Research Catalog

Title

High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A. / editors: Matty Caymax [and others].

Publication

Warrendale, Pa. : Materials Research Society, [2004], ©2004.

Items in the Library & Off-site

Holdings

Details

Additional Authors

• Caymax, Matty.
• Materials Research Society. Fall Meeting (2004 : San Francisco, Calif.)
• Symposium on High-Mobility Group-IV Materials and Devices (2004 : San Francisco, Calif.)

Description

xii, 304 pages : illustrations; 24 cm.

Series Statement

Materials Research Society symposium proceedings ; v. 809

Uniform Title

Materials Research Society symposia proceedings ; v. 809.

Subject

• Semiconductors > Congresses
• Transition metal compounds > Congresses
• Organometallic compounds > Congresses
• Semiconductor doping > Congresses

Note

• "This volume contains the papers presented at Symposium B, 'High-Mobility Group-IV Materials and Devices,' held April 13-16 at the 2004 MRS Spring Meeting in San Francisco, California."--p. xi.

Bibliography (note)

• Includes bibliographical references and indexes.

Contents

(Selective) epitaxial growth of strained Si to fabricate low cost and high performance CMOS devices / R. Loo, R. Delhougne, P. Meunier-Beillard, M. Caymax, P. Verheyen, G. Eneman, I. De Wolf, T. Janssens, A. Benedetti, K. De Meyer, W. Vandervorst and M. Heyns -- The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates / D. Buca, M. J. Morschbacher, B. Hollander, M. Luysberg, R. Loo, M. Caymax and S. Mantl -- Strained Si-on-insulator fabricated from elastically-relaxed Si/SiGe structures / P. M. Mooney, G. M. Cohen, H. Chen, J. O. Chu and N. Klymko -- Ultra-thin strain relaxed SiGe buffer layers with 40% Ge / Klara Lyutovich, Erich Kasper and Michael Oehme -- A survey of defects in strained Si layers / S. W. Bedell, H. Chen, D. K. Sadana, K. Fogel and A. Domenicucci -- Reduced pressure-chemical vapor deposition of high Ge content (20%-55%) SiGe virtual substrates / Y. Bogumilowicz, J. M. Hartmann, F. Laugier, G. Rolland, T. Billon, V. Renard, E. B. Olshanetsky, O. Estibals, Z. D. Kvon and J. C. Portal -- Influence of He implantation conditions on strain relaxation and threading dislocation density in Si[subscript 0.8]Ge0[subscript 2] virtual substrates / J. Cai, P. M. Mooney, S. H. Christiansen, H. Chen, J. O. Chu and J. A. Ott -- Relaxation of strained SiGe on insulator by direct wafer bonding / Jer-shen Maa, Jong-Jan Lee, Douglas Tweet and Sheng Teng Hsu -- SiGe-on-insulator and Ge-on-insulator substrates fabricated by Ge-condensation technique for high-mobility channel CMOS devices / Tsutomu Tezuka, Tomohisa Mizuno, Naoharu Sugiyama, Shu Nakaharai, Yoshihiko Moriyama, Koji Usuda, Toshinori Numata, Norio Hirashita, Tatsuro Maeda, Shin-ichi Takagi, Yoshiji Miyamura and Eiji Toyoda -- Fabrication of strained silicon on insulator (SSOI) by direct wafer bonding using thin relaxed SiGe film as virtual substrate / J. J. Lee, J. S. Maa, D. J. Tweet and S. T. Hsu -- Strained silicon on insulator wafers made by the smart cut technology / B. Ghyselen, Y. Bogumilowicz, C. Aulnette, A. Abbadie, B. Osternaud, P. Besson, N. Daval, F. Andrieu, I. Cayrefourq, H. Moriceau, T. Ernst, A. Tiberj, O. Rayssac, B. Blondeau, C. Mazure, C. Lagahe-Blanchard, S. Pocas, A.-M. Cartier, J.-M. Hartmann, P. Leduc, C. Di Nardo, J.-F. Lugand, F. Fournel, M.-N. Semeria, N. Kernevez, Y. Campidelli, O. Kermarrec, Y. Morand, M. Rivoire, D. Bensahel, V. Paillard, L. Vincent, A. Claverie and P. Boucaud -- Material and optical properties of GaAs grown on (001) Ge/Si pseudo-substrate / Yves Chriqui, Ludovic Largeau, Gilles Patriarche, Guillaume Saint-Girons, Sophie Bouchoule, Daniel Bensahel, Yves Campidelli, Olivier Kermarrec and Isabelle Sagnes -- Stress metrology : the challenge for the next generation of engineered wafers / Antoine Tiberj, Vincent Paillard, Cecile Aulnette, Nicolas Daval, Konstantin K. Bourdelle, Myriam Moreau, Mark Kennard and Ian Cayrefourcq -- Strain mapping in SiGe by visible Raman spectroscopy / Vasil Pajcini -- Measurement of the residual macro and microstrain in strained Si/SiGe using Raman spectroscopy / P. Dobrosz, S. J. Bull, S. H. Olsen and A. G. O'Neill -- Interference-enhanced Raman scattering in strain characterization of ultra-thin strained SiGe and Si films on insulator / Haizhou Yin, K. D. Hobart, S. R. Shieh, R. L. Peterson, T. S. Duffy and J. C. Sturm -- Heteroepitaxial growth and characterization of Ge and Si[subscript x]Ge[subscript 1-x] films on patterned silicon structures / Ganesh Vanamu, Abhaya K. Datye and Saleem H. Zaidi -- Characterization of structural quality of bonded silicon-on-insulator wafers by spectroscopic ellipsometry and Raman spectroscopy / N. V. Nguyen, J. E. Maslar, Jin-Yong Kim, Jin-Ping Han, Jin-Won Park, D. Chandler-Horowitz and E. M. Vogel -- Island scaling effects on photoluminescence of strained SiGe/Si (100) / Rebecca L. Peterson, Haizhou Yin and J. C. Sturm -- Atomic force microscopy study of conformal sputtering in strained silicon samples / Kuo-Jen Chao and Gary Goodman -- Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for microelectronics and optoelectronics purposes / J. M. Hartmann, A. M. Papon, P. Holliger, G. Rolland, T. Billon, M. Rouviere, L. Vivien and S. Laval -- Germanium-on-insulator (GeOI) structure realized by the smart cut technology / F. Letertre, C. Deguet, C. Richtarch, B. Faure, J. M. Hartmann, F. Chieu, A. Beaumont, J. Dechamp, C. Morales, F. Allibert, P. Perreau, S. Pocas, S. Personnic, C. Lagahe-Blanchard, B. Ghyselen, Y. M. Le Vaillant, E. Jalaguier, N. Kernevez and C. Mazure -- SiGe HBT/BiCMOS technologies and their applications to communication ICs/LSIs / Katsuya Oda, Katsuyoshi Washio and Takashi Hashimoto -- High-performance SiGe MODFET technology / S. J. Koester, J. O. Chu, K. L. Saenger, Q. C. Ouyang, J. A. Ott, D. F. Canaperi, J. A. Tornello, C. V. Jahnes and S. E. Steen -- Optimizing SiGe HBTs technology using small-signal and high frequency noise device's modeling / J. G. Tartarin, G. Cibiel, A. Monroy, V. Le Goascoz and J. Graffeuil -- Analysis of junctions formed in strained Si/SiGe substrates / G. Eneman, E. Simoen, A. Lauwers, R. Lindsay, P. Verheyen, R. Delhougne, R. Loo, M. Caymax, P. Meunier-Beillard, S. Demuynck, K. De Meyer and W. Vandervorst -- High mobility SiGe/Si n-MODFET structures and devices on sapphire substrates / Carl Mueller, Samuel Alterovitz, Edward Croke and George Ponchak -- Atomically controlled impurity doping in Si-based CVD epitaxial growth / Junichi Murota, Masao Sakuraba and Bernd Tillack -- Effect of carbon on diffusion of boron in SiGe between 940-1050[degree]C / Mudith S. A. Karunaratne, Janet M. Bonar, Jing Zhang and Arthur F. W. Willoughby -- Strained channel transistor using strain field induced by source and drain stressors / Yee-Chia Yeo, Jisong Sun and Eng Hong Ong -- Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters / L. Driscoll, S. Olsen, S. Chattopadhyay, A. O'Neill, K. Kwa, P. Dobrosz and S. Bull -- Effect of point defect injection on B diffusion in C containing Si and SiGe / Mudith S. A. Karunaratne, Janet M. Bonar, Jing Zhang and Arthur F. W. Willoughby -- Diffusion of ion-implanted boron and silicon in germanium / Suresh Uppal, A. F. W. Willoughby, J. M. Bonar, N. E. B. Cowern, R. J. H. Morris and M. G. Dowsett -- Phosphorus and boron implantation into (100) germanium / Y. S. Suh, M. S. Carroll, R. A. Levy, A. Sahiner and C. A. King -- Impact of buffered layer growth conditions on grown-in vacancy concentrations in molecular beam epitaxy silicon germanium / Kareem M. Shoukri, Yaser M. Haddara, Andrew P. Knights, Paul G. Coleman, Mohammad M. Rahman and C. C. Tatsuyama -- Arsenic diffusion in Si and Si[subscript 0.9]Ge[subscript 0.1] alloys: effect of defect injection / Suresh Uppal, J. M. Bonar, Jing Zhang and A. F. W. Willoughby -- Modeling dopant diffusion in SiGe and SiGeC alloys / Ardechir Pakfar, Philippe Holliger, Alain Poncet, Cyril Fellous, Didier Dutartre, Thierry Schwartzmann and Herve Jaouen -- A thermal migration of Ge during junction formation in s-Si layers grown on thin SiGe-buffer layers / W. Vandervorst, B. J. Pawlak, T. Janssens, B. Brijs, R. Delhougne, M. Caymax and R. Loo -- The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer / B. J. Pawlak, W. Vandervorst, R. Lindsay, I. De Wolf, F. Roozeboom, R. Delhougne, A. Benedetti, R. Loo, M. Caymax, K. Maex and N. E. B. Cowern -- Physical characterization of HfO[subscript 2] deposited on Ge substrates by MOCVD / S. Van Elshocht, B. Brijs, M. Caymax, T. Conard, S. De Gendt, S. Kubicek, M. Meuris, B. Onsia, O. Richard, I. Teerlinck, J. Van Steenbergen, C. Zhao and M. Heyns -- Retarded growth of sputtered HfO[subscript 2] films on germanium / Koji Kita, Masashi Sasagawa, Masahiro Toyama, Kentaro Kyuno and Akira Toriumi.

ISBN

1558997598

OCLC

• ocm56537169
• SCSB-5089675

Owning Institutions

Columbia University Libraries