Research Catalog

Title

Integration of advanced micro- and nanoelectronic devices--critical issues and solutions : symposia held April 13-16, 2004, San Francisco, California, U.S.A. / editors: J. Morais [and others].

Publication

Warrendale, Pa. : Materials Research Society, [2004], ©2004.

Items in the Library & Off-site

Holdings

Details

Additional Authors

• Morais, J.
• Materials Research Society. Fall Meeting (2004 : San Francisco, Calif.)
• Symposium on High-k Insulators and Ferroelectrics for Advanced Microelctronic Devices (2004 : San Francisco, Calif.)
• Symposium on Integration Challenges in Next-Generation Oxide-Based Nanoelectronics (2004 : San Francisco, Calif.)

Description

xv, 471 pages : illustrations; 24 cm.

Series Statement

Materials Research Society symposium proceedings ; v. 811

Uniform Title

Materials Research Society symposia proceedings ; v. 811.

Alternative Title

• High-k insulators and ferroelectrics for advanced microelectronic devices
• Integration challenges in next-generation oxide-based nanoelectronics

Subject

• Microelectronics > Equipment and supplies > Congresses
• Nanotechnology > Congresses
• Nanostructured materials > Design and construction > Congresses
• Ferroelectric devices > Congresses

Note

• "This volume is the joint proceedings of papers presented in Symposium D, 'High-k Insulators and Ferroelectrics for Advanced Microelectronic Devices,' and Symposium E, 'Integration Challenges in Next-Generation Oxide-Based Nanoelectronics,' held April 13-16 at the 2004 MRS Spring Meeting in San Francisco, California."--p. xv.

Bibliography (note)

• Includes bibliographical references and indexes.

Contents

• Interval annealing during alternating pulse deposition / J. F. Conley Jr., D. J. Tweet, Y. Ono and G. Stecker -- Atomic layer deposition of aluminum nitride thin films from trimethyl aluminim (TMA) and ammonia / Xiny Liu, Sasangan Ramanathan, Eddie Lee and Thomas E. Seidel -- Characterization of high-k nanolaminates of HfO[subscript 2] and Al[subscript 2]O[subscript 3] used as gate dielectrics in pMOSFETs / Dongping Wu, Jun Lu, Stefan Persson, Per-Erik Hellstrom, Elizaveta Vainonen-Ahlgren, Eva Tois Marko Tuominen, Mikael Ostling and Shi-Li Zhang -- An advanced high-k transistor utilizing metal-organic precursors in an ALD deposition of hafnium oxide and hafnium silicate with ozone as oxidizer / J. Gutt, G. A. Brown, Yoshi Senzaki and Seung Park -- Effects of structural properties of Hf-based gate stack on transistor performance / G. Bersuker, J. H. Sim, C. D. Young, R. Choi, B. H. Lee, P. Lysaght, G. A. Brown, P. M. Zeitzoff, M. Gardner, R. W. Murto and H. R. Huff -- Dielectric breakdown characteristics of poly-Si/HfAIOx/SiON gate stack / Kazuyoshi Torii, Hiroshi Ohji, Akiyoshi Mutoh, Takaaki Kawahara, Riichiro Mitsuhashi, Atsushi Horiuchi, S. Miyazaki and Hiroshi Kitajima -- Electrical breakdown in a two-layer dielectric in the MOS structure / Xiaolong Yang, Qianghua Xie and Meng Tao -- Study of pulsed RF DPN process parameters for 65 nm node MOSFET gate dielectrics / A. Rothschild, P. A. Kraus, T. C. Chua, F. Nouri, F. N. Cubaynes, A. Veloso, S. Mertens, L. Date, R. Schreutelkamp and M. Schaekers -- Controlling area-selective atomic layer deposition of HfO[subscript 2] dielectric by self-assembled monolayers / Rong Chen, Hyoungsub Kim, Paul C. McIntyre and Stacey F. Bent -- Effects of annealing on the mechanical and electrical properties of DC sputtered tantalum pentoxide (Ta[subscript 2]O[subscript 5]) thin films / J. M. Purswani, A. P. Pons, J. T. Glass, R. D. Evans and J. D. Cogdell -- A study of APCVD-deposited TiO[subscript 2] characteristics in the structure of a tunneling transistor / A. Behnam, B. Hekmatchoar, S. Mohajerzadeh, B. Arvan, F. Karbassian and A. Khakifirooz -- Leakage current behavior in CaZrO[subscript 3] thin films for high-k applications / Ting Yu, Weiguang Zhu, Xiaofeng Chen and Yuekang Lu -- Engineering the nm-think interface layer formed between a high-k film and silicon / J. Lu, J.-Y Tewg and Y. Kuo -- Reduction of CV hysteresis in metal/high-k MISFETs using flash lamp post deposition annealing / Takeo Matsuki, Yasushi Akasaka, Kiyoshi Hayashi, Masataka Noguchi, Koji Yamashita, Hideyuki Syoji, Kazuyoshi Torii, Naoki Kasai and Tsunetoshi Arikado -- Influence of pre-oxidation of an Ir film on chemical composition and crystal property of a PZT film deposited on the Ir film by sputtering / Susumu Horita and Makoto Shoga -- MOCVD processes for electronic materials adopting Bi(C[subscript 6]H[subscript 5]) [subscript 3] precursor / C. Bedoya, G. G. Condorelli, G. Anastasi, J. Lisoni, D. Wouters and I. L. Fragala -- Effect of La doping on the structural and electrical properties of SrBi[subscript 2]Ta[subscript 2]O[subscript 9] / Ortega Nora, S. Bhattacharyya, P. Bhattacharya, R. R. Das and R. S. Katiyar -- Analysis of ferroelectric microcapacitors by scanning probe microscope / Nobuhiro Kin and Koichiro Honda -- Effect of different annealing procedures on the microstructure and the electrical properties of CSD derived (Ba,Sr)TiO[subscript 3] thin films / Sandip Halder, Theodor Schneller and Rainer Waser -- Structural, dielectric and pyroelectric properties of lanthanum modified lead titanate thin films / Sonalee Chopra, Seema Sharma, T. C. Goel and R. G. Mendiratta -- Investigations of Pb[subscript x]Sr[subscript 1-x]TiO[subscript 3] thin films and ceramics for microelectronic applications / M. Jain, Yu I. Yuzyuk, R. S. Katiyar, Y. Somiya, A. S. Bhalla, F. A. Miranda and F. W. VanKeuls -- Investigations of metal gate electrodes on HfO[subscript 2] gate dielectrics / Jamie Schaeffer, Sri Samavedam, Leonardo Fonseca, Cristiano Capasso, Olubunmi Adetutu, David Gilmer, Chris Hobbs, Eric Luckowski, Rich Gregory, Zhi-Xiong Jiang, Yong Liang, Karen Moore, Darrell Roan, Bich-Yen Nguyen, Phil Tobin and Bruce White -- Highly reliable metal gate nMOSFETs by improved CVD-WSix films with work function of 4.3eV / Kazuaki Nakajima, Hiroshi Nakazawa, Katsuyuki Sekine, Kouji Matsuo, Tomohiro Saito, Tomio Katata, Kyoichi Suguro and Yoshitaka Tsunashima -- Tunable workfunction with TaN metal gate on HfO[subscript 2]-Hf[subscript x]Si[subscript y]O dielectrics / Christopher S. Olsen, Philip A. Kraus, Khaled Z. Ahmed, Shreyas Kher, Steven Hung, Nety Krishna, Jeff Chen, Lucien Date, Marc Burey and Jason Campbell -- Physical characterization of HfO[subscript 2] deposited on Ge substrates by MOCVD / S. Van Elshocht, B. Brijs, M. Caymax, T. Conard, S. De Gendt, S. Kubicek, M. Meuris, B. Onsia, O. Richard, I. Teerlinck, J. Van Steenbergen, C. Zhao and M. Heyns -- Retarded growth of sputtered HfO[subscript 2] films on germanium / Koji Kita, Masashi Sasagawa, Masahiro Toyama, Kentaro Kyuno and Akira Toriumi -- Electrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric gate stack / J. L. Autran, D. Munteanu, M. Houssa, M. Bescond, X. Garros and C. Leroux -- Defect energy levels in HfO[subscript 2], ZrO[subscript 2], La[subscript 2]O[subscript 3] and SrTiO[subscript 3] / K. Xiong, P. W. Peacock and J. Robertson -- Pr4f occupancy and VB/CB band offsets of Pr[subscript 2]O[subscript 3] at the interface to Si(001) and SiC(0001) surfaces / Dieter Schmeisser and H. J. Muessig -- On the nature of weak spots in high-k layers submitted to anneals / J. Petry, W. Vandervorst, O. Richard, T. Conard, P. DeWolf, V. Kaushik, A. Delabie and S. Van Elshocht -- Nitrogen distribution and oxidation of HfO[subscript x]N[subscript y] gate dielectrics deposited by MOCVD using [(C[subscript 2]H[subscript 5]) [subscript 2]N] [subscript 4]Hf with NO and O[subscript 2] / Minsoo Lee, Dolf Landheer, Xiaohua Wu, Martin Couillard, Zhenghong Lu, Wai T. Ng, Jianhao Chen, Tiensheng Chao and Tanfu Lei -- Ozone-based atomic layer deposition of HfO[subscript2] and Hf[subscript x]Si[subscript 1-x]O[subscript 2] and film characterization / Yoshihide Senzaki, Seung Park, Douglas Tweet, John F. Conley Jr. and Yoshi Ono -- Nitridatio of hafnium silicate thin films / Hood Chatham, Yoshi Senzaki, Jeff Bailey and Wesley Nieveen -- Process optimization and integratio nof HfO[subscript 2] and Hf-silicates / Hideki Takeuchi and Tsu-Jae King -- Comparison of chemical vapor deposited hafnium dioxide and silicon doped hafnium dioxide using either O[subscript 2],N[subscript 2]O,H[subscript 2]O,O[subscript 2] plasma, or N[subscript 2]O plasma, and Hf (IV) t-butoxide / Harish B. Bhandari, Ping Chen and Tonya M. Klein -- Systematic examination of boron diffusion phenomenon in HfSiON high-k gate insulator / Masato Koyama, Tsunehiro Ino, Yuuichi Kamimuta, Masamichi Suzuki, Chie Hongo and Akira Nishiyama -- Ultrathin dielectric films grown by solid phase reaction of Pr with SiO[subscript 2] / Hans-Joachim Mussig, Jarek Dabrowski, Christian Wenger, Grzegorz Lupina, Roland Sorge, Peter Formanek, Peter Zaumseil and Dieter Schmeisser -- Low tempertature sputter deposition of Ba[subscript 0.96]Ca[subscript 0.04]Ti[subscript 0.84]Zr[subscript 0.16]O[subscript 3] thin films on Ni electrodes / N. Cramer, Elliot Philofsky, Lee Kammerdiner and T. S. Kalkur -- Microstructure and ferroelectric characteristics of ultra-thin BaTiO[subscript 3] films / Y. Drezner and S. Berger -- Epitaxial growth and structure of thin single crystal [gamma]-Al[subscript 2]O[subscript 3] films on Si (111) using e-beam evaporation of sapphire in ultra-high vacuum / M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts and S. Y. Wu -- MOCVD of SrTa[subscript 2]O[subscript 6] thin films for high-k applications / Stephan Regnery, Reji Thomas, Hans Haselier, Peter Ehrhart, Rainer Waser, Peer Lehnen, Stefan Miedl and Markus Schumacher --
• Atomic vapor deposition (AVD[superscript TM]) process for high performance HfO[subscript 2] dielectric layers / V. Cosnier, K. Dabertrand, S. Blonkowski, S. Lhostis, S. Zoll, Y. Morand, S. Descombes, B. Guillaumot, C. Hobbs, N. Rochat, G. Rolland, O. Renault, X. Garros, M. Casse, J. Miltard, P. Lehnen, S. Miedl, J. Lindner and M. Schumacher -- Growth of Pr[subscript 2]O[subscript 3] layers by pulsed injection MOCVD / A. Abrutis, A. Bartasyte, A. Teiserskis, Z. Saltyte, P. K. Baumann, M. Schumacher, J. Lindner and T. McEntee -- Properties of Pr-based high-k dielectric films obtained by metal-organic chemical vapor deposition / Raffaella Lo Nigro, Roberta G. Toro, Graziella Malandrino, Vito Raineri and Ignazio L. Fragala -- Processing and on-wafer measurements of ferroelectric interdigitated tunable microwave capacitors / Alexander M. Grishin, Jang-Yong Kim and Sergey I. Khartsev -- Crystallization behavior of Hf-rich aluminates and influence on film dielectric properties / M. Climent, B. Crivelli, G. Righini, S. Alberici, M. Alessandri, A. C. Elbaz, G. Pavia and C. Wiemer -- Infrared absorption study of HfO[subscript 2] and HfO[subscript 2]/Si interface ranging from 200 cm[superscript -1] to 2000 cm[superscript -1] / Kazuyuki Tomida, Haruka Shimizu, Koji Kita, Kentaro Kyuno and Akira Toriumi -- Structure of Sc[subscript 2]O[subscript 3] films epitaxially grown on [alpha]-Al[subscript 2]O[subscript 3] (111) / A. R. Kortan, M. Hong, J. Kwo, P. Chang, C. P. Chen, J. P. Mannaerts and S. H. Liou -- Highly-insulating ultra-thin SiO[subscript 2] film grown by VUV photo-oxidation / Atsuyuki Fukano and Hiroyuki Oyanagi -- Experimental study of etched back thermal oxide for optimization of the Si/high-k interface / Joel Barnett, N. Moumen, J. Gutt, M. Gardner, C. Huffman, P. Majhi, J. J. Peterson, S. Gopalan, B. Foran, H.-J. Li, B. H. Lee, G. Bersuker, P. M. Zeitzoff, G. A. Brown, P. Lysaght, C. Young, R. W. Murto and H. R. Huff -- Next generation of thin film transistors based on zinc oxide / E. Fortunato, P. Barquinha, A. Pimentel, A. Goncalves, L. pereira, A. Marques and R. Martins -- Comparison of digital versus continuous growth techniques for MgCaO dielectric on GaN / A. H. Onstine, A. Herrero, B. P. Gila, D. Stodilka, C. R. Abernathy, J. LaRoche, F. Ren and S. J. Pearton -- Fundamental study and oxide reliability of the MBE-grown Ga[subscript 2-x]Gd[subscript x]Ov 3] dielectric oxide for compound semiconductor MOSFETs / J. Kwo, M. Hong, J. P. Mannaerts, Y. J. Lee, Y. D. Wu, W. G. Lee, S. Milkap, B. Yang and T. Gustaffson -- Fin sidewall microroughness measurement by AFM / Carolyn F. H. Gondran, Emily Morales, Angela Guerry, Weize Xiong, C. Rinn Cleavelin, Rick Wise, Sriram Balasubramanian and Tsu-Jae King -- Bulk-like ferroelectric and piezoeletric properties of transferred-BaTiO[subscript 3] single crystal thin films / Young-Bae Park, Jennifer L. Ruglovsky, Matthew J. Dicken and Harry A. Atwater -- Comparison of sol-gel derived and pulsed laser deposited epitaxial La[subscript 0.67]Ca[subscript 0.33]MnO[subscript 3] films for IR bolometer / Rickard Fors, Annika Pohl, Sergey Khartsev, Alexander Grishin and Gunnar Westin -- Persistent electronic conduction in 12CaO-7Al[subscript 2]O[subscript 3] thin films produced by Ar Ion implantation : selective kick-out effect leads to electride thin films / Masashi Miyakawa, Katsuro Hayashi, Yoshitake Toda, Toshio Kamiya, Masahiro Hirano and Hideo Hosono -- Carrier transport of extended and localized states in InGaO[subscript 3](ZnO) [subscript 5] / Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano and Hideo Hosono -- Photo-induced magnetism of Pr[subscript 0.65]Ca[subscript 0.35]MnO[subscript 3] in powder and thin films / Takanobu Otagiri, Masato Arai, Masakazu Kodaira, Osami Yanagisawa and Mitsuru Izumi -- Epitaxial La[subscript 0.67](Sr,Ca) [subscript 0.33]MnO[subscript 3] films on Si for IR bolometer applications / A. M. Grishin, S. I. Khartsev, J.-H. Kim and Jun Lu -- Structural and electrical properties of Ba[subscript 0.5]Sr[subscript 0.5]TiO[subscript 3] thin films for tunable microwave applications / Sriraj G. Manavalan, Ashok Kumar, T. Weller and A. K. Sikder -- Electrical properties of the La[subscript 0.8]Sr[subscript 0.2]MnO[subscript 3] thin films on SrTiO[subscript 3] substrate by an excimer laser metal organic deposition (ELMOD) process at low temperature / T. Tsuchiya, T. Yoshitake, Y. Shimakawa, I. Yamaguchi, T. Manabe, T. Kumagai, Y. Kubo and S. Mizuta -- Preparations and evaluations of magnetoelectric thin films for Josephson field effect transistor / Nobuyuki Iwata, Koji Matsuo, Noriaki Ootsuka and Hiroshi Yamamoto -- Evaluation of AlO[subscript x] in Co/AlO[subscript x]/Co spin tunneling junctions by XPS / Yuki Otaka, Hideo Kaiju, Mao Nishiyama, Naoki Sakaguchi and Kazuo Shiiki -- High mobility nanocrystalline indium zinc oxide deposited at room temperature / E. Fortunato, A. Pimentel, A. Goncalves, A. Marques and R. Martins -- Nanoscale etching of metallic perovskites using STM / O. Dahl, S. Hallsteinsen, J. K. Grepstad, A. Borg and T. Tybell -- Guided controll of Cu[subscript 2]O nanodot self-assembly on SrTiO[subscript 3] (100) / Yingge Du, Surajit Atha, Robert Hull, James F. Groves, Igor Lyubinetsky and Donald R. Baer -- Two-dimensional electronic structures in layered oxychalcogenide semiconductors, LaCuOCh (Ch=S, Se, Te) and La[subscript 2]CdO[subscript 2]Se[subscript 2] / Toshio Kamiya, Kazushige Ueda, Hidenori Hiramatsu, Hiromichi Ohta, Masahiro Hirano and Hideo Hosono.

ISBN

155899761X

OCLC

• ocm56536897
• SCSB-5100475

Owning Institutions

Columbia University Libraries