansari, Malcolm S. Carroll, Charles W. Magee, Steven W. Novak and Joseph C. Woicik.

ISBN

1558997601

OCLC

• ocm56190082
• SCSB-5075413

Owning Institutions

Columbia University Libraries