Research Catalog
Process and device simulation for MOS-VLSI circuits
- Title
- Process and device simulation for MOS-VLSI circuits / edited by Paolo Antognetti [and others].
- Author
- NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits (1982 : Urbino, Italy)
- Publication
- Boston : Nijhoff ; Hingham, MA : Distributors for the U.S. and Canada, Kluwer Boston, 1983.
Items in the Library & Off-site
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1 Item
| Status | Format | Access | Call Number | Item Location |
|---|---|---|---|---|
| Text | Use in library | TK7874 .N343 1982 | Off-site |
Details
- Additional Authors
- Antognetti, Paolo.
- Description
- xii, 619 pages : illustrations; 25 cm.
- Series Statement
- NATO ASI series. Series E, Applied sciences ; no. 62
- Uniform Title
- NATO ASI series. Series E, Applied sciences ; no. 62.
- Subject
- Integrated circuits > Very large scale integration > Simulation methods > Congresses
- Metal oxide semiconductors > Simulation methods > Congresses
- Integrated circuits > Very large scale integration > Simulation methods
- Metal oxide semiconductors > Simulation methods
- Circuits intégrés > Simulation par ordinateur
- Genre/Form
- Conference papers and proceedings.
- Note
- "Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, SOGESTA, Urbino, Italy, July 12-23, 1982"--T.p. verso.
- "Published in cooperation with NATO Scientific Affairs Division."
- Bibliography (note)
- Includes bibliographical references.
- ISBN
- 902472824X
- 9789024728244
- 9024726891
- 9789024726899
- LCCN
- 83004018
- OCLC
- ocm09325055
- 9325055
- SCSB-98955
- Owning Institutions
- Princeton University Library