Research Catalog

Title

Materials and processes for nonvolatile memories : symposium held November 340-December 2, 2004, Boston, Massachusetts, U.S.A. / editors, A. Claverie [and others].

Publication

Warrendale, Pa. : Materials Research Society, [2005], ©2005.

Items in the Library & Off-site

Holdings

Details

Additional Authors

• Claverie, A.
• Materials Research Society. Fall Meeting (2004 : Boston, Mass.)
• Symposium on Materials and Processes for Nonvolatile Memories (2004 : Boston, Mass.)

Description

xiii, 390 pages : illustrations; 24 cm.

Series Statement

Materials Research Society symposium proceedings ; v. 830

Uniform Title

Materials Research Society symposia proceedings ; v. 830.

Subjects

• Semiconductor storage devices > Materials > Congresses
• Electronics > Materials > Congresses
• Integrated circuits > Materials > Congresses

Note

• "This volume contain papers presented at Symposium D, 'Materials and Processes for Nonvolatile memories, ' held November 29-December 2 at the 2004 MRS Fall Meeting in Boston, Massachusetts ..."--P. xiii.

Bibliography (note)

• Includes bibliographical references and indexes.

Contents

• Future directions of non-volatile memory technologies / Albert Fazio -- Nonvolatile memory technologies : floating gate concept evolution / Cesare Clemnti and Roberto Bez -- Lateral distribution of electrons trapped in nitride layers / M. Lorenzini, M. Rosemeulen, L. Breuil, L. Haspeslagh, J. Van Houdt and K. De Meyer -- Backside storage non-volatile memories : ultra-thin silicon layer on a complex thin film structure / H. Silva and S. Tiwari -- Integration and performance improvements of silicon nanocrystal memories / T. Hiramoto, I. Kim, M. Saitoh and K. Yanagidaira -- Optimization and simulation of an alternative nano-flash memory : the SASEM device / C. Krzeminski, E. Dubois, X. Tang, N. Reckinger, A. Crahay and V. Bayot -- Influence of thermal treatments on the chemistry and self-assembly of Ge nanoparticles on SiO[subscript 2] surfaces / Scott K. Stanley, Shawn S. Coffee and John G. Ekerdt -- Low voltage and high speed silicon nanocrystal memories / Josep Carreras, B. Garrido, J. Arbiol and J. R. Morante -- Ferroelectric thin film depositions for various types of FeRAMs (ferroelectric random access memories) / Yoshihisa Fujisaki and Hiroshi Ishiwara -- Step coverage and composition of Pb(Zr,Ti)O[subscript 3] capacitors prepared on sub-micron three-dimensional trench structure by metalorganic chemical vapor deposition / Atsushi Nagai, Gouji Asano, Jun Minamidate, Chel Jong Choi, Choong-Rae Cho, Youngsoo Park and Hiroshi Funakubo -- [delta]-Nb-doping effect to the interface between IrO[subscript 2] top electorde and Pb(Zr,Ti)O[subscript 3] by metal organic chemical vapor deposition / Osamu Matsuura, Hideki Yamawaki, Masaki Nakabayashi, Yoshimasa Horii and Yoshihiro Sugiyama -- Quantifying the role of electronic charge trap states on imprint behavior in ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) thin films / Connie Lew and Michael O. Thompson -- Ferroelectric 1-T memory device - will it be viable for nonvolatile memory applications? / Jin-Ping Han -- Non-volatile thin film transistors using ferroelectric/ITO structures / Eisuke Tokumitsu, Takaaki Miyasako and Masaru Senoo -- Long time data retention and a mechanism in ferroelectric-gate field effect transistors with HfO[subscript 2] buffer layer / Koji Aizawa, Yoshihito Kawashima and Hiroshi Ishiwara -- Device structures and characterization of one transistor ferroelectric memory devices / Tingkai Li, Sheng Teng Hsu, Bruce Ulrich and Dave Evans -- Improvement of ferroelectric and electrical properties of Sol-Gel deposited Bi[subscript 4]Ti[subscript 3]O[subscript 12] thin films by multiple rapid thermal annealing techniques / Hua Wang and Minfang Ren -- Characterization of MFMIS and MFIS structures for non-volatile memory applications / Mosiur Rahman, T. S. Kalkur, Shunming Sun, Fred P. Gnadinger, David Dalton, Daesig Kim, Viorel Olariu and David Klingensmith -- Improvement of ferroelectric properties of lead zirconate titanate thin films by ion-substitution using rare-earth cations / Hiroshi Nakaki, Hiroshi Uchida, Shoji Okamoto, Shintaro Yokoyama, Hiroshi Funakubo and Seiichiro Koda -- Perfectly c-axis oriented epitaxial lead titanate thin film deposited by a hydrothermal method for a data storage medium / Takeshi Morita and Yasuo Cho -- Switching properties of PST ferroelectric films for memory applications using conductive oxide LSCO electrodes / E. Martinez, O. Blanco and J. M. Siqueiros -- Excimer (XeCl) laser annealing of PbZr[subscript 0.4]Ti[subscript 0.6]O[subscript 3] thin film at low temperature for TFT FeRAM application / W. X. Xianyu, H. S. Cho, J. Y. Kwon, H. X. Yin and T. Noguchi -- Development of nonvolatile memory using well-ordered ferroelectirc linear molecules / Kenji Ishida, Kazunari Katsumoto, Shuichiro Kuwajima, Toshihisa Horiuchi, Hirofumi Yamada and Kazumi Matsushige -- Dielectric and fatigue properties of Pb(Zr[subscript 0.53]Ti[subscript 0.47])O[subscript 3] thin films prepared from oxide percursors method / Silvia T. Shibatta-Kagesawa, C. A. Guarany, E. B. Araujo and N. Oki -- UV assisted rapid thermal processing of strontium bismuth tantalate (SBT) thin films / S. O'Brien, P. K. Hurley, G. M. Crean, J. Johnson, C. Caputa and D. Wouters -- Thin ferroelectric film between double Schottky barriers / Lyuba A. Delimova, Igor V. Grekhov, Dmitri V. Mashovets, Sangmin Shin, June-Mo Koo, Suk-Pil Kim and Youngsoo Park -- Reliability of 4-Mbit toggle MRAM / Johan Akerman, Philip Brown, Brian Butcher, Renu Dave, Mark DeHerrera, Mark Durlam, Brad Engel, Earl Fuchs, Mark Griswold, Greg Grynkewich, Jason Janesky, John Martin, Joseph Nahas, Srinivas Pietambaram, Nick Rizzo, Jon Slaughter, Ken Smith, Ji-Jun Sun and Saied Tehrani -- Semiconductor nanocrystal floating-gate memory devices / P. Dimitrakis and P. Normand -- Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications / C. Bonafos, N. Cherkashin, M. Carrada, H. Coffin, G. Ben Assayag, S. Schamm, P. Dimitrakis, P. Normand, M. Perego, M. Fanciulli, T. Muller, K. H. Heinig, A. Argawal and A. Claverie -- Characterization of number fluctuations in gate-last metal nanocrystal nonvolatile memory array beyond 90 nm CMOS technology / Chungho Lee, Udayan Ganguly and Edwin C. Kan -- Reliable, fast and long retention Si nanocrystal non-volatile memories / Josep Carreras, B. Garrido, J. Arbiol and J. R. Morante -- Local self-order observed during chemical vapor deposition of silicon quantum dots for application in nanocrystal memories / Rosaria A. Puglisi, Giuseppe Nicotra, Salvatore Lombardo, Barbara De Salvo and Cosimo Gerardi -- A model of silicon nanocrystal nucleation and growth on SiO[subscript 2] by CVD / M. W. Stoker, T. P. Merchant, R. Rao, R. Muralidhar, S. Straub and B. E. White, Jr. -- Characterization of electronic charged states of silicon nanocrystals as a floating gate in MOS structures / Seiichi Miyazaki, Taku Shibaguchi and Mitsuhisa Ikeda -- Improved size dispersion of silicon nanocrystals grown in a batch LPCVD reactor / Y. M. Wan, K. van der Jeugd, T. Baron, B. De Salvo and P. Mur -- Ge nanocrystals in MOS-memory structures produced by molecular-beam epitaxy and rapid-thermal processing / A. Nylandsted Larsen, A. Kanjilal, J. Lundsgaard Hansen, P. Gaiduk, P. Normand, P. Dimitrakis, D. Tsoukalas, N. Cherkashin and A. Claverie -- Chemical vapor deposition of germanium nanocrystals on hafnium oxide for non-volatile memory applications / Ying Qian Wang, Jing Hao Chen, Won Jong Yoo and Yee-Chia Yeo -- Synthesis and electrical characterization of a MOS memory containing Pt nanoparticles deposited at a SiO[subscript 2]HfO[subscript 2] interface / Ch. Sargentis, K. Giannakopoulos, A. Travlos and D. Tsamakis -- Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO[subscript 2] layers / H. Coffin, C. Bonafos, S. Schamm, N. Cherkashin, M. Respaud, G. Ben Assayag, P. Dimitrakis, P. Normand, M. Tence, C. Colliex and A. Claverie -- Gold Langmuir-Blodgett deposited nanoparticles for non-volatile memories / S. Kolliopoulou, D. Tsoukalas, P. Dimitrakis, P. Normand, S. Paul, C. Pearson, A. Molloy and M. C. Petty -- Small "magnetic" clusters of Ga and in with as and V / Liudmila A. Pozhar, Alan T. Yeates, Frank Szmulowicz and William C. Mitchel -- Search for magnetism in Co and Fe-doped HfO[subscript 2] thin films for potential spintronic applications / M. S. R. Rao, Darshan C. Kundaliya, S. Dhar, C. A. Cardoso, A. Curtin, S. J. Welz, R. Erni, N. D. Browning, S. E. Lofland, C. J. Metting, S. B. Ogale and T. Venkatesan -- Growth temperature and properties of Ge[subscript 4]Sb[subscript 3]Te[subscript 3] films / W. D. Song, L. P. Shi, X. S. Miao, X. Hu, H. K. Lee, R. Zhao, J. F. Chong and T. C. Chong -- Preparation of strontium bismuth tantalate thin film by liquid-delivery metalorganic chemical vapor deposition / M. Silinskas, M. Lisker, B. Kalkofen, S. Matichyn, B. Garke and E. Burte --
• All-organic single-transistor permanent memory device / Raoul Schroeder, Leszek A. Majewski, Monika Voigt and Martin Grell -- Enhanced spontaneous polarization of dysprosium-substituted lead zirconate titanate thin films by a chemical solution deposition method / Hiroshi Uchida, Hiroshi Nakaki, Shoji Okamoto, Shintaro Yokoyama, Hiroshi Funakubo and Seiichiro Koda -- Polymer electrical bistable device and memory cells / Jianyong Ouyang, Chih-Wei Chu, Ankita Prakash and Yang Yang -- Organic memory devices using C[subscript 60] and insulating polymer / Alokik Kanwal, Shashi Paul and Manish Chhowalla -- Experimental observation of non-volatile charge injection and molecular redox in fullerenes C[subscript 60] and C[subscript 70] in an EEPROM-type device / Udayan Ganguly, Chungho Lee and Edwin C. Kan -- Prospect of emerging nonvolatile memories / Hongsik Jeong and Kinam Kim -- Effect of the bottom electrode contact (BEC) on the phase transformation of N[subscript 2] doped Ge[subscript 2]Sb[subscript 2]Te[subscript 5] (N-GST) in a phase-change random access memory / Suyoun Lee, Y. J. Song, Y. N. Hwang, S. H. Lee, J. H. Park, K. C. Ryoo, S. J. Ahn, C. W. Jeong, J. H. Oh, J. M. Shin, F. Yeung, W. C. Jeong, Y. T. Kim, J. B. Park, K. H. Koh, G. T. Jeong, H. S. Jeong and Kinam Kim -- Non-volatile giant resistance switching in metal-insulator-manganite junctions / Rickard Fors, Sergey I. Khartsev and Alexander M. Grishin.

ISBN

1558997784

OCLC

• ocm59667542
• SCSB-5183809

Owning Institutions

Columbia University Libraries