Research Catalog
Process and device simulation for MOS-VLSI circuits /
- Title
- Process and device simulation for MOS-VLSI circuits / edited by Paolo Antognetti ... [et al.].
- Author
- NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits (1982 : Urbino, Italy)
- Publication
- Boston : Nijhoff ; Hingham, MA : Distributors for the U.S. and Canada, Kluwer Boston, 1983.
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| Status | Format | Access | Call Number | Item Location |
|---|---|---|---|---|
Not available - Please for assistance. | Text | Use in library | TK7874.N343 1982 | Off-site |
Details
- Additional Authors
- Antognetti, Paolo.
- Description
- xii, 619 p. : ill.; 25 cm.
- Series Statement
- NATO ASI series. no. 62
- Subjects
- Note
- "Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, SOGESTA, Urbino, Italy, July 12-23, 1982"--T.p. verso.
- "Published in cooperation with NATO Scientific Affairs Division."
- Bibliography (note)
- Includes bibliographical references.
- ISBN
- 902472824X (Netherlands)
- LCCN
- 83004018
- Owning Institutions
- Princeton University Library