Research Catalog

Title

Mechanisms of reactions of organometallic compounds with surfaces / edited by D.J. Cole-Hamilton and J.O. Williams.

Author

NATO Advanced Research Workshop on the Mechanisms of Reactions of Organometallic Compounds with Surfaces (1988 : St. Andrews, Scotland)

Publication

New York : Plenum Press, ©1989.

Items in the Library & Off-site

Details

Additional Authors

• Cole-Hamilton, D. J. (David John)
• Williams, J. O. (John Owen)
• North Atlantic Treaty Organization. Scientific Affairs Division.

Description

xiii, 299 pages : illustrations; 26 cm.

Series Statement

NATO ASI series. Series B, Physics ; v. 198

Uniform Title

NATO ASI series. Series B, Physics ; v. 198.

Subject

• Surfaces (Physics) > Congresses
• Organometallic compounds > Congresses
• Surface chemistry > Congresses
• Semiconductors > Surfaces > Congresses
• Photochemistry > Congresses
• Organometallic compounds
• Photochemistry
• Semiconductors > Surfaces
• Surface chemistry
• Surfaces (Physics)

Genre/Form

Conference papers and proceedings.

Note

• "Proceedings of a NATO Advanced Research Workshop on the Mechanisms of Reactions of Organometallic Compounds with Surfaces, held June 22-24, 1988 in St. Andrews, Fife, Scotland, United Kingdom"--T.p. verso.
• "Published in cooperation with NATO Scientific Affairs Division."

Bibliography (note)

• Includes bibliographies and index.

Contents

Metallisation and Related Reactions -- New Directions in LCVD Metallisation Introduction and Conclusion -- Photoinduced Organometallic Processes in Semiconductor Surface Technology -- U.V. Excimer Laser Induced Photochemistry of Gaseous Organometallics for Surface Modification -- Laser-Induced Photodissociation of Al2(CH3)6: Gas-phase and Adsorbed Layer Dissociation Mechanisms for Al Film Growth -- Photonucleation and Photodeposition of Al on Si from Flowing Trimethylaluminium in Hydrogen -- An in-situ Study of Chemical Vapour Deposition of Triisobutylaluminum on Si(100) -- An in-situ Study of the U.V. Photochemistry of Adsorbed TiCl4, by FTIR Spectroscopy -- Model Studies of LCVD of Transition Metals on Silicon: Surface Processes -- Excimer Laser Assisted Deposition of Cr on B Films -- Reactions of Group V Metal Hydrides with Surfaces -- Techniques for Studying Silicon Deposition -- Some Considerations of the Kinetics and Thermodynamics of CVD Processes -- The Chemistry of Silicon Deposition from Hydride Decomposition -- The Spectroscopy of Crystal Growth Surface Intermediates on Silicon -- Growth of Semi-Conductors by Gas Phase Movpe -- Growth of Semi-Conductors by Thermal MOVPE Introduction and Conclusions -- Reactions in OMVPE Growth of GaAs Determined Using labelling experiments -- Chemical Boundary Layers (MOCVD): The Return of the Stagnant Layer -- Monitoring Chemical Reactions in Metal-Organic Chemical Vapour Deposition (MOCVD) -- Surface Studies at Atmospheric Pressure and Under UHV Conditions During Growth of GaAs -- Gas Phase and Surface Effects in the Thermal Decomposition of AsH3 and PH3 Studies by CARS. -- In Situ Raman Studies of AsH3, and TMG Thermal Decomposition in GaAs MOVPE Conditions -- Surface vs Gasphase Processes in the MOCVD of GaAs. -- Multiphoton Ionisation/Mass Spectrometnc Study of OMCVD Mechanisms Under Single Gas-Surface Collision Conditions -- CVD of SiC and A1N Thin Films Using Designed Organometallic Precursors -- Anisotropic Growth of GaAs in MOVPE -- Selective and Nonplanar Metal Organic Vapour Phase Epitaxy -- Photochemical Movpe Growth of Compound Semi-Conductors -- and Conclusions -- Mechanisms of the Photochemical Growth of Cadmium Mercury Telluride -- Alternative Growth Techniques to Atmospheric Pressure Movpe -- and Conclusions -- The Role of Surface and Gas Phase Reactions in Atomic Layer Epitaxy -- Gas Source Molecular Beam Epitaxy -- Heteroepitaxy of InSb by Metal Organic Magnetron Sputtering.

ISBN

• 0306432056
• 9780306432057

LCCN

89003912

OCLC

• ocm19458784
• 19458784
• SCSB-8797231

Owning Institutions

Princeton University Library