Research Catalog

Title

Amorphous silicon technology--1995 : symposium held April 18-21, 1995, San Francisco, California, U.S.A. / editors, Michael Hack [and others].

Publication

Pittsburgh, Pa. : Materials Research Society, ©1995.

Items in the Library & Off-site

Details

Additional Authors

• Hack, Michael.
• Materials Research Society.

Description

xvii, 897 pages : illustrations; 24 cm

Series Statement

Materials Research Society symposia proceedings ; v. 377

Uniform Title

Materials Research Society symposia proceedings ; v. 377.

Subject

• Amorphous semiconductors > Congresses
• Silicon > Congresses
• Amorphous semiconductors
• Silicon
• Amorpher Zustand
• Silicium
• Technologie
• Kongreß

Genre/Form

• Conference papers and proceedings.
• San Francisco (Calif., 1995)

Note

• "...papers presented at the symposium on Amorphous Silicon Technology which was held at the 1995 MRS Spring Meeting in San Francisco, California"--Preface.

Bibliography (note)

• Includes bibliographical references and indexes.

Contents

• Materials Research Society Symposium Proceedings -- The Influence of Frequency and Pressure on the Material Quality of PECVD a-Si:H / W. G. J. H. M. van Sark, J. Bezemer, E. M. B. Heller, M. Kars and W. F. van der Weg -- Effect of Plasma Damage on Interface State Density Between a-Si:H and Insulating Films / I. Umezu, T. Kuwamura and K. Maeda -- Characterization of Compositional Gradients in Amorphous Semiconductor Thin Films by Real Time Spectroscopic Ellipsometry / S. Kim, Y. Lu and R. W. Collins -- Formation of a-Si:H Film by p-CVD Method with SiH[subscript 4]-He Mixture and its Opto-electronic Properties / Y. Nakamura, T. Yamaguchi and A. Okagawa -- Power Feeding in Large Area PECVD of Amorphous Silicon / J. Kuske, U. Stephan, O. Steinke and S. Rohlecke -- An Expanding Thermal Plasma for Deposition of a-Si:H / R. J. Severens, G. J. H. Brussaard, H. J. M. Verhoeven, M. C. M. van de Sanden and D. C. Schram -- Origin and Incorporation Mechanism for Oxygen Contaminants In a-Si:H and [mu]c-Si:H Films Prepared by the Very High Frequency (70 MHz) Glow Discharge Technique / U. Kroll, J. Meier, H. Keppner, S. D. Littlewood, I. E. Kelly, P. Giannoules and A. Shah -- Fabrication of Boron Compensated Hydrogenated Amorphous Silicon Films with Significantly Improved Stability Using Plasma Enhanced Chemical Vapor Deposition Technique / M. K. Bhan -- Fabrication of Nanocrystalline Si by SiH[subscript 4] Plasma Cell / M. Otobe, T. Kanai and S. Oda
• Amorphous-to-Microcrystalline Silicon Transition in Hot-Wire Chemical Vapor Deposition / P. Brogueira, V. Chu and J. P. Conde -- Deposition of Polysilicon Films by Hot-Wire CVD at Low Temperatures for Photovoltaic Applications / J. Puigdollers, J. Bertomeu, J. Cifre, J. Andreu and J. C. Delgado -- Low Temperature Deposition of Polycrystalline Silicon Thin Films by Hot-Wire CVD / S. Yu, S. Deshpande, E. Gulari and J. Kanicki -- Fabrication of Undoped and N+ Microcrystalline Si Films Using SiH[subscript 2]Cl[subscript 2] / J. S. Byun, H. B. Jeon, J. M. Jun, J. H. Yoo, K. H. Lee, M. Park and J. Jang -- New Si CVD Precursors: Preparation and Pre-screening / D. Gaines, M. Hop, T. Kuech, J. Redwing, D. Saulys and A. Thon -- Deuterium Incorporation into Glow-Discharge Deposited Deuterated-Hydrogenated Amorphous Silicon / L. S. Sidhu, F. Gaspari, S. K. O'Leary and S. Zukotynski -- Deposition of Amorphous Hydrogenated Silicon Films by VUV Laser CVD: Influence of Substrate Temperature / H. Karstens and P. Hess -- Enhancement of Crystallinity with Fluorinated Amorphous Silicon (a-Si:H;F) Film by XeCl Excimer Laser Annealing / H. S. Choi, K. H. Jang, K. B. Kim and M. K. Han -- Deposition of Si Thin Films by Reactive CVD / J.-I. Hanna -- Plasma Deposition and Characterization of Stable o-Si:H(Cl) from a Silane-Dichlorosilane Mixture / I. S. Osborne, N. Hata and A. Matsuda -- Fast Deposition of Polycrystalline Silicon Films by Hot-Wire CVD / A. R. Middya, A. Lloret, J. Perrin, J. Huc, J. L. Moncel, J. Y. Parey and G. Rose
• Effects of SiH[subscript 2]Cl[subscript 2] Addition on the Growth Mechanism of Si Films Prepared by Photochemical Vapor Deposition / T. Oshima, K. Yamaguchi, K. Abe, A. Yamada, M. Konagai and K. Takahashi -- Surface Reaction Mechanism During Deposition of a-Si:H by PECVD / K. Maeda, A. Kuroe and I. Umezu -- Microcrystalline and Mixed Phase Si:H -- Preparation, Potential and Properties for Devices / V. L. Dalal, S. Kaushal, E. X. Ping, J. Xu, R. Knox and K. Han -- Growth and Nucleation of Hydrogenated Amorphous Silicon on Silicon (100) Surfaces / D. M. Tanenbaum, A. Laracuente and A. C. Gallagher -- Grain Formation in Polycrystalline Silicon Films Deposition on SiO[subscript 2] at Very Low Temperatures / K. C. Wang, R.-Y. Wang, T.-R. Yew, J. J. Loferski and H.-L. Hwang -- Is Thermalization Due to Electronic Self-Trapping? / M. Kemp -- Below Gap Excitation of Photoluminescence in a-Si:H / X. Yin, M. E. Raikh and P. C. Taylor -- Simultaneous Relaxation of Network and Defects in Silicon-Implanted a-Si:H / J. Nakata, S. Sherman, S. Wagner, P. A. Stolk and J. M. Poate -- Correlation of Film Quality and Hydrogen NMR Resonance Shifts in a-Si:D,H; a-Ge:D,H; and a-SiGe:D,H / R. E. Norberg, Y. W. Kim, P. H. Chan, J. R. Bodart, M. J. Kernan, D. J. Leopold, P. A. Fedders, W. A. Turner and W. Paul -- Local and Long-Range Hydrogen Motion in a-Si:H / P. Hari, P. C. Taylor and R. A. Street -- Relation Between Defect Density and Local Structures of a-Si:H / M. Azuma, K. Nakamura, T. Yokoi, K. Yoshino and I. Shimizu
• Study of the Microstructure of Amorphous Germanium Alloys Using AFM and SAXS / P. R. Moffitt, H. A. Naseem, S. S. Ang and W. D. Brown -- Nonlinear Optical Defect Absorption in Hydrogenated Amorphous Silicon / W. Rieger, M. Lanz, C. F. O. Graeff, C. E. Nebel and M. Stutzmann -- Photoelectric-Yield Studies of c-Si/a-Si:H Interfaces / M. Sebastiani, L. Di Gaspare, C. Bittencourt and F. Evangelisti -- Characterization of Localized Density of States in Intrinsic a-Si and poly-Si Films by Transient Voltage Spectroscopy / G. Kawachi, M. Ishii, T. Tanaka and N. Konishi -- The Role of Deep Defect Relaxation Dynamics in Optical Processes in Hydrogenated Amorphous Silicon / F. Zhong and J. D. Cohen -- Dangling-Bond Relaxation and Metastability in p-Type Hydrogenated Amorphous Silicon / R. S. Crandall, M. W. Carlen, K. Lips and Y. Xu -- Effect of Contacts on Capacitance Transient Measurements in n-Type Hydrogenated Amorphous Silicon / W. B. Jackson, N. M. Johnson and J. Walker -- Origin of Photodegradation in a-Si:H -- Bond Breaking or Charge Trapping? / T. Shimizu, M. Kumeda, Q. Zhang, J. Zhang and T. Ohtsuka -- Light-Induced Degradation of a-Si:H -- A Comparison of Short-Laser-Pulse and Steady Light Degradation / P. Tzanetakis, N. Kopidakis, M. Androulidaki, C. Kalpouzos, P. Stradins and H. Fritzsche -- Nanostructure of a-Si:H and Related Materials by Small-Angle X-ray Scattering / D. L. Williamson
• Investigation of the Surface Morphology of a-Si:H by Atomic Force Microscopy and In-Situ Ellipsometry / H. N. Wanka, A. Hierzenberger and M. B. Schubert -- Defects, Energies, Hydrogen, and Structural Properties of Molecular-Dynamics Modeled a-Si:H / P. A. Fedders -- Vacancy-Interstitial Pair-Formation Mechanism of X-ray-Irradiation-Induced Crystallization in Amorphous Silicon Studied by ab initio Molecular Dynamics Simulation / T. Matsumura, H. Katayama Yoshida and N. Orita -- Carrier Recombination in a-Si:H p-i-n Devices Studied by PL and EL Spectroscopies / C. N. Yeh, D. X. Han, K. D. Wang and L. E. McNeil -- Examination of the Defect Pool Model by an Improved Analysis of the Constant Photocurrent Method / H. Stiebig and F. Siebke -- Monte Carlo Simulations of Defect Relaxation in Amorphous Silicon / T. Unold and H. M. Branz -- Effect of Light Soaking on Hot Wire Deposited a-Si:H Films / D. Kwon, J. D. Cohen, B. P. Nelson and E. Iwaniczko -- Light-Induced Metastable Change in a-SiS[subscript x]:H / S. L. Wang and P. C. Taylor -- Bonding of Hydrogen and Deuterium in Silicon Nitride Films Prepared by Remote Plasma Enhanced Chemical Vapor Deposition / G. Stevens, P. Santos-Filho, S. Habermehl and G. Lucovsky -- Thermodynamics and Kinetics of Hydrogen Evolution in Hydrogenated Amorphous Silicon Films / N. Sridhar, D. D. L. Chung, W. A. Anderson and J. Coleman -- Transient Mean-Field Reaction-Diffusion Model Applied to Hydrogen Evolution from Hydrogenated Amorphous Silicon / A. J. Franz, M. Mavrikakis, J. W. Schwank and J. L. Gland
• Evidence for Exchange Between Free and Deep Hydrogen (Deuterium) During Diffusion / H. M. Branz, S. Asher, Y. Xu and M. Kemp -- Hydrogen Bond Configuration in PECVD Silicon Nitride Films During RTA / S. S. He and V. L. Shannon -- Is Thermal and Light-Induced Annealing of Metastable Defects in a-Si:H Driven by Electrons? / H. Gleskova and S. Wagner -- Equilibration in Amorphous Silicon Nitride Alloys / B. Dunnett, C. H. Cooper, D. T. Murley, R. A. G. Gibson, D. I. Jones, M. J. Powell, S. C. Deane and I. D. French -- Stress and the Goal of Improved Amorphous Silicon Stability / C. M. Fortmann -- Thermal Equilibrium Processes in a-Si:H Solar Cells / J.-H. Lee, J. S. Koh and J. Jang -- Recovery Process of Light-Induced Spins in Hydrogenated Amorphous Silicon-Nitrogen Alloy Films / J. Zhang, Q. Zhang, M. Kumeda and T. Shimizu -- Pulsed-Light-Induced Metastable Defect Creation in Hydrogenated Amorphous Silicon / J.-H. Yoon and H. L. Kim -- Carrier-Induced Changes in the Gap States of Undoped a-Si:H Films / Y. E. Chen, J. W. Tsai and H. C. Cheng -- Alternative Mechanism for Defect Generation in a-Si:H / D. Redfield -- Silicon-Hydrogen Bonding and Hydrogen Diffusion in Amorphous Silicon / C. G. van de Walle and R. A. Street -- Light-Induced Changes Among Fast-Relaxing Hydrogens in Plasma-Deposited Hydrogenated Amorphous Silicon / M. J. Kernan, R. L. Corey, P. A. Fedders, D. J. Leopold, R. E. Norberg, W. A. Turner and W. Paul -- Telegraph Noise as a Probe of Microscopic Hydrogen Motion in Amorphous Silicon / L. M. Lust and J. Kakalios
• Metastable Defect Formation by Hydrogen Relocation and Rebonding / Q. Li and R. Biswas -- Measurement of Two Deep H Bonding Levels in Device Quality Glow Discharge a-Si:H / A. H. Mahan, E. J. Johnson, R. S. Crandall and H. M. Branz -- Solubility of Hydrogen in Amorphous Silicon / J. D. Ouwens and R. E. I. Schropp -- Diffusion, Drift, and Recombination of Holes in a-Si:H / R. Schwarz, F. Wang, S. Grebner, Q. Gu and E. A. Schiff -- Electron Drift Mobility in a-Si:H Prepared by Hot-Wire Deposition / Q. Gu, E. A. Schiff, R. S. Crandall, E. Iwaniczko and B. Nelson -- Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique / G. J. Adriaenssens, B. Yan and A. Eliat -- High Electric Field Forming of a-Si:H p-i-n Diodes / A. Ilie, B. Equer and T. Pochet -- Spin-Dependent Recombination Effects in a-Si:H pin Solar Cell Devices: A New Characterization Technique / K. Lips -- The Limitations of the Constant Photocurrent Method for Determining Subgap Absorption / P. Stradins, H. Fritzsche and M. Tran -- [mu][tau] Products of [actual symbol not reproducible] Deduced from Reverse-Bias Dependence of Carrier-Collection Measurements in High Drift Mobility a-Si:H / G. Ganguly and A. Matsuda -- Correlation Between Phototransport and Network Order in a-Si:H / G. Morell, R. S. Katiyar, S. Z. Weisz, H. Jia, J. Shinan and I. Balberg -- Transient Infrared Stimulated Photoconductivity in a-Si:H at Low Temperatures / S. Heck, P. Stradins and H. Fritzsche
• Transient Photocurrent Measurements on Current-Stressed a-Si:H Schottky Diodes / A. A. Buykx, M. Zeman, A. J. G. Spiekerman and J. W. Metselaar -- Numerical Modelling of Time-of-Flight in SCLC-Mode / R. Bruggemann and G. H. Bauer -- Analytical Approach for Transient Photoconductivity in Undoped a-Si:H / M. Goerlitzer, P. Pipoz, H. Beck, N. Wyrsch and A. V. Shah -- ac Theory of Constant Photocurrent Measurement / G. Conte, A. Eray, G. Nobile and F. Palma -- Improved Ambipolar Diffusion Length in a-Si[subscript 1-x] Ge:H Alloys for Multi-junction Solar Cells / J. Folsch, F. Finger, T. Kulessa, F. Siebke, W. Beyer and H. Wagner -- Utilization of Amorphous Silicon Carbide (a-Si:C:H) as a Resistive Layer in Gas Microstrip Detectors / W. S. Hong, H. S. Cho, V. Perez-Mendez and W. G. Gong -- Influence of Precursor Chemistry on Synthesis of Silicon-Carbon-Germanium Alloys / M. Todd, J. Kouvetakis, P. Matsunaga, D. Chadrasekhar and D. Smith -- Properties and Crystallization of Amorphous Si[subscript 1-x]P[subscript x] Alloy Thin Films / J. R. A. Carlsson, X.-H. Li, L. D. Madsen and H. T. G. Hentzell -- Dopant Activation in Boron-Doped a-Si:H and a-SiC:H by Thermal Annealing and Light-Soaking / M. Isomura, Y. Hishikawa and S. Tsuda -- Defect Properties of Cathode Deposited Glow Discharge Amorphous Silicon Germanium Alloys / F. Zhong, C.-C. Chen, J. D. Cohen, P. Wickboldt and W. Paul
• Defects and Microstructure in Optimized a-Si:Ge:H -- New Results from Electron Spin Resonance Experiments / C. Malten, F. Finger, J. Folsch, T. Kulessa, H. Wagner, S. Kay, A. R. Middya and S. Hazra -- Optoelectronic Properties of High-Gap Amorphous Silicon-Carbon Alloys / V. Chu, J. P. Conde, P. Brogueira, P. Micaelo, J. P. Jarego, M. F. da Silva and J. C. Soares -- Investigation of Tail and Defect States in a-Si[subscript 0.6]Ge[subscript 0.4]:H Alloys: Alloys by PDS and ESR -- Implications for the Interaction of Weak and Dangling Bonds / T. P. Drusedau, A. N. Panckow and B. Schroder -- Thermopower and 1/f Noise Measurements in Amorphous Silicon-Carbon Alloys / H. M. Dyalsingh, G. M. Khera and J. Kakalios -- Phototransport Properties of o-SiC:H Alloys / G. Nery, A. Ramirez, O. Resto, S. Z. Weisz, Y. Lubianiker and I. Balberg -- Wide Gap a-SiC:H Alloys for Novel Photovoltaic-Electrochromic Window Coatings / J. N. Bullock, Y. Xu, D. Benson and H. M. Branz -- Structural Defects in Thin Film Amorphous Silicon Films Deposited on Textured TCO Material / D. Knoesen, R. E. I. Schropp and W. F. van der Weg -- Real Time Monitoring of Amorphous Silicon Solar Cell Fabrication / Y. Lu, S. Kim, J. S. Burnham, I.-S. Chen, Y. Lee, Y. E. Strausser, C. R. Wronski and R. W. Collins -- Flexible a-Si Solar Cells with Plastic Film Substrate / S. Fujikake, K. Tabuchi, T. Yoshida, Y. Ichikawa and H. Sakai
• Microwave Glow-Discharge Deposition of Amorphous Silicon Based Alloys of High Deposition Rates for Solar Cell Application / S. Guha, X. Xu, J. Yang and A. Banerjee -- Effect of White and Red Light Illumination on the Degradation of a-Si:H Solar Cells / T. Jamali-beh, I.-S. Chen, H. Liu, Y. Lee and C. R. Wronski -- Relation of the Electroluminescence Measurements to a-Si:H Solar Cell Parameters / K. Wang and D. Han -- Application of the Defect Pool Model in Modelling of a-Si:H Solar Cells / M. Zeman, G. Tao, M. Trijssenaar, J. Willemen, W. Metselaar and R. Schropp -- VHF-Deposited a-SiC:H Alloys for High-Bandgap Solar Cells: Combining High V[subscript oc] and Reasonable Stability / R. Platz, D. Fischer and A. Shah -- Band Discontinuity Effect on a-Si:H and a-SiGe:H Solar Cells / X. Xu, A. Banerjee, J. Yang, S. Guha, K. Vasanth and S. Wagner -- Spectral Response of a-Si:H p-i-n Solar Cells Degraded by Blue and Red Light / A. Mittiga, L. Mariucci, T. Fasolino, A. Romano, P. Fiorini and P. Bonito -- Design and Growth of Band-Gap Graded a-SiGe:H Solar Cells / K. Vasanth, A. Payne, B. Crone, S. Sherman, M. Jakubowski and S. Wagner -- Time Dependence of Spatial Defect Profiles in a-Si:H Solar Cells with Light-Soaking / D. Caputo, M. Maggi, G. Masini, F. Palma, K. Vasanth and S. Wagner -- Analysis of Fill Factor Losses in a-Si and a-SiGe Alloy Solar Cells Using a New Technique / A. Banerjee, X. Xu, J. Yang and S. Guha
• The Effect of ZnO Sputtering Deposition Parameters on the Performances of Back Reflector Enhanced Amorphous Silicon Solar Cells / E. Terzini, A. Rubino, R. De Rosa and M. L. Addonizio -- Analysis of Non-Uniform Creation of Light-Induced Defects in Schottky Barrier Solar Cell Structures / H. Liu, C. T. Malone, C. M. Fortmann and C. R. Wronski -- Organic Thin-Film-Transistors with High On/Off Ratios / L. Torsi, A. Dodabalapur, H. E. Katz, A. J. Lovinger and R. Ruel -- Thin Film Transistors with Layered a-Si:H Structure / Y. Kuo -- Dielectric Effects in Laser-Crystallised Polycrystalline Silicon Thin Film Transistors / G. H. Masterton, R. A. G. Gibson and M. Hack -- Performance of Photo-Transistors with Thin (50 nm) a-Si:H Layers / S. M. GadelRab and S. G. Chamberlain -- Electrophotographic Patterning of a-Si:H / H. Gleskova, S. Wagner and D. S. Shen -- Temperature and Frequency Dependent Characteristics of Amorphous Silicon Thin Film Transistors / H. C. Slade, M. S. Shur and M. Hack -- A Semi-Insulating Layer for Novel High Voltage Polysilicon Thin Film Transistors / F. J. Clough, Y. Chen, A. O. Brown, E. M. Sankara Narayanan and W. I. Milne -- A Totally Wet Etch Fabrication Technology for Amorphous Silicon Thin Film Transistors / A. M. Miri and S. G. Chamberlain -- Very Low Off Current Behavior in High Performance a-Si:H TFT / J.-K. Yoon, W.-S. Choi, Y.-H. Jang and S.-M. Seo -- TFT Performance -- Material Quality Correlation for a-Si:H Deposited at High Rates / S. Sherman, P.-Y. Lu, R. A. Gottscho and S. Wagner
• Two Dimensional Amorphous Silicon Image Sensor Arrays / R. A. Street, X. D. Wu, R. Weisfield, S. Ready, M. Nguyen and P. Nylen -- Utilization of Photoconductive Gain in a-Si:H Devices for Radiation Detection / H. K. Lee, J. S. Drewery, W. S. Hong, T. Jing, S. N. Kaplan and V. Perez-Mendez -- Amorphous Silicon Layers Suitable for the Realization of Radiation Detectors / W. S. Hong, V. Petrova-Koch, J. Drewery, T. Jing, H. Lee and V. Perez-Mendez -- New Bias-Controlled Three-Color Detectors Using Stacked a-SiC:H/a-Si:H Heterostructures / M. Topic, F. Smole, A. Groznik and J. Furlan -- Adjustable Threshold a-Si/SiC:H Color Detectors / G. de Cesare, F. Irrera, F. Lemmi, F. Palma and M. Tucci -- Detection Limit of Large Area 1D Thin Film Position Sensitive Detectors Based in a-Si:H p.i.n. Diodes / R. Martins, G. Lavareda, F. Soares and E. Fortunato -- A New Linear Array Thin Film Position Sensitive Detector (LTFPSD) for 3D Measurements / E. Fortunato, F. Soares, G. Lavareda and R. Martins -- c-Si(n+)/a-Si Alloy/Pd Schottky Barrier Device for the Effective Evaluation of Photovoltaic Performance of a-Si Alloy Materials / X. Deng, S. J. Jones, J. Evans and M. Izu -- Brightness Degradation Controlled by Current Induced Metastable Defect Creation in a-SiC:H Based Light Emitting Diodes / R. Rizzoli, C. Summonte, R. Galloni, M. Ruth, A. Desalvo, F. Zignani, P. Rava, F. Demichelis, C. F. Pirri, E. Tresso, G. Crovini, F. Giorgis and A. Madan -- Amorphous Silicon Three Color Detector / H. Stiebig, J. Giehl, D. Knipp, P. Rieve and M. Bohm
• Realization of an Amorphous n-i-p-i-n Three Color Sensor / K. Eberhardt, T. Neidlinger and M. Schubert -- Hyperacuity Image Sensors / D. K. Biegelsen, W. B. Jackson, R. Lujan, D. Jared and R. L. Weisfield -- Hydrogenated Amorphous Silicon Speed Sensor Based on the Flying Spot Technique / M. Vieira, A. Fantoni, A. Macarico, F. Soares, G. Evans and R. Martins -- Trends of Research in Active Addressing of LCDs / E. Lueder -- Fabrication of a Single Crystal Silicon Substrate for AM-LCD Using Vertical Etching of (110) Silicon / J.-B. Yoon, H.-J. Lee, C.-H. Han and C.-K. Kim -- Studies of a Polymer Dispersed Ferroelectric Liquid Crystal / C. A. Guymon, E. N. Hoggan and C. N. Bowman -- Properties of Glass Substrates for Poly-Si AMLCD Technology / D. M. Moffatt -- Excimer Laser Annealed Poly-Si TFT Technologies / Fujio Okumura, Kenji Sera, Hiroshi Tanabe, Katsuhisa Yuda and Hiroshi Okumura.

ISBN

• 1558992804
• 9781558992801

OCLC

• ocm33959408
• 33959408
• SCSB-9327128

Owning Institutions

Princeton University Library