Research Catalog

Title

Progress in compound semiconductor materials IV--electronic and optoelectronic applications : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A. / editors: Gail J. Brown [and others].

Publication

Warrendale, Pa. : Materials Research Society, [2005], ©2005.

Items in the Library & Off-site

Holdings

Details

Additional Authors

• Friedman, Daniel J. (Daniel Joseph)
• Materials Research Society. Fall Meeting (2003 : Boston, Mass.)
• Symposium on Progress in Compound Semiconductor Materials--Electronic and Optoelectronic Applications (4th : 2004 : Boston, Mass.)

Description

xv, 537 pages : illustrations; 24 cm.

Series Statement

Materials Research Society symposium proceedings ; vol. 829

Uniform Title

Materials Research Society symposia proceedings ; v. 829.

Subjects

• Electrooptics > Congresses
• Compound semiconductors > Design and construction > Congresses

Note

• "Symposium B, 'Progress in Compound Semiconductor Materials IV--Electronic and Optoelectronic Applications,' [was] held November 29-December 3 at the 2004 MRS Fall Meeting in Boston, Massachusetts."--p.. xv.

Bibliography (note)

• Includes bibliographical references and indexes.

Contents

• Atomic force microscopy and spectroscopy of self-assembled InAsSb quantum dots grown on InP substrates by MOCVD / Yongkun Sin, Hyun I. Kim, Gary W. Stupian and Yueming Qiu -- Quantum-dot molecules for potential applications in terahertz devices / Valeria Gabriela Stoleru, Elias Towe, Chaoying Ni and Debdas Pal -- Intersubband transitions in In[subscript 0.3]Ga[subscript 0.7]As/GaAs multiple quantum dots of varying dot-sizes / Y. C. Chua, Jie Liang, B. S. Passmore, E. A. DeCuir, M. O. Manasreh, Zhiming Wang and G. J. Salamo -- (110) InAs quantum dots : growth, single-dot luminescence and cleaved edge alignment / D. Wasserman, E. A. Shaner, S. A. Lyon, M. Hadjipanayi, A. C. Maciel and J. F. Ryan -- The definition of multiple bandgaps in quantum-dot material by intermixing / A. Catrina Bryce, John H. Marsh, Dan A. Yanson, Olek P. Kowalski and Shin-Sung Kim -- Optical characterization of hierarchically self-assembled GaAs/AlGaAs quantum dots / F. Marabelli, A. Rastelli, O. G. Schmidt, G. Beaurin, M. Geddo and G. Guizzetti -- Virtual fabrication of small Ga-As/P and In-As/P clusters with pre-designed electronic pattern structure / Liudmila A. Pozhar, Alan T. Yeates, Frank Szmulowicz and William C. Mitchel -- Thermal stability of InGaAs quantum dots under large temperature transients / R. Rangarajan, V. C. Elarde and J. J. Coleman -- Structural and optical effects of capping layer material and growth rate on the properties of self-assembled InAs quantum dot structures / Gabriel Agnello, Vadim Tokranov, Michael Yakimov, Matthew Lamberti, Yuegui Zheng and Serge Oktyabrsky -- Vertical and in-plane electrical transport in InAs/InP semiconductor nanostructures / K. O. Vicaro, J. R. R. Bortoleto, H. R. Gutierrez, L. Nieto, A. A. G. von Zuben, A. C. Seabra, P. A. Schulz and M. A. Cotta -- Structural investigation of InAs/InGaAs/Inp nanostructures : origin and stability of nanowires / L. Nieto, H. R. Gutierrez, J. R. R. Bortoleto, R. Magalhaes-Paniago and M. A. Cotta -- Electric field enhancement of dark current generation in detectors / James P. Lavine -- Longitudinal modes in InAlGaAs/AlGaAs high-power laser diodes / B. S. Passmore, Y. C. Chua, M. O. Manasreh and J. W. Tomm -- Heterostructures with strained InGaAs quantum wells for RCE photodiode applications in the 1.8-2 [mu]m spectral range / Jadwiga Zynek, Agata Jasik, Jaroslaw Gaca, Marek Wojcik, Wlodzimierz Strupinski, Jaroslaw Rutkowski, Artur Wnuk and Krzysztof Klima -- Good temperature performances of 870 nm resonant cavity light emitting diode (RCLED) / Lih-Wen Laih, Yi-Hao Wu, Li-Hong Laih, Rong-Moo Hong, Hao-Chung Guo, Jung-Lung Yu, Yu-Hsiang Huang, Yi-An Chang, Ren-Jiun Chang, Chun-Hui Yang and I-Tsung Wu -- Electrical measurement of recombination lifetime in blue light emitting diodes / M. A. Awaah, R. Nana and K. Das -- Application of low temperature InP wafer bonding towards optical add/drop multiplexer realization / J. Arokiaraj, S. Vicknesh and A. Ramam -- Short-period strain-balanced GaAs[subscript 1-x]N[subscript x]/InAs(N) superlattices lattice-matched to InP(001) : a new material for 0.4-0.6 eV mid IR applications / L. Bhusal, A. Alemu and A. Freundlich -- The Er[superscript 3+] and Yb[superscript 3+]-related emission from Er,Yb co-implanted Al[subscript 0.70]Ga[subscript 0.30]As/GaAs substrates prepared by MOCVD method / Tomoyuki Arai and Shin-ichiro Uekusa -- Annealing effects of ZnO nanorods on DC inorganic electroluminescent device characteristics / Shinya Sasaki, Hiroshi Miyashita, Takashi Kimpara, Tomomasa Satoh and Takashi Hirate -- Zinc oxide nanocluster formation by low energy ion implantation / I. Muntele, P. Thevenard, C. Muntele, B. Chhay and D. Ila -- Fabrication of ZnO coasted ZnS:Mn[superscript 2+] nanoparticles / Shinji Ishizaki, Yusuke Kusakari and Masakazu Kobayashi -- Defect structures in undoped and doped ZnO films studied by solid state diffusion / Haruki Ryoken, Isao Sakaguchi, Takeshi Ohgaki, Naoki Ohashi, Yutaka Adachi and Hajime Haneda -- Electrical properties of ZnO thin films deposited by pulsed laser deposition / S. P. Heluani, G. Simonelli, M. Villafuerte, G. Juarez, A. Tirpak, G. Braunstein and F. Vignolo -- Growth and characterization of ZnO nanonail / H. W. Seo, D. Wang, Y. Tzeng, N. Sathitsuksanoh, C. C. Tin, M. J. Bozack, J. R. Williams and M. Park -- Synthesis and characterization of ZnO nanoparticles / I. U. Abhulimen, X. B. Chen, J. L. Morrison, V. K. Rangari, L. Bergman and K. Das -- Raman spectroscopy of V and Co doped ZnO ceramics and thin films / K. Samanta, N. Awasthi, B. Sundarakannan, P. Bhattacharya and R. S. Katiyar -- Intersubband transitions in GaN/Al[subscript x]Ga[subscript 1-x]N multi quantum wells / E. A. DeCuir, Jr., Y. C. Chua, B. S. Passmore, J. Liang, M. O. Manasreh, J. Xie, H. Morkoc, A. Asghar, I. T. Ferguson and A. Payne -- Electrical and dielectric behavior of Pb(Mg[subscript 1/4]Ni[subscript 1/4]W[subscript 1/2])O[subscript 3] ceramics / Adolfo Franco, Jr. -- Preparation and luminescent properties of SrS:Ce by addition of sulphur as a co-activator in SrSO[subscript 4]:Ce(SO[subscript 4])[subscript 2].4H[subscript 2]O by carbothermal reduction / P. Thiyagarajan, M. Kottaisamy, K. Sethupathi and M. S. R. Rao -- InAs quantum dots for optoelectronic device applications / K. Stewart, S. Barik, M. Buda, H. H. Tan and C. Jagadish -- Superfluorescence of ion beam synthesized dense-packed embedded CdSe nanoclusters / H. Karl, I. Grosshans, P. Huber and B. Stritzker -- Synthesis of highly photoluminescent CdTe nanocrystals and their incorporation into glass matrices / Norio Murase and Chunliang Li -- The general synthesis of nanostructured V/VI semiconductors / Paul Christian and Paul O'Brien -- Ultrashort pulse generation with semiconductor modelocked lasers using saturable absorbers based on intersubband transitions in GaN/AlGaN quantum wells / Faisal R. Ahmad, Paul George, Jahan Dawlaty, Fahan Rana and William J. Shaff -- Spectroscopic analysis of external stresses in semiconductor quantum-well materials / Jens W. Tomm, Mark L. Biermann, B. S. Passmore, M. O. Manasreh, A. Gerhardt and Tran Q. Tien -- Processing of deeply etched GaAs/AlGaAs quantum cascade lasers with grating structures / S. Golka, M. Austerer, C. Pflugl, W. Schrenk and G. Strasser -- Zener tunneling of light in an optical superlattice / Mher Ghulinyan, Zeno Gaburro, Lorenzo Pavesi, Claudio J. Oton, Costanza Toninelli and Diederik S. Wiersma -- Dispersion engineering of three-dimensional silicon photonic crystals : fabrication and applications / Sriram Venkataraman, Garrett Schneider, Janusz Murakowski, Shouyan Shi and Dennis W. Prather -- Correlation between photoreflectance spectra and electrical characteristics of InP/GaAsSb double heterojunction bipolar transistors / Hiroki Sugiyama, Yasuhiro Oda, Haruki Yokoyama, Takashi Kobayashi, Masahiro Uchida and Noriyuki Watanabe -- Roughness analysis of episurfaces grown on ion-beam processed GaSb substrates / K. Krishnaswami, D. B. Fenner, S. R. Vangala, C. Santeufemio, M. Grzesik, L. P. Allen, G. Dallas and W. D. Goodhue -- Improved performance of GaSb-based MIR photodetectors through electrochemical passivation in sulphur containing solutions / A. Piotrowska, E. Papis, K. Golaszewska, R. Lukasiewicz, E. Kaminska, T. T. Piotrowski, R. Kruszka, A. Kudla, J. Rutkowski, J. Szade, A. Winiarski, A. Wawro and M. Aleszkiewicz -- High speed Ge photodetectors on Si platform for GHz optical communications in C+L bands / Jifeng Liu, Jurgen Michel, Douglas D. Cannon, Wojciech Giziewicz, D. Pan, David T. Danielson, Samerkhae Jongthammanurak, John Yasaitis, Kazumi Wada, Clifton G. Fonstad and Lionel C. Kimerling -- High quality MPCVD epitaxial diamond film for power device application / Jie Yang, Weixiao Huang, T. P. Chow and James E. Butler -- Prospect for III-nitride heterojunction MOSFET structures and devices / M. A. L. Johnson, D. W. Barlage and Dave Braddock --
• First-principles calculation of electron mobilities in ultrathin SOI MOSFETs / Matthew H. Evans, Xiaoguang Zhang, John D. Joannopoulos and Sokrates T. Pantelides -- Nickel silicide work function tuning study in metal-gate CMOS applications / Jun Yuan, Grant Z. Pan, Yu-Lin Chao and Jason C. S. Woo -- Metal-oxide semiconductor field-effect transistors using single ZnO nanowire / Young-Woo Heo, B. S. Kang, L. C. Tien, Y. Kwon, J. R. La Roche, B. P. Gila, F. Ren, S. J. Pearton and D. P. Norton -- Preparation of ultraviolet light emitting ZnO nanoparticles via a novel synthesis route / Yuntao Li, Richard D. Yang, S. Tripathy, H.-J. Sue, N. Miyatake and R. Nishimura -- ZnO spintronics and nanowire devices / David P. Norton, Young-Woo Heo, L. C. Tien, M. P. Ivill, Y. Li, B. S. Kang, Fan Ren, J. Kelly, A. F. Hebard and Stephen Pearton -- Electrical and optical properties of n-type and p-type ZnO / D. C. Look and B. Claflin -- Towards p-type doping of ZnO by ion implantation / V. A. Coleman, H. H. Tan, C. Jagadish, S. O. Kucheyev, M. R. Phillips and J. Zou -- New routes to metal chalcogenide nanostructures / Paul Christian and Paul O'Brien -- Properties of gallium selenide doped with sulfur / Valeriy G. Voevodin, Svetlana A. Bereznaya, Zoya V. Korotchenko, Aleksandr N. Morozov, Sergey Yu. Sarkisov, Nils C. Fernelius and Jonathan T. Goldstein -- Nominal PbSe nano-islands on PbTe : grown by MBE, analyzed by AFM and TEM / Peter Moeck, Mukes Kapilashrami, Arvind Rao, Kirill Aldushin, Jeahuck Lee, James E. Morris, Nigel D. Browning and Patrick J. McCann -- Optical properties of CdSe and CdTe nanoparticles embedded in SiO[subscript 2] films / P. Babu Dayal, B. R. Mehta and P. D. Paulson -- New electroluminescence spectrum from co-doped ZnS:(Mn,Si) films prepared by chemical vapor deposition with laser ablation / Makoto Ozawa, Tomomasa Satoh and Takashi Hirate -- Composition dependence of the Judd-Ofelt intensity parameters in TeO[subscript 2]-PbF[subscript 2] : Tm[superscript 3+] glasses / Idris Kabalci, Gonul Ozen, Adnan Kurt and Alphan Sennaroglu -- Growth and crystal structure of Alq3 single crystals : a new structure showing [pi]-[pi] and CH-[pi] interactions / Ali N. Rashid and Donald C. Craig -- Preparation of carbon nano-materials using arc discharge in liquid / Y. Suda, H. Kawasaki, T. Ohshima, S. Nakashima, S. Kawazoe and T. Toma -- Dopant activation in bulk germanium and germanium-on-insulator / Y.-L. Chao, S. Prussin, J. C. S. Woo and R. Scholz -- Electronic and optical properties of SiGe alloys within first-principles schemes / G. Cappellini, G. Satta, M. Palummo and G. Onida -- Ab initio calculations for the electronic spectra of cubic and hexagonal boron nitride / Guido Satta, Giancarlo Cappellini, Valerio Olevano and Lucia Reining -- Transport properties of polycrystalline SiGe thin films grown on SiO[subscript 2] / Minoru Mitsui, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano and Yasuhiro Shiraki -- Study of germanium diffusion in HfO[subscript 2] gate dielectric of MOS device application / Qingchun Zhang, Nan Wu, L. K. Bera and Chunxiang Zhu -- Site-specific formation of nanoporous silicon on micro-fabricated silicon surfaces / Fung Suong Ou, Laxmikant V. Saraf and Donald R. Baer -- Beam induced lateral epitaxy of GaAs on a GaAs/Si template / Shigeya Naritsuka, Koji Saitoh, Toshiyuki Kondo and Takahiro Maruyama -- Novel noncontact thickness metrology for partially transparent and nontransparent wafers for backend semiconductor manufacturing / Wojciech J. Walecki, Vitali Souchkov, Kevin Lai, Phuc Van, Manuel Santos, Alexander Pravdivtsev, S. H. Lau and Ann Koo -- Dielectric properties of semiconductors by TDDFT in real-space and real-time approach / Yasunari Zempo and Nobuhiko Akino -- Pt/Au and W/Pt/Au Schottky contacts to bulk n-ZnO / Kelly Ip, Brent Gila, Andrea Onstine, Eric Lambers, Young-Woo Heo, David Norton, Stephen Pearton, Jeffrey LaRoche and Fan Ren -- Preparation of SrS:Ce/ZnO core-shell nanoparticles using reverse micelle method / Yusuke Kusakari, Shinji Ishizaki and Masakazu Kobayashi -- ZnO/GaN heteroepitaxy / K. W. Jang, D. C. Oh, T. Minegishi, H. Suzuki, T. Hanada, H. Makino, M. W. Cho and T. Yao -- Near band-edge and excitonic behavior of GaAsN epilayers grown by chemical beam epitaxy / J. A. H. Coaquira, L. Bhusal, W. Zhu, A. Fotkatzikis, M.-A. Pinault, A. P. Litvinchuk and A. Freundlich -- Charge coupled cyclotron motion of electrons and holes in InGaAsN epitaxial layers / H. E. Porteanu, O. Loginenko, F. Koch, G. Dumitras, L. Geelhaar and H. Riechert -- Nitrogen induced optical phonon shift in GaN[subscript y]As[subscript 1-y] studied by Raman scattering / Li-Lin Tay, David J. Lockwood and James A. Gupta -- MBE-grown GaNAsBi matched to GaAs with 1.3-[mu]m emission wavelength / Masahiro Yoshimoto, Wei Huang and Kunishige Oe.

ISBN

1558997776

OCLC

• ocm59714962
• SCSB-5205063

Owning Institutions

Columbia University Libraries