Research Catalog

The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon

Title
The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon / W.R. Thurber ... [et al.].
Publication
Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., [1981]

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Details

Additional Authors
Thurber, W. Robert.
Description
v, 47 p.; 26 cm.
Series Statement
  • Semiconductor measurement technology
  • NBS special publication ; 400-64
Subject
  • Silicon > Defects
  • Semiconductor doping
  • Electron mobility
  • Electric resistance
Note
  • "Issued May 1981."
Bibliography (note)
  • Includes bibliographical references.
LCCN
81600052
OCLC
  • ocm07632573
  • SCSB-1510889
Owning Institutions
Princeton University Library