Research Catalog

Title

Microscopy of semiconducting materials : proceedings of the 14th Conference : April 11-14, 2005, Oxford, UK / A.G. Cullis, J.L. Hutchison.

Publication

Berlin ; New York : Springer, [2005], ©2005.

Items in the Library & Off-site

Holdings

Details

Additional Authors

• Cullis, A. G.
• Hutchison, J. L.
• Conference on Microscopy of Semiconducting Materials (14th : 2005 : Oxford, England)

Description

xvi, 537 pages : illustrations; 24 cm.

Series Statement

Springer proceedings in physics ; v. 107

Uniform Title

Springer proceedings in physics ; v. 107.

Subjects

• Semiconductors > Congresses
• Microscopy > Congresses

Bibliography (note)

• Includes bibliographical references and indexes.

Contents

• Structural properties of GaN quantum dots / B. Daudin, J.-L. Rouviere, D. Jalabert, J. Coraux, V. Favre-Nicolin, H. Renevier, M. H. Cho, K. B. Chung, D. W. Moon, M. G. Proietti, J. M. Llorens, N. Garro, A. Cros and A. Garcia-Cristobal -- Stranski-Krastanov growth for InGaN/GaN : wetting layer thickness changes / N. K. van der Laak, R. A. Oliver, M. J. Kappers, C. McAleese and C. J. Humphreys -- Investigation of In[subscript x]Ga[subscript 1-x]N islands with electron microscopy / A. Pretorius, T. Yamaguchi, M. Schowalter, R. Kroger, C. Kubel, D. Hommel and A. Rosenauer -- First stage of nucleation of GaN on (0001) sapphire / Y. B. Kwon, J. H. Je, P. Ruterana and G. Nouet -- InGaN-GaN quantum wells : their luminescent and nano-structural properties / J. S. Barnard, D. M. Graham, T. M. Smeeton, M. J. Kappers, P. Dawson, M. Godfrey and C. J. Humphreys -- Evolution of InGaN/GaN nanostructures and wetting layers during annealing / R. A. Oliver, N. K. van der Laak, M. J. Kappers and C. J. Humphreys -- Origins and reduction of threading dislocations in GaN epitaxial layers / S. Mahajan -- Oxygen segregation to nanopipes in gallium nitride / M. Hawkridge and D. Cherns -- Strain relaxation in (Al,Ga)N/GaN heterostructures / P. Vennegues, J. M. Bethoux, Z. Bougrioua, M. Azize, P. De Mierry and O. Tottereau -- A TEM study of AlN interlayer defects in AlGaN/GaN heterostructures / P. D. Cherns, C. McAleese, M. J. Kappers and C. J. Humphreys -- Reduction of threading dislocation density using in-situ SiN[subscript x] interlayers / R. Datta, M. J. Kappers, J. S. Barnard and C. J. Humphreys -- The nucleation structure for cracks in AlGaN epitaxial layers / R. T. Murray, P. J. Parbrook, G. Hill and I. M. Ross -- Microstructural and optical characterisation of InN layers grown by MOCVD / P. Singh, P. Ruterana, G. Nouet, A. Jain, J. M. Redwing and M. Wojdak -- Structural properties of InN thin films grown with variable growth conditions on GaN/Al[subscript 2]O[subscript 3] by plasma-assisted MBE / A. Delimitis, Ph. Komninou, Th. Kehagias, Th. Karakostas, E. Dimakis, A. Georgakilas and G. Nouet -- Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates / S. Saravanan, E. G. Keim, G. J. M. Krijnen and M. Elwenspoek -- Characterization and structuring of nitride-based heterostructures for vertical-cavity surface-emitting lasers / R. Kroger, C. Kruse, J. Dennemarck, D. Hommel and A. Rosenauer -- Characterization of defects in ZnS and GaN / J. Deneen, S. Kumar, C. R. Perrey and C. B. Carter -- Use of Moire fringe patterns to map relaxation in SiGe on insulator structures fabricated on SIMOX substrates / A. Domenicucci, S. Bedell, R. Roy, D. K. Sadana and A. Mocuta -- TEM measurement of the epitaxial stress of Si/SiGe lamellae prepared by FIB / M. Cabie, G. Benassayag, A. Rocher, A. Ponchet, J. M. Hartmann and F. Fournel -- Strain relaxation of SiGe/Si heterostructures by helium ion implantation and subsequent annealing : helium precipitates acting as dislocation sources / Norbert Hueging, Martina Luysberg, Knut Urban, Dan Buca, Bernd Hollaender, Siegfried Mantl, Matcio J. Morschbacher, Paulo F. P. Fichtner, Roger Loo and Matty Caymax -- TEM investigation of Si/Ge multilayer structure incorporated into MBE grown Si whiskers / N. Zakharov, P. Werner, G. Gerth, L. Schubert, L. Sokolov and U. Gosele -- Local compositional analysis of GeSi/Si nanoclusters by scanning Auger microscopy / G. A. Maximov, D. E. Nikolitchev and D. O. Filatov -- A study of processed and unprocessed dual channel Si/SiGe MOSFET device structures using FIB and TEM / A. C. K. Chang, D. J. Norris, I. M. Ross, A. G. Cullis, S. H. Olsen and A. G. O'Neill -- Novel TEM method for large-area analysis of misfit dislocation networks in semiconductor heterostructures / E. Spiecker, J. Schone, S. Rajagopalan and W. Jager -- Beta to alpha transition and defects on SiC on Si grown by CVD / F. M. Morales, Ch. Forster, O. Ambacher and J. Pezoldt -- Strain relaxation and void reduction in SiC on Si by Ge predeposition / F. M. Morales, P. Weih, Ch. Wang, Th. Stauden, O. Ambacher and J. Pezoldt -- Defect generation in high In and N content GaInNAs quantum wells : unfaulting of Frank dislocation loops / M. Herrera, D. Gonzalez, J. G. Lozano, M. Hopkinson, M. Gutierrez, P. Navaretti, H. Y. Liu and R. Garcia -- Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy / M. W. Fay, Y. Han, S. V. Novikov, K. W. Edmonds, K. Wang, B. L. Gallagher, R. P. Campion, C. T. Foxon and P. D. Brown -- TEM determination of the local concentrations of substitutional and interstitial Mn and antisite defects in ferromagnetic GaMnAs / F. Glas, G. Patriarche, L. Thevenard and A. Lemaitre -- First-principles calculations of 002 structure factors for electron scattering in strained In[subscript x]Ga[subscript 1-x]As / A. Rosenauer, M. Schowalter, F. Glas and D. Lamoen -- Structural characterisation of MBE grown zinc-blende Ga[subscript 1-x]Mn[subscript x]N/GaAs(001) as a function of Ga flux / Y. Han, M. W. Fay, P. D. Brown, S. V. Novikov, K. W. Edmonds, B. L. Gallagher, R. P. Campion and C. T. Foxon -- Magic matching in semiconductor heterojunctions / B. Pecz, A. Barna, V. Heera and W. Skorupa -- Changes in plasmon peak position in a GaAs/In[subscript 0.2]Ga[subscript 0.8]As structure / R. Beanland, A. M. Sanchez, A. J. Papworth, M. H. Gass and P. J. Goodhew -- Investigation of the electrical activity of dislocations in ZnO epilayers by transmission electron holography / E. Muller, P. Kruse, D. Gerthsen, R. Kling and A. Waag -- A TEM study of Mn-doped ZnO layers deposited by RF magnetron sputtering on (0001) sapphire / M. Abouzaid, P. Ruterana, G. Nouet, C. Liu, F. Yun, B. Xiao, S.-J. Cho, Y.-T. Moon and H. Morkoc -- Aberration-corrected HREM/STEM for semiconductor research / C. J. D. Hetherington, D. J. H. Cockayne, R. C. Doole, J. L. Hutchison, A. I. Kirkland and J. M. Tilchmarsh -- Spherical aberration correction and exit-plane wave function reconstruction : synergetic tools for the atomic-scale imaging of structural imperfections in semiconductor materials / K. Tillmann, A. Thust, L. Houben, M. Luysberg, M. Lentzen and K. Urban -- Strain mapping from HRTEM images / P. L. Galindo, A. Yanez, J. Pizarro, E. Guerrero, T. Ben and S. I. Molina -- Quantification of the influence of TEM operation parameters on the error of HREM image matching / J. Pizarro, E. Guerrero, P. Galindo, A. Yanez, T. Ben and S. I. Molina -- ConceptEM : a new method to quantify solute segregation to interfaces or planar defect structures by analytical TEM and applications to inversion domain boundaries in doped zinc oxide / T. Walther, A. Recnik and N. Daneu -- Electron holography of doped semiconductors : when does it work and is it quantitative? / R. E. Dunin-Borkowski, A. C. Twitchett, P. A. Midgley, M. R. McCartney, T. Kasama, D. Cooper and P. K. Somodi -- Why does a p-doped area show a higher contrast in electron holography than a n-doped area of the same dopant concentration? / A. Lenk, U. Muehle and H. Lichte -- Interference electron microscopy of reverse-biased p-n junctions / P. F. Fazzini, P. G. Merli, G. Pozzi and F. Ubaldi -- Off-axis electron holography of focused ion beam milled GaAs and Si p-n junctions / D. Cooper, A. C. Twitchett, I. Farter, D. A. Ritchie, R. E. Dunin-Borkowski and P. A. Midgley -- Towards quantitative electron holography of electrostatic potentials in doped semiconductors / P. K. Somodi, R. E. Dunin-Borkowski, A. C. Twitchett, C. H. W. Barnes and P. A. Midgley -- Three-dimensional analysis of the dopant potential of a silicon p-n junction by holographic tomography / A. C. Twitchett, T. J. V. Yates, P. K. Somodi, S. B. Newcomb, R. E. Dunin-Borkowski and P. A. Midgley -- Ab initio computation of the mean inner Coulomb potential for technologically important semiconductors / M. Schowalter, A. Rosenauer, D. Lamoen, P. Kruse and D. Gerthsen --
• Electron beam induced deposition of position and size controlled structures on the nanometre scale / K. Furuya, K. Mitsuishi, M. Shimojo, M. Song, M. Tanaka and M. Takeguchi -- The structure of coherent and incoherent InAs/GaAs quantum dots / D. Zhi, M. J. Hytch, R. E. Dunin-Borkowski, P. A. Midgley, D. W. Pashley, B. A. Joyce and T. S. Jones -- Electron microscopy and optical spectroscopy of single InAs/InP quantum dots / D. Chithrani, D. D. Perovic, R. L. Williams, J. Lefebvre, P. J. Poole and G. C. Aers -- Vertical correlation-anticorrelation transition in InAs/GaAs quantum dot structures grown by molecular beam epitaxy / M. Gutierrez, M. Hopkinson, M. Herrera, D. Gonzalez and R. Garcia -- Effect of annealing on anticorrelated InGaAs/GaAs quantum dots / M. Gutierrez, M. Hopkinson, A. I. Tartakovskii, M. S. Skolnick, M. Herrera, J. Gonzalez and R. Garcia -- Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra / A. M. Sanchez, M. H. Gass, A. J. Papworth, R. Beanland, V. Drouot and P. J. Goodhew -- Structural analysis of the effects of a combined InAlAs-InGaAs capping layer in 1.3-[mu]m InAs quantum dots / C. M. Tey, A. G. Cullis, H. Y. Liu, I. M. Ross and M. Hopkinson -- Microstructural studies of InAs/GaAs self-assembled quantum dots grown by selective area molecular beam epitaxy / J. C. C. Lin, I. M. Ross, P. W. Fry, A. I. Tartakoskii, R. S. Kolodka, R. Hogg, M. Hopkinson, A. G. Cullis and M. S. Skolnick -- Chemical composition and strain distribution of InAs/GaAs(001) stacked quantum rings / T. Ben, A. M. Sanchez, S. I. Molina, D. Granados, J. M. Garcia and S. Kret -- In distribution in InGaAs quantum wells and quantum islands / D. Litvinov, D. Gerthsen, A. Rosenauer, T. Passow, M. Grun, C. Klingshirn and M. Hetterich -- Activation energy for surface diffusion in GaInNAs quantum wells / M. Herrera, D. Gonzalez, J. G. Lozano, M. Hopkinson, M. Gutierrez, P. Navarelti, H. Y. Liu and R. Garcia -- Growth and surface structure of silicon nanowires observed in real time in the electron microscope / F. M. Ross, J. Tersoff, S. Kodambaka and M. C. Reuter -- Self-catalytic growth of gallium nitride nanoneedles under Ga-rich conditions / Andrew S. W. Wong, Grim W. Ho, Pedro M. F. J. Costa, Rachel A. Oliver and Colin J. Humphreys -- Nanocontacts fabricated by focused ion beam : characterisation and application to nanometre-sized materials / F. Hernandez, O. Casals, A. Vila, J. R. Morante, A. Romano-Rodriguez, M. Abid, J.-P. Abid, S. Valizadeh, K. Hjort, J.-P. Collin and A. Jouati -- Cross-sectional studies of epitaxial growth of InP and GaP nanowires on Si and Ge / M. A. Verheijen, E. P. A. M. Bakkers, A. R. Balkenende, A. L. Roest, M. M. H. Wagemans, M. Kaiser, H. J. Wondergem and P. C. J. Graat -- Quantitative measurements of the inhomogeneous strain field of stacked self-assembled InAs/InP(001) quantum wires by the peak finding method / T. Ben, S. I. Molina, R. Garcia, D. Fuster, M. U. Gonzalez, L. Gonzalez, Y. Gonzalez and S. Kret -- Measurement of the mean inner potential of ZnO nanorods by transmission electron holography / E. Muller, P. Kruse, D. Gerthsen, A. Rosenauer, M. Schowalter, D. Lamoen, R. Kling and A. Waag -- Quantum effects in band gap-modulated amorphous carbon superlattices / V. Stolojan, P. Moreau, M. J. Goringe and S. Ravi P. Silva -- Structure of rolled-up semiconductor nanotubes / N. Y. Jin-Phillipp, Ch. Deneke, J. Thomas, M. Kelsch, R. Songmuang, M. Stoffel and O. G. Schmidt -- Defects and interfaces in nanoparticles / C. R. Perrey, J. Deneen and C. B. Carter -- TEM characterization of magnetic Sm- and Co-nanocrystals in SiC / J. Biskupek, U. Kaiser, H. Lichte, A. Lenk, G. Pasold and W. Witthuhn -- Microscopy of nanoparticles for semiconductor devices / J. Deneen, C. R. Perrey, Y. Ding, A. Bapat, S. A. Campbell, U. Kortshagen and C. B. Carter -- Structural and electrophysical properties of a nanocomposite based upon the Si-SiO[subscript 2] system / L. M. Sorokin, V. I. Sokolov, A. E. Kalmykov and L. V. Grigoryev -- HRTEM and XRD analysis of P6mm and Ia3d double gyroidal WO[subscript 3] structures / E. Rossinyol, J. Arbiol, F. Peiro, A. Cornet, J. R. Morante, L. A. Solovyov, B. Tian and D. Zhao -- Research highlights and impacts upon industry for nanoelectronics in the university system of Taiwan / You-Lin Wu, Huey-Liang Hwang and Chuen-Horng Tsai -- TEM investigations of epitaxial high-[kappa] dielectrics on silicon / E. Bugiel, H. J. Osten, A. Fissel, O. Kirfel and M. Czernohorsky -- Damage layer in silica-based low-k material induced by the patterning plasma process studied by energy-filtered TEM / O. Richard, F. Iacopi, Zs. Tokei and H. Bender -- Measurement of field-emission properties of a single crystal silicon emitter using scanning electron microscopy / T. C. Cheng, H. T. Hsueh, W. J. Huang, M. N. Chang, J. S. Wu and S. C. Kung -- Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon / D. J. Stowe, K. J. Fraser, S. A. Galloway, S. Senkader, R. J. Falster and P. R. Wilshaw -- On the mechanism of {113}-defect formation in Si / L. I. Fedina, S. A. Song, A. L. Chuvilin, A. K. Gutakovskii and A. V. Latyshev -- The evolution of low defect density structures in silicon-on-sapphire thin films during post-ion implantation heat treatments / W. R. McKenzie, H. Domyo, T. Ho and P. R. Munroe -- HREM study of an epitaxial growth defect / A. Renard and B. Domenges -- Resonant Raman microscopy of stress in silicon-based microelectronics / E. Bonera and M. Fanciulli -- TEM study of silicon implanted with fluorine and boron applied to piezoresistor manufacturing / M. Wzorek, J. Katcki, J. Ratajczak, B. Jaroszewicz, K. Domanski and P. Grabiec -- Silicides for advanced CMOS devices / A. Lauwers, J. A. Kittl, M. J. H. van Dal, O. Chamirian, M. A. Pawlak, C. Torregiani, J. Liu, A. Benedetti, O. Richard, H. Bender, J. G. M. van Berkum, M. Kaiser, A. Veloso, K. G. Anil, M. de Potter and K. Maex -- Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN / B. Van Daele, G. Van Tendeloo, W. Ruythooren, J. Derluyn, M. R. Leys and M. Germain -- Dynamics of Au adatoms on electron-irradiated rough Si surfaces / K. Torigoe, Y. Ohno, T. Ichihashi and S. Takeda -- Corrosion of FIB-milled Cu during air exposure / H. Bender, O. Richard, P. Van Marcke and C. Drijbooms -- FIB applications for semiconductor device failure analysis / D. M. Donnet and H. Roberts -- A method for 3D failure analysis using a dedicated FIB-STEM system / T. Kamino, T. Yaguchi, M. Konno, T. Hashimoto, T. Ohnishi and K. Umemura -- Failure analysis studies in pseudomorphic SiGe channel p-MOSFET devices / A. C. K. Chang, I. M. Ross, D. J. Norris, A. G. Cullis, Y. T. Tang, C. Cerrina and A. G. R. Evans -- TEM specimen preparation technique for III-V semiconductor devices by using a novel FIB-Ar ion milling method / K. Tanabe, T. Matsuda, H. Sasaki and F. Iwase -- Focused ion beam micromilling of GaN photonic devices with gas enhanced etching techniques / W. C. Hung, T. Wang, Hung-Cheng Lin, Guan-Ting Chen, Jen-Inn Chyi and A. G. Cullis -- An organic two dimensional photonic crystal microcavity processed by focused ion beam milling / W. C. Hung, A. M. Adawi, R. Dean, A. Cadby, L. G. Connolly, A. Tahraoui, D. G. Lidzey and A. G. Cullis -- Failure analysis of degraded (In,Ga)P/GaAs heterojunction bipolar transistors by TEM / H. Kirmse, W. Neumann, U. Zeimer, R. Pazirandeh and W. Oesterle -- Strain measurements of ULSI devices using LACBED with TSUPREM modeled displacements / A. Kenda, H. Cerva, P. Pongratz, M. Hierlemann and R. Liebmann -- Electron holography for visualisation of different doped areas in silicon-germanium heterojunction bipolar transistors / U. Muehle, A. Lenk, A. T. Tilke, C. Wagner, C. Dahl and H. Lichte -- Ar sputter shadow method (ASSM) - a novel way to overcome the charging effect during AES bond pad analysis / H.-M. Lo, J.-S. Luo and J. D. Russell --
• Challenges and opportunities of angstrom-level analysis / P. E. Batson -- Sub-angstrom and 3-dimensional STEM for semiconductor research / A. R. Lupini, M. F. Chisholm, M. Varela, K. Van Benthem, A. Y. Borisevich, Y. Peng, W. H. Sides, J. T. Luck and S. J. Pennycook -- Cathodoluminescence studies of AlGaAs/GaAs core-shell nanowires / A. Gustafsson, N. Skold, W. Seifert and L. Samuelson -- Carrier diffusion lengths of (In,Ga)As, GaAs and (In,Ga)(As,N) quantum wells studied by spatially resolved cathodoluminescence / U. Jahn, T. Flissikowski, H. T. Grahn, R. Hey, E. Wiebicke, A. K. Bluhm, J. Miguel-Sanchez and A. Guzman -- An analysis of the alpha parameter used for extracting surface recombination velocity in EBIC measurements / V. K. S. Ong and O. Kurniawan -- The effects of boundary conditions on dopant region imaging in scanning electron microscopy / M. Ferroni, P. G. Merli and V. Morandi -- A cross-sectional scanning tunneling microscopy study of GaSb/GaAs nanostructures / R. Timm, A. Lenz, J. Grabowski, H. Eisele and M. Dahne -- Atomistic structure of spontaneously-ordered GaInP alloy revealed by cross-sectional scanning tunneling microscopy and polarized cathodoluminescence spectroscopy / Y. Ohno -- Carrier distribution in quantum nanostructures studied by scanning capacitance microscopy / F. Giannazzo, V. Raineri, S. Mirabella, G. Impellizzeri, F. Priolo, M. Fedele and R. Mucciato -- Mapping of the effective electron mass in III-V semiconductors / M. H. Gass, A. M. Sanchez, A. J. Papworth, T. J. Bullough, R. Beanland and P. R. Chalker -- Reconstruction of images of surface height in scanning electron microscopy / C. G. H. Walker, M. M. El Gomati and V. Romanovsky -- Low energy scanning analytical microscopy (LeSAM) for Auger and low voltage SEM imaging of semiconductors / V. Romanovsky, M. El-Gomati, T. Wells and J. Day -- The electric field and dopant distribution in p-i-n structures observed by ionisation potential (dopant contrast) microscopy in the HRSEM / E. Grunbaum, Z. Barkay, Y. Shapira, K. Barnham, D. B. Bushnell, N. J. Ekins-Daukes, M. Mazzer and P. R. Wilshaw -- Localized energy levels associated with dislocations in ZnSe revealed by polarized CL spectroscopy under light illumination / Y. Ohno -- Electron microscopy characterisation of ZnS:Cu:Cl phosphors / A. Laszcz, J. Katcki, J. Ratajczak, M. Pluska and M. Ciez -- Resistive contrast in R-EBIC from thin films / K. Durose and H. Tatsuoka -- A diode model for SEM-REBIC contrast in ZnO varistors / A. G. Wojcik and L. E. Wojcik -- The effect of barrier height variations in alloyed Al-Si Schottky barrier diodes on secondary electron contrast of doped semiconductors / F. Zaggout and M. El-Gomati.

ISBN

354031914X

LCCN

9783540319146

OCLC

• ocm68620326
• SCSB-5260942

Owning Institutions

Columbia University Libraries