Research Catalog

Title

Amorphous and nanocrystalline silicon science and technology--2004 : Symposium held April 13-16, 2004, San Francisco, California, U.S.A. / editors, Gautam Ganguly [and others].

Publication

Warrendale, Pa. : Materials Research Society, [2004], ©2004.

Items in the Library & Off-site

Holdings

Details

Additional Authors

• Abelson, John Robert.
• Materials Research Society. Fall Meeting (2004 : San Francisco, Calif.)
• Symposium on Amorphous and Nanocrystalline Silicon Science and Technology (2004 : San Francisco, Calif.)

Description

xix, 733 pages : illustrations; 24 cm.

Series Statement

Materials Research Society symposium proceedings ; v. 808

Uniform Title

Materials Research Society symposia proceedings ; v. 808.

Subject

• Amorphous semiconductors > Congresses
• Semiconductor films > Congresses
• Silicon crystals > Congresses
• Inhomogeneous materials > Congresses
• Thin film devices > Congresses
• Crystal growth > Congresses
• Chemical vapor deposition > Congresses
• Solar cells > Congresses

Note

• " ... Symposium A, 'Amorphous and Nanocrystalline Silicon Science and Technology--2004,' [was] held April 13-16 at the 2004 MRS Spring Meeting in San Francisco, California ..."--p. xix.

Bibliography (note)

• Includes bibliographical references and indexes.

Contents

• Si wire light emission changes during Si/SiO[subscript x] interface formation / F. G. Becerril-Espinoza, T. V. Torchynska, M. Morales Rodriguez, L. Khomenkova and L. V. Scherbina -- Fabrication and characterization of a germanium quantum-dot transistor formed by selective oxidation of SiGe/Si-on-insulator / W. M. Liao, S. W. Lin, S. S. Tseng, C. K. Lin, M. T. Kuo and P. W. Li -- Understanding the structure of Si nanoclusters in a/nc-Si:H films using spherical aberration-corrected transmission electron microscopy / Christopher R. Perrey, Siri S. Thompson, Markus Lentzen, Uwe Kortshagen and C. Barry Carter -- Correlation between surface charge accumulation and excitation intensity dependent red-shifted micro-photoluminescence of Si-implanted quartz with embedded Si nanocrystals / Chun-Sung Lin, Kuo-Cheng Yu, Hao-Chung Kuo, Miao-Jia Ou-yang and Gong-Ru Lin -- About the luminescence mechanisms of composite a-Si:nc-Si system obtained by ion-beam amorphization in the wide dose region / David I. Tetelbaum, Alexander A. Ezhevskii, Alexey A. Mikhaylov, Mikhail Yu. Lebedev, Yuliya A. Mendeleva, Roman G. Ershov and Sergey V. Morozov -- Buffer-layer effect on mixed-phase cells studied by micro-Raman and photoluminescence spectroscopy / Andrea Hilchey, Chris Lawyer, Keda Wang, Daxing Hah, Baojie Yah, Guozhen Yue, Jeffrey Yang and Subhendu Guha -- Metastability in undoped microcrystalline silicon thin films deposited by HWCVD / S. K. Persheyev, K. A. O'Neill, S. Anthony, M. J. Rose, V. Smirnov and S. Reynolds -- The influence of light-soaking and atmospheric adsorption on microcrystalline silicon films studied by coplanar transient photoconductivity / V. Smirnov, S. Reynolds, F. Finger, C. Main and R. Carius -- Identification of possible bonding sites for post deposition oxygen absorption in microcrystalline silicon / L. M. Gedvilas and A. H. Mahan -- Correlation of hydrogenated nanocrystalline silicon microstructure and solar cell performance / Keda Wang, Anthony Canning, J. R. Weinberg-Wolf, E. C. T. Harley, Daxing Hah, Baojie Yan, Guozhen Yue, Jeffrey Yang and Subhendu Guha -- H evolution from nano-crystalline silicon - comparison of simulation and experiment / R. Biswas and B. C. Pan -- Hydrogen in silicon and germanium : impurity activation and dopant passivation / E. E. Haller -- Influence of the distribution of tail states in a-Si:H on the field dependence of carrier drift mobilities / Monica Brinza, Evguenia V. Emelianova, Andre Stesmans and Guy J. Adriaenssens -- Femtosecond far-infrared studies of photoconductivity in a-Si:H and a-SiGe:H / A. V. V. Nampoothiri and S. L. Dexheimer -- Extension of the constant photocurrent method to determine densities of occupied and unoccupied localized states / Charlie Main, Steve Reynolds, Ivica Zrinscak and Amar Merazga -- Hole drift-mobility measurements and multiple-trapping in microcrystalline silicon / T. Dylla, F. Finger and E. A. Schiff -- Electronic properties of RF glow discharge intrinsic microcrystalline silicon near the amorphous silicon phase boundary / James J. Gutierrez, Adam F. Halverson, Eric D. Tweeten, S. David Cohen, Baojie Yah, Jeffrey C. Yang and Subhendu Guha -- Transient and modulated photoconductivity in microcrystalline silicon / R. Bruggemann, C. Longeaud and J. P. Kleider -- Interpretation of transient photocurrents in coplanar and sandwich PIN microcrystalline silicon structures / Steve Reynolds, Vladimir Smirnov, Charlie Main, Friedhelm Finger and Reinhard Carius -- Electric-field dependence of photocarrier properties in the steady-state photocarrier grating experiment / R. Bruggemann and R. I. Badran -- Metastable defects in a-Si:H and a-Ge:H: the role of hydrogen / T. Su, P. C. Taylor and J. Whitaker -- Evolution of D[superscript 0] and Non-D[superscript 0] light induced defect states in a-Si:H materials and their respective contribution to carrier recombination / J. M. Pearce, J. Deng, V. Vlahos, R. W. Collins, C. R. Wronski, J. Whitaker and P. C. Taylor -- Tritium induced defects in amorphous silicon / J. Whitaker, J. Viner, S. Zukotynski, E. Johnson, P. C. Taylor and P. Stradins -- Study of 3-MeV electron irradiation damage in amorphous silicon with TRMC / A. Klaver, J. M. Warman, M. P. de Haas, J. W. Metselaar and R. A. C. M. M. van Swaaij -- Reversible ordering of a-Si[subscript 1-x]Ge[subscript x] by the combined effect of light and temperature / P. Martin, A. Torres, J. Jimenez, A. Rodriguez, J. Sangrador and T. Rodriguez -- Absence of enhanced stability in deuterated amorphous silicon thin film transistors / Shufan Lin, Andrew J. Flewitt, William I. Milne, Ralf B. Wehrspohn and Martin J. Powell -- Are the current models helpful to understanding Staebler-Wronski degradation? / Bolko van Roedern -- The role of charged gap states in light-induced degradation of single-junction a-Si:H solar cells / M. Zeman, V. Nadazdy and J. W. Metselaar -- Surface processes during growth of hydrogenated amorphous silicon / Eray S. Aydil, Sumit Agarwal, Mayur Valipa, Saravanapriyan Sriraman and Dimitrios Maroudas -- In situ observation of silicon epitaxy breakdown with real-time spectroscopic ellipsometry / Charles W. Teplin, Dean H. Levi, Qi Wang, Eugene Iwaniczko, Kim M. Jones and Howard M. Branz -- Comparison of phase diagrams for vhf and rf plasma-enhanced chemical vapor deposition of Si:H films / G. M. Ferreira, A. S. Ferlauto, J. M. Pearce, C. R. Wronski, C. Ross and R. W. Collins -- Phase diagram and microstructure of microcrystalline and amorphous silicon : a numerical growth simulation / Julien Bailat, Evelyne Vallat-Sauvain, Andre Vallat and Arvind Shah -- A phase diagram for morphology and properties of low temperature deposited polycrystalline silicon grown by hot-wire chemical vapor deposition / Christine E. Richardson, Maribeth S. Mason and Harry A. Atwater -- Roughness evolution of high-rate deposited a-SiN[subscript x]:H films studied by atomic force microscopy and real time spectroscopic ellipsometry / P. J. van den Oever, M. C. M. van de Sanden and W. M. M. Kessels -- Materials and interface optimization of heterojunction silicon (HIT) solar cells using in situ real-time spectroscopic ellipsometry / D. H. Levi, C. W. Teplin, E. Iwaniczko, R. K. Ahrenkiel, H. M. Branz, M. R. Page, Y. Yan, Q. Wang and T. H. Wang -- Enhanced surface diffusion in low-temperature a-Si:H processing / George T. Dalakos, Joel L. Plawsky and Peter D. Persans -- Effects of facet growth and nucleation on microcrystalline silicon by numerical model / Yasuyuki Kobayashi and Koji Satake -- New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams / J. P. M. Hoefnagels, E. Langereis, M. C. M. van de Sanden and W. M. M. Kessels -- Excimer-laser growth of Si large-grain arrays / Masakiyo Matsumura -- Location control of crystal grains in excimer laser crystallization of silicon thin films for single-grain TFTs / Hideya Kumomi, Hiroaki Wakiyama, Gou Nakagawa, Kenji Makihira and Tanemasa Asano -- Formation of periodic grain boundary in an Si thin film crystallized by a linearly polarized Nd:YAG pulse laser with an ultra sonic oscillator / Hirokazu Kaki, Takehiko Ootani and Susumu Horita -- Silicon-hydrogen bonds in boron and phosphorous doped polycrystalline silicon thin films / R. Saleh and N. H. Nickel -- Modeling of aluminum induced lateral crystallization of hydrogenated amorphous silicon / Mohammad Saad Abbasi, Husam Abu-Safe, Hameed Naseem and W. D. Brown -- Aluminum-induced crystallization of PECVD amorphous silicon / Kenneth Jenq, Shawn S. Chang, Yaguang Lian, Grant Z. Pan and Yahya Rahmat-Samii -- Initial interaction of crystalline Al/amorphous Si bilayer during annealing / Yonghao Zhao, Jiangyong Wang and Eric J. Mittemeijer -- The effect of substrate temperature and interface oxide layer on aluminum induced crystallization of sputtered amorphous silicon / Maruf Hossain, Husam Abu-Safe, Marwan Barghouti, Hameed Naseem and William D. Brown --
• In situ aluminum-induced crystallization of Si thin-films on glass substrates above the eutectic temperature using HW-CVD / Ozgenc Ebil, Roger Aparicio and Robert Birkmire -- Solar cells on foreign substrates using poly-Si thin films by metal induced growth / Chunhai Ji and Wayne A. Anderson -- Metal induced crystallization of SiGe at 370[degrees]C for monolithically integrated MEMS applications / Sherif Sedky, Kris Baert, Chris Van Hoof, Yi Wang, Omer Van Der Biest and Ann Witvrouw -- CW argon-ion laser initiated aluminum induced crystallization of amorphous silicon thin films / Sampath K. Paduru, Husam H. Abu-safe, Hameed A. Naseem, Adnan Al-Shariah and William D. Brown -- Reel-to-reel cassette cluster tool system for thin film transistor and four terminal solar cell fabrication / Arun Madan -- Hydrogen injection in ETP plasma jet for fast-deposition of high-quality a-Si:H / A. M. H. N. Petit, R. A. C. M. M. van Swaaij and M. C. M. van de Sanden -- Optical and electronic characterization of a-SiGe:H thin films prepared by a novel hollow cathode deposition technique / R. J. Soukup, N. J. Ianno, Scott A. Darveau and Christopher L. Exstrom -- Low-temperature silicon films deposition by pulsed cathodic arc process for microsystem technologies / Hui Xia, Yan Yang and Paul L. Bergstrom -- Growth and characterization of poly-SiGe prepared by reactive thermal CVD / Jianjun Zhang, Kousaku Shimizu and Jun-ichi Hanna -- External rf substrate biasing during a-Si:H film growth using the expanding thermal plasma technique / A. H. M. Smets, W. M. M. Kessels and M. C. M. van de Sanden -- Structural and electronic properties of SiCl[subscript 4]-based microcrystalline silicon films / Wolfhard Beyer, Reinhard Carius, Michael Lejeune and Uwe Zastrow -- Growth of hydrogenated microcrystalline silicon ([mu]c-Si:H) films by HWCVD using a graphite catalyzer / D. M. Bhusari, P. Kumar, M. Kupich and B. Schroeder -- Influence of catalyzer area and design on the growth of intrinsic hot-wire CVD thin-film silicon for photovoltaic applications / Markus Kupich, Dmitry Grunsky, Bernd Hofferberth and Bernd Schroder -- Deposition of optimal a-Si:H and a-SiGe:H by HWCVD using the same filament temperature and substrate temperature / A. H. Mahan, Y. Xu and L. M. Gedvilas -- An investigation of silicon oxide thin film by atomic layer deposition / Joo-Hyeon Lee, Chang-Hee Han, Un-Jung Kim, Chong-Ook Park, Sa-Kyun Rha and Won-Jun Lee -- High-quality hydrogen-diluted a-SiN[subscript x]:H films deposited by hot-wire chemical vapor deposition / Fengzhen Liu, Lynn Gedvilas, Brian Keyes, Errol Sanchez, Shulin Wang and Qi Wang -- Protocrystalline silicon at high rate from undiluted silane / R. E. I. Schropp, M. K. van Veen, C. H. M. van der Werf, D. L. Williamson and A. H. Mahan -- Suppression of Staebler-Wronski effect induced electrical crosstalk in a-Si:H-based image sensors / Jeremy A. Theil -- Vertically integrated amorphous silicon particle sensors / N. Wyrsch, C. Miazza, S. Dunand, A. Shah, D. Moraes, G. Anelli, M. Despeisse, P. Jarron, O. Dissertori and G. Viertel -- Amorphous silicon backplane with polymer MEMS structures for electrophoretic displays / J. H. Daniel, B. S. Krusor, N. Chopra, R. A. Street, P. M. Kazmaier, S. E. Ready and J. H. Ho -- MEMS microresonators based on nanocrystalline silicon / J. Gaspar, T. Adrega, V. Chu and J. P. Conde -- Increase of temperature and crystallinity during electrical switching in microcrystalline silicon / Jian Hu, Paul Stradins, Howard M. Branz, Qi Wang, J. R. Weinberg-Wolf, E. C. T. Harley, Chris Lawyer, Brittany Huie and Daxing Han -- Threshold voltage and field for metal filament formation in hydrogenated amorphous silicon / P. Stradins, H. M. Branz, W. B. Jackson, R. S. Crandall, J. Hu and Q. Wang -- Development of a porous silicon product for small molecule mass spectrometry / Grace Credo, Hillary Hewitson, Christopher Benevides and Edouard S. P. Bouvier -- Amorphous Si[subscript 1-y]Ge[subscript y]:H, F films obtained by low frequency PECVD for uncooled microbolometers / R. Ambrosio, A. Torres, A. Kosarev, A. S. Abramov, A. Heredia, M. Landa and M. Garcia -- High current density in [mu]c-Si PECVD diodes for low temperature applications / Patricia A. Beck, Janice H. Nickel and Peter G. Hartwell -- Evaluation of an alternative technique for the fabrication of direct detector x-ray imagers : spray pyrolysis of lead iodide and mercury iodide / J. F. Condeles, J. C. Ugucioni and M. Mulato -- Two terminal large area single and double p-i-n devices for image and color recognition / P. Louro, M. Vieira, A. Fantoni, M. Fernandes, C. Nunes de Carvalho and O. Lavareda -- A real-time optical signal and image processing p-i-n/p-i-n device / M. Vieira, P. Louro, M. Fernandes, A. Fantoni, C. Mendes and J. Martins -- Detection limits of a nip a-Si:H linear array position sensitive detector / R. Martins, D. Costa, H. Aguas, F. Soares, A. Marques, L. Ferreira, P. Borges and E. Fortunato -- Performance analysis of a-Si:H detectors deposited on CMOS chips / C. Miazza, S. Dunand, N. Wyrsch, A. Shah, N. Blanc, R. Kaufmann and L. Cavalier -- Amorphous and microcrystalline silicon-based photovoltaic / Subhendu Guha -- Amorphous silicon based solar cell technologies : status, challenges, and opportunities / Rajeewa R. Arya -- The status of and challenges in CdTe thin-film solar-cell technology / Alvin D. Compaan -- High-rate plasma process for microcrystalline silicon : over 9% efficiency single junction solar cells / Takuya Matsui, Akihisa Matsuda and Michio Kondo -- Defect densities, diffusion lengths and device physics in nanocrystalline Si:H solar cells / Vikram L. Dalal, Puneet Sharma, David Staab, Max Noack and Keqin Han -- Microstructure evolution with thickness and hydrogen dilution profile in microcrystalline silicon solar cells / Baojie Yon, Guozhen Yue, Jeffrey Yang, Subhendu Guha, D. L. Williamson, Daxing Hah and Chun-Sheng Jiang -- Large-area hydrogenated amorphous and microcrystalline silicon double-junction solar cells / Baojie Yan, Guozhen Yue, Arindam Banerjee, Jeffrey Yang and Subhendu Guha -- Measurement of the electric potential on amorphous silicon and amorphous silicon germanium alloy thin-film solar cells by scanning kelvin probe microscopy / C.-S. Jiang, H. R. Moutinho, Q. Wang, M. M. Al-Jassim, B. Yan, J. Yang and S. Guha -- Microcrystalline silicon solar cell deposited using modified very-high-frequency glow discharge and its application in multi-junction structures / Guozhen Yue, Baojie Yan, Jessica M. Owens, Jeffrey Yang and Subhendu Guha -- Development of transparent conductive oxide materials for improved back reflector performance for amorphous silicon based solar cells / Scott J. Jones, David Tsu, Tongyu Liu, Jeff Steele, Rey Capangpangan and Masat Izu -- Dominant effect of p/i interface on dark J-V characteristics in p-i-n nano-crystalline Si solar cells / U. Das, A. Bozsa and A. Madan -- Evaluation of Ar-diluted silane PECVD for thin film Si:H based solar cells / J. A. Anna Selvan, Yuan-Min Li, Liwei Li and Alan E. Delahoy -- Devices fabrication with narrow-bandgap a-SiGe:H alloys deposited by HWCVD / Yueqin Xu, Baojie Yan, Brent P. Nelson, Eugene Iwaniczko, Robert C. Reedy, A. H. Mahan and Howard Branz -- Characterization of the bulk recombination in hydrogenated amorphous silicon solar cells / J. Deng, J. M. Pearce, V. Vlahos, R. W. Collins and C. R. Wronski -- Surface potential and surface photovoltage of oxide and nitride coated multicrystalline silicon solar cells using a scanning kelvin probe / Iain D. Baikie -- A simple explanation on the crystallization kinetics of a CW laser crystallization of amorphous silicon / Seong Jin Park, Sang Hoon Kang, Yu Mi Ku and Jin Jang -- 100-nm channel length a-Si:H vertical thin film transistors / Isaac Chan and Arokia Nathan --
• Temperature dependent carrier transport in single-crystalline Si TFTs inside a location-controlled grain / V. Rana, R. Ishihara, Y. Hiroshima, D. Abe, S. Inoue, T. Shimoda, J. W. Metselaar and C. I. M. Beenakker -- Gate overlapped lightly doped drain poly-Si TFTs employing 45[degrees] tilt implant for source and drain / Jae-Hoon Lee, Moon-Young Shin, HeeSun Shin, Woo-Jin Nam and Min-Koo Han -- Accelerated stress testing of a-Si:H TFTs for AMOLED displays / Kapil Sakariya, Clement K. M. Ng, I-Heng Huang, Afrin Sultana, Sheng Tao and Arokia Nathan -- The p-channel a-Si:H thin film transistor with plasma etched copper electrodes / Helinda Nominanda, Guojun Liu, Hyun Ho Lee and Yue Kuo -- Statistical modeling of grain-enhanced polysilicon thin-film transistor in consideration of grain boundary distribution / C. F. Cheng, M. C. Poon, C. W. Kok and M. Chan -- Intrinsic and doped [mu]c-Si:H TFT layers using 13.56 MHz PECVD at 250[degrees]C / Czang-Ho Lee, Denis Striakhilev and Arokia Nathan -- Low temperature (<150[degrees]C) doping techniques for polysilicon TFT's / W. S. Hong, J. M. Kim, S. H. Han, Y. H. Lee, Y. W. Kim, S. H. Lee and D. Y. Kim -- Low temperature (75[degrees]C) hydrogenated nanocrystalline silicon films grown by conventional plasma enhanced chemical vapor deposition for thin film transistors / Czang-Ho Lee, Andrei Sazonov and Arokia Nathan -- Low temperature a-Si:H TFTs with a SiO[subscript 2] gate insulator deposited by liquid phase deposition / Richard B. M. Cross, David P. Oxley, Meenakshi Manhas and Ekkanath M. Sankara Narayanan -- Monolithically integrated p- and n-channel thin film transistors of nanocrystalline silicon on plastic substrates / I-Chun Cheng and Sigurd Wagner -- Fabrication and characterization of hydrogenated amorphous silicon bipolar thin film transistor (B-TFT) / Yue Kuo, Yu Lei and Helinda Nominanda -- Bottom-gate TFTs with channel layer grown by pulsed PECVD technique / David J. Grant, Czang-Ho Lee, Arokia Nathan, Ujjwal K. Das and Arun Madan -- Development of top-gate nanocrystalline Si:H thin film transistors / Jarrod McDonald, Vikram L. Dalal and Max Noack.

ISBN

155899758X

OCLC

• ocm56550214
• SCSB-5089691

Owning Institutions

Columbia University Libraries