Research Catalog

Title

Amorphous and nanocrystalline silicon science and technology--2005 : Symposium March 28-April 1, 2005, San Francisco, California, U.S.A. / editors: Robert W. Collins [and others].

Publication

Warrendale, Pa. : Materials Research Society, [2005], ©2005.

Items in the Library & Off-site

Holdings

Details

Additional Authors

• Collins, Robert W.
• Materials Research Society. Fall Meeting (2005 : San Francisco, Calif.)
• Symposium on Amorphous and Nanocrystalline Silicon Science and Technology (2005 : San Francisco, Calif.)

Description

xxii, 724 pages : illustrations; 24 cm.

Series Statement

Materials Research Society symposium proceedings ; v. 862

Uniform Title

Materials Research Society symposia proceedings ; v. 862.

Subjects

• Crystal growth > Congresses
• Solar cells > Congresses
• Semiconductor films > Congresses
• Thin film devices > Congresses
• Silicon crystals > Congresses
• Amorphous semiconductors > Congresses
• Chemical vapor deposition > Congresses
• Inhomogeneous materials > Congresses

Note

• "Symposium A, 'Amorphous and Nanocrystalline Silicon Science and Technology--2005,' [was] held March 28-April 1 at the 2005 MRS Spring Meeting in San Francisco, California ..."--Pref.

Bibliography (note)

• Includes bibliographical references and indexes.

Contents

• Urbach edge, disorder, and absorption on-set in a-Si:H / G. D. Cody -- Novel in situ and real-time optical probes to detect (surface) defect states of a-Si:H / W. M. M. Kessels, I. M. P. Aarts, J. J. H. Gielis, J. P. M. Hoefnagels and M. C. M. van de Sanden -- Correlation between powder in the plasma and stability of high rate deposited a-Si:H / Guozhen Yue, Gautam Ganguly, Baojie Yan, Jeffrey Yang and Subhendu Guha -- The role of SiH[subscript 3] diffusion in determining the surface smoothness of plasma-deposited amorphous Si thin films : an atomic-scale analysis / Mayur S. Valipa, Tamas Bakos, Eray S. Aydil and Dimitrios Maroudas -- Development of deposition phase diagrams for thin film Si:H and Si[subscript 1-x]Ge[subscript x]:H using real time spectroscopic ellipsometry / N. J. Podraza, G. M. Ferreira, C. R. Wronski and R. W. Collins -- Electronic properties of improved amorphous silicon-germanium alloys deposited by a low temperature hot wire chemical vapor deposition process / Shouvik Datta, J. David Cohen, Yueqin Xu and A. H. Mahan -- AFM morphology study of Si[subscript 1-y]Ge[subscript y]:H films deposited by LF PE CVD from silane-germane with different dilution / L. Sanchez, A. Kosarev, A. Torres, T. Felter and A. Hinskij -- Improved optical loss characteristics of PECVD silicon oxynitride films using low frequency plasma / S. Naskar, C. A. Bower, S. D. Wolter, B. R. Stoner and J. T. Glass -- Growth chemistry of nanocrystalline Si:H films / Vikram L. Dalal, Kamal Muthukrishnan, Daniel Stieler and Max Noack -- Nanocrystalline Si films and devices produced using chemical annealing with helium / Nanlin Wang and Vikram L. Dalal -- Nanocrystalline-Si thin film deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at 150[degrees]C / Sang-Myeon Han, Joong-Hyun Park, Hye-Jin Lee, Kwang-Sub Shin and Min-Koo Han -- Influence of pressure and plasma potential on high growth rate microcrystalline silicon grown by VHF PECVD / A. Gordijn, J. Francke, L. Hodakova, J. K. Rath and R. E. I. Schropp -- High density plasma processing of microcrystalline Si thin films / P. C. Joshi, A. T. Voutsas and J. W. Hartzell -- Dependence of microcrystalline silicon growth on ion flux at the substrate surface in a saddle field PECVD / Erik Johnson, Nazir P. Kherani and Stefan Zukotynski -- 'Seed layers' for the preparation of hydrogenated microcrystalline silicon with defined structural properties on glass / Christoph Ross, Yaohua Mai, Reinhard Carius and Friedhelm Finger -- Crystallographic study of the initial growth region of [mu]c-Si with different preferential orientations / Y. Sobajima, T. Sugano, T. Kitagawa, T. Toyama and H. Okamoto -- Structural and electronic properties of hydrogenated nanocrystalline silicon films made with hydrogen dilution profiling technique / Keda Wang, Daxing Han, D. L. Williamson, Brittany Huie, J. R. Weinberg-Wolf, Baojie Yan, Jeffrey Yang and Subhendu Guha -- Structure of microcrystalline solar cell materials : what can we learn from electron microscopy? / M. Luysberg and L. Houben -- Microcrystalline and nanocrystalline silicon : simulation of material properties / R. Biswas, B. C. Pan and V. Selvaraj -- Doping dependence of chlorine incorporation in SiCl[subscript 4]-based microcrystalline silicon films / Wolfhard Beyer, Reinhard Carius and Uwe Zastrow -- Low substrate temperature deposition of crystalline SiC using HWCVD / S. Klein, R. Carius, L. Houben and F. Finger -- Nanocrystalline germanium and germanium carbide films and devices / Xuejun Niu, Jeremy Booher and Vikram L. Dalal -- Real-time spectroscopic ellipsometry as an in situ probe of the growth dynamics of amorphous and epitaxial crystal silicon for photovoltaic applications / D. H. Levi, C. W. Teplin, E. Iwaniczko, Y. Yan, T. H. Wang and H. M. Branz -- A phase diagram of low temperature epitaxial silicon grown by hot-wire chemical vapor deposition for photovoltaic devices / Christine Esber Richardson, Brendan M. Kayes, Matthew J. Dicken and Harry A. Atwater -- Silicon homoepitaxy using tantalum-filament hot-wire chemical vapor deposition / Charles W. Teplin, Eugene Iwaniczko, Kim M. Jones, Robert Reedy, Bobby To and Howard M. Branz -- Growth of "new form" of polycrystalline silicon thin films synthesized by hot wire chemical vapor deposition / A. R. Middya, J.-J. Liang and K. Ghosh -- Hot-mesh chemical vapor deposition for 3C-SiC growth on Si and SiO[subscript 2] / Kanji Yasui, Jyunpei Eto, Yuzuru Narita, Masasuke Takata and Tadashi Akahane -- Polycrystalline GeC thin films deposited using a unique hollow cathode sputtering technique / R. J. Soukup, N. J. Ianno, J. S. Schrader and V. L. Dalal -- Micro-crystalline silicon-germanium thin films prepared by the multi-target RF sputtering system / Toru Ajiki, Isao Nakamura and Masao Isomura -- Poly-crystalline Ge thin films prepared by RF sputtering method for thermo photo voltaic application / Daisuke Hoshi, Isao Nakamura and Masao Isomura -- Ge growth on nanostructured silicon surfaces / Ganesh Vanamu, Abhaya K. Datye and Saleem H. Zaidi -- GaAs growth on micro and nano patterned Ge/Si[subscript 1-x]Ge[subscript x] and Si surfaces / Ganesh Vanamu, Abhaya K. Datye, Ralph L. Dawson and Saleem H. Zaidi -- Real time monitoring of the crystallization of hydrogenated amorphous silicon / Paul Stradins, David Young, Howard M. Branz, Matthew Page and Qi Wang -- Solid phase crystallization of hot-wire CVD amorphous silicon films / David L. Young, Paul Stradins, Eugene Iwaniczko, Bobby To, Bob Reedy, Yanfa Yan, Howard M. Branz, John Lohr, Manuel Alvarez, John Booske, Amy Marconnet and Qi Wang -- Suppression of nucleation during the aluminum-induced layer exchange process / Jens Schneider, Juliane Klein, Andrey Sarikov, Martin Muske, Stefan Gall and Walther Fuhs -- Correlation of in and ex situ stress to microstructures during Al-induced crystallization of PECVD amorphous silicon / S. Ray, Y. G. Lian, V. Sriram, D. J. Tucker and G. Z. Pan -- TCAD modeling of metal induced lateral crystallization of amorphous silicon / Aleksey M. Agapov, Valeri V. Kalinin, Alexandre M. Myasnikov, Vincent M. C. Poon and Bert Vermeire -- Excimer laser crystallized HWCVD thin silicon films : electron field emission / M. Z. Shaikh, K. A. O'Neill, S. K. Persheyev and M. J. Rose -- Formation of a miscibility gap in laser-crystallized poly-SiGe thin films / M. Weizman, N. H. Nickel, I. Sieber and B. Yan -- Ultra-shallow junction formation by a non-melting process : double-pulsed green laser annealing / Toshio Kudo, Susumu Sakuragi and Kazunori Yamazaki -- Application of field-enhanced rapid thermal annealing to activation of doped polycrystalline Si thin films / B. S. So, Y. H. You, H. J. Kim, Y. H. Kim, J. H. Hwang, D. H. Shin, S. R. Ryu, K. Choi and Y. C. Kim -- Effects of post annealing and material stability on undoped and n[superscript +] nc-Si:H films deposited at 75[degrees]C using 13.56 MHz PECVD / Czang-Ho Lee, Andrei Sazonov and Arokia Nathan -- Annealing characteristics of Al-doped hydrogenated microcrystalline cubic silicon carbide films / S. Miyajima, A. Yamada and M. Konagai -- Initial stage hydrogen movement and IR absorption proportionality constants in hot-wire deposited SiN[subscript 1.2]:H during high-temperature annealing / H. D. Goldbach, V. Verlaan, C. H. M. van der Werf, W. M. Arnoldbik, H. C. Rieffe, I. G. Romijn, A. W. Weeber and R. E. I. Schropp -- Electrodeposition of fluorescent Si nanomaterial from acidic sodium silicate solutions / Laila H. Abuhassan and Munir H. Nayfeh -- High-yield synthesis of luminescent silicon quantum dots in a continuous flow nonthermal plasma reactor / L. Mangolini, E. Thimsen and U. Kortshagen -- Experimental study of silane plasma nanoparticle formation in amorphous silicon thin films / S. Thompson, C. R. Perrey, T. J. Belich, C. Blackwell, C. B. Carter, J. Kakalios and U. Kortshagen --
• Effects of N[subscript 2]O fluence on the PECVD-grown Si-rich SiO[subscript x] with buried Si nanocrystals / Chun-Jung Lin, Hao-Chung Kuo, Chia-Yang Chen, Yu-Lun Chueh, Li-Jen Chou, Chih-Wei Chang, Eric Wei-Guang Diau and Gong-Ru Lin -- CO[subscript 2] laser annealing synthesis of silicon nanocrystals buried in Si-rich SiO[subscript 2] / Chun-Jung Lin, Yu-Lun Chueh, Li-Jen Chou, Hao-Chung Kuo and Gong-Ru Lin -- Charging effect of a nc-Si in a SiO[subscript 2] layer observed by scanning probe microscopy / J. M. Son, J. M. Kim, Y. Khang, E. H. Lee, S. I. Park, Y. S. Kim and C. J. Kang -- Conductance fluctuations in amorphous silicon nanoparticles / T. J. Belich, Z. Shen, C. Blackwell, S. A. Campbell and J. Kakalios -- Study of the oxidation of polycrystalline SiGe : formation of Ge nanocrystals and their related luminescence / A. C. Prieto, M. Avella, J. Jimenez, A. Rodriguez, J. Sangrador, T. Rodriguez and A. Kling -- Formation of antimony 1D-nanostructures on Si (5 5 12) surface / S. M. Shivaprasad, Mahesh Kumar, Amish G. Joshi and Vinod Kumar Paliwal -- Fabrication of one-dimensional silicon nanowires based on proximity effects of electron-beam lithography / S. F. Hu and C. L. Sung -- Fabrication of silicon nanowire network in aluminum thin films / Vincent H. Liu, Husam H. Abu-Safe, Hameed A. Naseem and William D. Brown -- Wiring and introduction of single silicon nanocrystals into multi-walled carbon nanotubes / Vladimir Svrcek, Francois Le Normand, Ovidui Ersen, Coung Pham-Huu, Dominique Begin, Benoit Louis and Marc-Jaques Ledoux -- Metal induced growth of poly-Si solar cells and silicide nanowires by use of multiple catalyst layers / Joondong Kim, Chunhai Ji and Wayne A. Anderson -- New light trapping in thin film solar cells using textured photonic crystals / Lirong Zeng, Yasha Yi, Ching-yin Hong, Xiaoman Duan and Lionel C. Kimerling -- Advances in amorphous silicon integrated photonics science and technology / G. P. Halada, Samrat Chawda, J. Mawyin, R. J. Tonucci, A. H. Mahan and C. M. Fortmann -- Fabrication of nano-crystalline porous silicon on Si substrates by a plasma enhanced hydrogenation technique / Y. Abdi, P. Hashemi, F. Karbassian, F. D. Nayeri, A. Behnam, S. Mohajerzadeh, J. Koohsorhki, M. D. Robertson and E. Arzi -- Application of spectroscopic ellipsometry and infrared spectroscopy for the real-time control and characterization of a-Si:H growth in a-Si:H/c-Si heterojunction solar cells / Hiroyuki Fujiwara and Michio Kondo -- High-performance amorphous silicon emitter for crystalline silicon solar cells / T. H. Wang, E. Iwaniczko, M. R. Page, Q. Wang, D. H. Levi, Y. Yan, Y. Xu and H. M. Branz -- Bifacial silicon heterojunction solar cell with deposited back surface field / H. D. Goldbach, A. Bink and R. E. I. Schropp -- Electron field emission from SiC/Si heterostructures formed by carbon implantation into silicon and etching of the top silicon layer / Yumei Xing, Jihua Zhang, Yuehui Yu, Zhaorui Song and Dashen Shen -- Application of SC-simul for numerical modeling of the opto-electronic properties of heterojunction diodes / R. Bruggemann, M. Rosch, S. Tardon and G. H. Bauer -- Characterization of amorphous silicon by secondary ion mass spectrometry / Yupu Li, Shaw Wang, Xue-Feng Lin and Luncun Wei -- Observation of a hydrogen doublet site in high defect density as-grown a-Si:H by [superscript 1]H NMR / D. Bobela, T. Su, P. C. Taylor and G. Ganguly -- The nature of native and light induced defect states in i-layers of high quality a-Si:H solar cells derived from dark forward-bias current-voltage characteristics / J. Deng, M. L. Albert, J. M. Pearce, R. W. Collins and C. R. Wronski -- The creation and annealing kinetics of fast light induced defect states created by 1 sun illumination in a-Si:H / M. L. Albert, J. Deng, X. Niu, J. M. Pearce, R. W. Collins and C. R. Wronski -- Light-intensity dependence of the Staebler-Wronski effect in a-Si:H with various densities of defects / Minoru Kumeda, Ryohei Sakai, Akiharu Morimoto and Tatsuo Shimizu -- Effect of Fermi level position in intrinsic a-Si:H on the evolution of defect states under light exposure / M. Zeman, V. Nadazdy, R. Durny and J. W. Metselaar -- Light-soaking effects on the open-circuit voltage of a-Si:H solar cells / Jianjun Liang, E. A. Schiff, S. Guha, B. Yan and J. Yang -- The effects of hydrogen profiling and of light-induced degradation on the electronic properties of hydrogenated nanocrystalline silicon / A. F. Halverson, J. J. Gutierrez, J. D. Cohen, Baojie Yan, Jeffrey Yang and Subhendu Guha -- Comparison of the effect of light soaking in porous silicon and a-Si:H / N. P. Mandal and S. C. Agarwal -- Optical properties of amorphous silicon-yttrium films / Alexandra N. Shmyryeva and Tetyana V. Semikina -- Stark splitting in photoluminescence spectra of Er in a-Si:H / Minoru Kumeda, Mitsuo Takahashi, Akiharu Morimoto and Tatsuo Shimizu -- Photoluminescence and electroluminescence properties of FeSi[subscript 2]-Si structures formed by MEVVA implantation / C. F. Chow, Y. Gao, S. P. Wong, N. Ke, Q. Li, W. Y. Cheung, G. Shao, M. A. Lourenco and K. P. Homewood -- Computer modelling of non-equilibrium multiple-trapping and hopping transport in amorphous semiconductors / C. Main, J. M. Marshall, S. Reynolds, M. J. Rose and R. Bruggemann -- Multiple-trapping model with Meyer-Neldel effect and field-dependent effects : time-of-flight simulations for a-Si:H / Jesse Maassen, Arthur Yelon, Louis-Andre Hamel and Wen Chao Chen -- Transport and Meyer-Neldel rule in microcrystalline silicon films / Steve Reynolds, Vlad Smirnov, Friedhelm Finger, Charlie Main and Reinhard Carius -- Metastable changes in the photoconductive properties of microcrystalline silicon upon heat treatment / R. Bruggemann -- PECVD grown hydrogenated polymorphous silicon studied using current transient spectroscopies in PIN diodes / Vibha Tripathi, Y. N. Mohapatra and P. Roca i Cabarrocas -- Influence of hydrogen plasma on electrical and optical properties of transparent conductive oxides / L. Raniero, A. Goncalves, A. Pimentel, I. Ferreira, S. Zhang, L. Pereira, H. Aguas, E. Fortunato and R. Martins -- Improved stability of hydrogenated amorphous silicon solar cells fabricated by triode-plasma CVD / H. Sonobe, A. Sato, T. Fujibayashi, S. Shimizu, T. Matsui, A. Matsuda and M. Kondo -- Highly and rapidly stabilized protocrystalline silicon multilayer solar cells / Koeng Su Lim, Joong Hwan Kwak, Seong Won Kwon and Seung Yeop Myong -- High efficiency solar cells with intrinsic microcrystalline silicon absorbers deposited at high rates by VHF-PECVD / Yaohua Mai, Stefan Klein, Reinhard Carius, Xinhua Geng and Friedhelm Finger -- Characterization of the silicon-based thin film multi-junction solar cells / Yoshihiro Hishikawa -- Temperature-dependent open-circuit voltage measurements and light-soaking in hydrogenated amorphous silicon solar cells / Jianjun Liang, E. A. Schiff, S. Guha, B. Yan and J. Yang -- Use of transparent conductive oxide materials with low indices of refraction in amorphous silicon-based solar cell technology / Scott J. Jones, Joachim Doehler, Tongyu Liu, David Tsu, Jeff Steele, Rey Capangpangan and Masat Izu -- Improved back reflector for high efficiency hydrogenated amorphous and nanocrystalline silicon based solar cells / Baojie Yan, Jessica M. Owens, Chun-Sheng Jiang, Jeffrey Yang and Subhendu Guha -- Characterization of silicon thin film deposited by E-beam evaporator for flexible display / In-Hyuk Song, Sang-Myeon Han, Jung-Hyun Park and Min-Koo Han -- Low hydrogen concentration silicon nitride as a gate dielectric of TFTs for flexible display application / Joong Hyun Park, Chang Yeon Kim, Kwang Sub Shin, Sang Geun Park and Min Koo Han -- Electrolyte-gate a-Si:H thin film transistors / Dina I. Goncalves, Duarte M. Prazeres, Virginia Chu and Joao P. Conde --
• The hysteresis analysis of hydrogenated amorphous silicon thin film transistors for an active matrix organic light emitting diode / Jae-Hoon Lee, Bong-Hyun You, Kwang-Sub Shin and Min-Koo Han -- Active pixel TFT arrays for digital fluoroscopy in a-Si:H technology / Jackson Lai, Nader Safavian, Arokia Nathan and John A. Rowlands -- High electron mobility (1̃50 cm[superscript 2]/Vs) PECVD nanocrystalline silicon top-gate TFTs at 260[degrees]C / Czang-Ho Lee, Andrei Sazonov and Arokia Nathan -- Gate oxide integrity for polysilicon thin-film transistors : a comparative study for ELC, MILC, and SPC crystallized active polysilicon layer / D. C. Choi, B. D. Choi, J. Y. Jung, H. H. Park, J. W. Seo, K. Y. Lee and H. K. Chung -- Threshold voltage optimization with ion shower implantation for polysilicon thin-film transistors / B. D. Choi, D. C. Choi, C. Y. Im, K. H. Choi, C. H. Yu, R. Kakkad and H. K. Chung -- Low temperature metal-free fabrication of polycrystalline Si and Ge TFTs by PECVD hydrogenation / Pouya Hashemi, Jaber Derakhshandeh, Bahman Hekmatshoar, Shamsoddin Mohajerzadeh, Yaser Abdi and Michael D. Robertson -- Effect of the hydrogen content in the optical properties and etching of silicon nitride films deposited by PECVD for uncooled microbolometers / R. Ambrosio, A. Torres, A. Kosarev, M. Landa and A. Heredia -- Spectral sensitivity and color selectivity in muitilayer stacked devices / P. Louro, M. Vieira, A. Fantoni, M. Fernandes, G. Lavareda and C. Nunes de Carvalho -- Amorphous silicon based p-i-i-n structure for color sensor / S. Zhang, L. Raniero, E. Fortunato, L. Pereira, H. Aguas, I. Ferreira and R. Martins -- Image and color sensitive detector based on double p-i-n/p-i-n a-SiC:H photodiode / M. Vieira, M. Fernandes, P. Louro, A. Fantoni, Y. Vygranenko, G. Lavareda and C. N. Carvalho -- Effect of the load resistance in the linearity and sensitivity of MIS position sensitive detectors / H. Aguas, L. Pereira, L. Raniero, E. Fortunato and R. Martins -- Radiation hard amorphous silicon particle sensors / N. Wyrsch, C. Miazza, S. Dunand, C. Ballif, A. Shah, M. Despeisse, D. Moraes and P. Jarron -- Two-dimensional a-Si:H/a-SiC:H n-i-p sensor array with ITO/a-SiN[subscript x] antireflection coating / Yu. Vygranenko, J. H. Chang and A. Nathan -- Low temperature thin-film silicon diodes for consumer electronics / Qi Wang, Scott Ward, Anna Duda, Jian Hu, Paul Stradins, Richard S. Crandall, Howard M. Branz, Frank Jeffrey, Hao Lou, Craig Perlov, Warren Jackson, Ping Mei and Carl Taussig.

ISBN

1558998152

OCLC

• ocm62072805
• SCSB-5223858

Owning Institutions

Columbia University Libraries