Research Catalog

Title

Advances in chemical-mechanical polishing : symposium held April 13-15, 2004, San Francisco, California, U.S.A. / editors: Duane S. Boning [and others].

Publication

Warrendale, Pa. : Materials Research Society, [2004], ©2004.

Items in the Library & Off-site

Holdings

Details

Additional Authors

• Boning, Duane S.
• Materials Research Society. Fall Meeting (2004 : San Francisco, Calif.)
• Symposium on Advances in Chemical-Mechanical Polishing (2004 : San Francisco, Calif.)

Description

xi, 292 pages : illustrations; 24 cm.

Series Statement

Materials Research Society symposium proceedings ; v. 816

Uniform Title

Materials Research Society symposia proceedings ; v. 816.

Alternative Title

Chemical-mechanical polishing

Subjects

• Grinding and polishing > Congresses
• Electrolytic polishing > Congresses

Note

• "The papers here were presented at Symposium K, 'Advances in Chemical-Mechanical Polishing,' held at the 204 MRS Spring Meeting in San Francisco, California ..."--p. xi.

Bibliography (note)

• Includes bibliographical references and indexes.

Contents

Challenges and rewards of low-abrasive copper CMP : evaluation and integration for single-damascene Cu/Low-k interconnects for the 90 nm node / Christopher L. Borst, Stanley M. Smith and Mona Eissa -- Investigation of the influence of different copper slurry systems on post CMP topography performance / Goetz Springer, Peter Thieme and Pierre Klose -- Copper CMP formulation for 65 nm device planarization / Gregory T. Stauf, Karl Boggs, Peter Wrschka, Craig Ragaglia, Michael Darsillo, Jeffrey F. Roeder, Mackenzie King, Jun Liu and Thomas Baum -- Effect of hydrogen peroxide on oxidation of copper in CMP slurries containing glycine and Cu sulfate / Tianbao Du, Arun Vijayakumar and Vimal Desai -- Modified abrasives based on fumed SiO[subscript 2] and Al[subscript 2]O[subscript 3] for the Cu CMP process / D. Zeidler, J. W. Bartha, W. Lortz and R. Brandes -- Novel pure organic particles for copper CMP at low down force / K. Cheemalapati, A. Chowdhury, V. Duvvuru, Yong Lin, Kwok Tang, Guomin Bian, Lily Yao and Yuzhuo Li -- Effect of nano-size silica abrasives in chemical mechanical polishing of copper / Su-Ho Jung and Rajiv K. Singh -- A Model of Cu-CMP / Ed Paul, Vlasta Brusic, Fred Sun, Jian Zhang, Robert Vacassy and Frank Kaufman -- Coherent chip-scale modeling for copper CMP pattern dependence / Hong Cai, Tae Park, Duane Boning, Hyungjun Kim, Youngsoo Kang, Sibum Kim and Jeong-Gun Lee -- Polish profile control using magnetic control head / Manabu Tsujimura, Yu Ishii, Norio Kimura and Masahiro Ota -- Adaptive piezo-controlled carrier for CMP processing / Christian-Toralf Weber, Jurgen Weiser, Dieter Zeidler and Johann W. Bartha -- Metrological assessment of the coefficient of friction of various types of silica using the motor current during ILD-CMP / Harald Jacobsen, Eric Stachowiak, Gerfried Zwicker, Wolfgang Lortz and Ralph Brandes -- A study on the self-stopping CMP process for the planarization of the high step height(@step height>l.5 um) pattern / Kwang-Bok Kim, Hyo-Jin Lee, Ki-Hoon Jang, Joung-Duk Ko, Kyung-Hyun Kim, In-Seac Hwang, Yong-Sun Ko and Chang-Lyong Song -- Modeling of pattern density dependent pressure non-uniformity at a die scale for ILD chemical mechanical planarization / Jihong Choi and David A. Dornfeld -- Effect of abrasive in Cu-CMP slurry on global planarization / Yutaka Nomura, Hiroshi Ono, Hiroki Terazaki, Yasuo Kamigata and Masato Yoshida -- Investigation of mechanical integrity and its effect on polishing for novel polyurethane polishing pad / Parshuram Zantye, S. Mudhivarthi, A. K. Sikder, Ashok Kumar, S. Ostapenko and Julie Harmon -- Interaction between abrasive particles and film surfaces in low down force Cu CMP / Yuchun Wang, Isaac Zomora, Joe Hawkins, Renjie Zhou, Fred Sun, Roy Martinez, Jian Zhang, Bin Lu and Shumin Wang -- Effect of particle interaction on agglomeration of silica-based CMP slurries / A. Sorooshian, R. Ashwani, H. K. Choi, M. Moinpour, A. Oehler and A. Tregub -- Measurement of electroplated copper overburden for advanced process development and control / Joshua Tower, Alexei Maznev, Michael Gostein and Koichi Otsubo -- Micro feature pad development and its performance in chemical mechanical planarization / Sunghoon Lee and David A. Dornfeld -- Characterization of CMP pad surface texture and pad-wafer contact / Gregory P. Muldowney and David B. James -- Modeling CMP transport and kinetics at the pad groove scale / Gregory P. Muldowney -- In situ friction and pad topography measurements during CMP / Caprice Gray, Daniel Apone, Chris Barns, Moinpour Monsour, Sriram Anjur, Vincent Manno and Chris Rogers -- Metrology of psiloquest's application specific pads (ASP) for CMP applications / Parshuram B. Zantye, S. Mudhivarthi, Arun K. Sikder, Ashok Kumar and Yaw Obeng -- Influence of electrochemical plating process parameters on corrosion of Cu damascene interconnects / D. Ernur, W. Wu, S. H. Brongersma, V. Terzieva and K. Maex -- Advances in the CMP process on fixed abrasive pads for the polishing of SOI-substrates with high degree of flatness / Martin Kulawski, Hannu Luoto, Kimmo Henttinen, Ilkka Suni, Frauke Weimar and Jari Makinen -- Analysis of nanotopography in silicon generated by the polishing process / Hiromichi Isogai and Katsuyoshi Kojima -- The application of chemical mechanical polishing for nickel used in MEMS devices / Arun Vijayakumar, Tianbao Du, Kalpathy B. Sundaram and Vimal Desai -- CMP modeling and characterization for polysilicon MEMS structures / Brian Tang and Duane Boning -- Planarization issues in wafer-level three-dimensional (3D) integration / J.-Q. Lu, G. Rajagopalan, M. Gupta, T. S. Cale and R. J. Gutmann -- Pad asperity parameters for CMP process simulation / Takafumi Yoshida -- Assessment of planarization length variation by the step-polish-response (SPR) method / Johann W. Bartha, Tilo Bormann, Kathrin Estel and Dieter Zeidler -- Cerium oxide abrasives - observations and analysis / David R. Evans -- Material removal mechanisms of oxide and nitride CMP with ceria and silica-based slurries - analysis of slurry particles pre- and post-dielectric CMP / Naga Chandrasekaran -- WID rnit variation improvements for HSS STI CMP process using modified scribe lane pattern design / Hyuk Kwon, Yong-Soo Choi, Sang-Hwa Lee, Geun-Min Choi, Yong-Wook Song and Gyu-Han Yoon -- Characterizing STI CMP processes with an STI test mask having realistic geometric shapes / Xiaolin Xie, Tae Park, Duane Boning, Aaron Smith, Paul Allard and Neil Pattel -- Investigation and control of chemical and surface chemical effects during dielectric CMP / J. T. Abiade, W. Choi, V. Khosla and R. K. Singh.

ISBN

1558997660

OCLC

• ocm56811611
• SCSB-5100474

Owning Institutions

Columbia University Libraries