Research Catalog

Title

High dielectric constant materials : VLSI MOSFET applications / H.R. Huff, D.C. Gilmer (eds.).

Publication

Berlin ; New York : Springer, 2005.

Items in the Library & Off-site

Details

Additional Authors

• Huff, Howard R.
• Gilmer, D. C. (David C.)

Description

xxiv, 710 pages : illustrations; 25 cm

Series Statement

Springer series in advanced microelectronics, 1437-0387 ; 16

Uniform Title

Springer series in advanced microelectronics ; 16.

Alternative Title

VLSI MOSFET applications

Subject

• Integrated circuits > Very large scale integration > Materials
• Semiconductors > Materials
• Metal oxide semiconductor field-effect transistors > Materials
• Gate array circuits > Materials > Congresses
• Dielectrics
• Circuits intégrés à très grande échelle > Matériaux
• Semi-conducteurs > Matériaux
• Transistors MOSFET > Matériaux
• Circuits prédiffusés > Matériaux > Congrès
• Gate array circuits > Materials
• Dielektrische Schicht
• Gate Elektronik
• MOS-FET
• Siliciumdioxid
• Siliciumoxinitride
• VLSI

Genre/Form

• Conference papers and proceedings.
• Aufsatzsammlung.

Bibliography (note)

• Includes bibliographical references and index.

Contents

1. The economic implications of Moore's law -- Part I. Classical regime for SiO₂ -- 2. Brief notes on the history of gate dielectrics in MOS devices -- 3. SiO₂ based MOSFETS: Film growth and Si-SiO₂ interface properties -- 4. Oxide reliability issues -- Part II. Transition to silicon oxynitrides -- 5. Gate dielectric scaling to 2.0-1.0 nm: SiO₂ and silicon oxynitride -- 6. Optimal scaling methodologies and transistor performance -- 7. Silicon oxynitride gate dielectric for reducing gate leakage and boron penetration prior to high-k gate dielectric implementation -- Part III. Transition to high-k gate dielectrics -- 8. Alternative dielectrics for silicon-based transistors: Selection via multiple criteria -- 9. Materials issues for high-k gate dielectric selection and integration -- 10. Designing interface composition and structure in high dielectric constant gate stacks -- 11. Electronic structure of alternative high-k dielectrics -- 12. Physicochemical properties of selected 4d, 5d, and rare earth metals in silicon -- 13. High-k gate dielectric deposition technologies -- 14. Issues in metal gate electrode selection for bulk CMOS devices -- 15. CMOS IC fabrication issues for high-k gate dielectric and alternate electrode materials -- 16. Characterization and metrology of medium dielectric constant gate dielectric films -- 17. Electrical measurement issues for alternative gate stack systems -- 18. High-k gate dielectric materials integrated circuit device design issues -- Part IV. Future directions for ultimate scaling technology generations -- 19. High-k crystalline gate dielectrics: A research perspective -- 20. High-k crystalline gate dielectrics: An IC manufacturer's perspective -- 21. Advanced MOS-devices.

ISBN

• 3540210814
• 9783540210818

LCCN

• 2004105869
• 9783540210818

OCLC

• ocm56755279
• 56755279
• SCSB-9333284

Owning Institutions

Princeton University Library